Allicdata Part #: | TSM045NB06CRRLGTR-ND |
Manufacturer Part#: |
TSM045NB06CR RLG |
Price: | $ 0.53 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Taiwan Semiconductor Corporation |
Short Description: | MOSFET SINGLE N-CHANNEL TRENCH |
More Detail: | N-Channel 60V 16A (Ta), 104A (Tc) 3.1W (Ta), 136W ... |
DataSheet: | TSM045NB06CR RLG Datasheet/PDF |
Quantity: | 5000 |
2500 +: | $ 0.47277 |
Vgs(th) (Max) @ Id: | 4V @ 250µA |
Package / Case: | 8-PowerLDFN |
Supplier Device Package: | 8-PDFN (5x6) |
Mounting Type: | Surface Mount |
Operating Temperature: | -55°C ~ 175°C (TJ) |
Power Dissipation (Max): | 3.1W (Ta), 136W (Tc) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 6870pF @ 30V |
Vgs (Max): | ±20V |
Gate Charge (Qg) (Max) @ Vgs: | 104nC @ 10V |
Series: | -- |
Rds On (Max) @ Id, Vgs: | 5 mOhm @ 16A, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 10V |
Current - Continuous Drain (Id) @ 25°C: | 16A (Ta), 104A (Tc) |
Drain to Source Voltage (Vdss): | 60V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Active |
Packaging: | Tape & Reel (TR) |
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The TSM045NB06CR RLG is a six-pin, single-gate field effect transistor (FET) made by Toshiba. This is an N-Channel enhancement mode which utilizes a lateral-gate structure and is designed as a protection application device.
This type of FET is used as an amplifier and switch in power, RF, and small signal applications. It has a relatively low on-state resistance and is suitable for use with a wide range of systems, and is often used as a driver for small loads. The gate threshold voltage is typically low, making it suitable for use with microcontrollers.
The TSM045NB06CR RLG is a three-terminal device composed of a source, a gate, and a drain. The source, gate, and drain are all connected to electrical leads, which provide the electrical connection between the FET and the circuit board.
The TSM045NB06CR RLG works by controlling the current flow between the source and the drain with an applied voltage to the gate. The gate region is insulated from the source and drain regions by the isolation P-type region or “semiconductor-insulator interface”. The gate region is embedded within this P-type region so with application of a high enough voltage, current can be allowed to flow from the source to the drain. When the voltage is removed, the current flow from the source to the drain ceases, effectively allowing the FET to act as an on/off switch for applications.
Similar to all field effect transistors, the TSM045NB06CR RLG relies heavily on the junction capacitance for its operation. The junction capacitance is the capacitance that exists between the three terminals, the source, gate and drain, and is a function of the size of the junction. As the gate of this FET is a very small area and in close proximity to the source/drain regions, the junction capacitance is also very small and of low immunity. Therefore, this type of FET is often used in high speed, low noise applications.
The TSM045NB06CR RLG is used in multiple industries and applications such as in switching regulators and power supplies, motor control, and audio amplifiers. It can also be used as a protection device in automotive, home appliances and medical electronics, as well as in digital, analog, and RF circuits.
Overall, the TSM045NB06CR RLG is a versatile and useful single gate field effect transistor well-suited for multiple applications. Its wide array of features and low on-state resistance make it a good choice for a variety of systems, as well as easy integration with microcontrollers. Its low junction capacitance and high speed also make it well-suited for high-frequency, low noise applications. With its wide range of uses and applications, the TSM045NB06CR RLG is a great choice for any system requiring a single gate FET.
The specific data is subject to PDF, and the above content is for reference
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