TSM026NA03CR RLG

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The TSM026NA03CR RLG is a single n-channel enhancement mode MOSFET which is relatively small and well suited for working in very high temperatures, up to 175C at full operation. It has a continuous drain current of 20A, a Pd of 510mW, and a typical on-state resistance of 0.018 ohms in an 8-pin mSOP (Micro Small Outline Package) package. It is designed for use in automotive and mobile communication applications, and its high power dissipation makes it suitable for power switching applications.

The MOSFET is a type of transistor consisting of a source, a drain, and a gate. It is also known as a Metal Oxide Semiconductor Field-Effect Transistor, or MOSFET, and is used to control the flow of current between the source and the drain. It is a three-terminal unipolar device, meaning that its gate terminal accepts only one type of polarity, either positive or negative. It operates on the principle of “field effect”, whereby the electric field generated by the application of a voltage to the gate region alters the conductivity of the MOSFET channel between the source and the drain.

This device is good for applications that require a low off-state “leakage” current, as it has a very low off-state current. Its low gate-drain capacitance also makes it suitable for switching applications, as it will switch on faster than a device with a higher gate-drain capacitance. The TSM026NA03CR RLG has an advanced technology package, which allows the device to withstand greater power dissipation in a very small form factor.

The TSM026NA03CR RLG can be used in a variety of applications, including DC-DC converters, motor drivers, solenoid drivers, switch matrices, motor speed and position control, and switching applications. This device is particularly useful in automotive applications, due to its ability to withstand high temperatures and dissipate large amounts of power. It also has very low gate charge and drain to source capacitance, making it suitable for applications which require fast switching speeds and low EMI (electromagnetic interference).

In summary, the TSM026NA03CR RLG is a quality single n-channel MOSFET suitable for a wide variety of applications. It has an advanced package that makes it well suited for automotive and mobile communication applications, and its low gate-drain capacitance makes it suitable for high-speed switching. It is an ideal device for a variety of applications, such as DC-DC converters, motor drivers, solenoid drivers, switch matrices, motor speed and position control, and switching applications.

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