Allicdata Part #: | TSM090N03ECPROGTR-ND |
Manufacturer Part#: |
TSM090N03ECP ROG |
Price: | $ 0.14 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Taiwan Semiconductor Corporation |
Short Description: | MOSFET N-CHANNEL 30V 50A TO252 |
More Detail: | N-Channel 30V 50A (Tc) 40W (Tc) Surface Mount TO-2... |
DataSheet: | TSM090N03ECP ROG Datasheet/PDF |
Quantity: | 15000 |
2500 +: | $ 0.12353 |
Vgs(th) (Max) @ Id: | 2.5V @ 250µA |
Package / Case: | TO-252-3, DPak (2 Leads + Tab), SC-63 |
Supplier Device Package: | TO-252, (D-Pak) |
Mounting Type: | Surface Mount |
Operating Temperature: | 150°C (TJ) |
Power Dissipation (Max): | 40W (Tc) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 680pF @ 25V |
Vgs (Max): | ±20V |
Gate Charge (Qg) (Max) @ Vgs: | 7.7nC @ 4.5V |
Series: | -- |
Rds On (Max) @ Id, Vgs: | 9 mOhm @ 16A, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 4.5V, 10V |
Current - Continuous Drain (Id) @ 25°C: | 50A (Tc) |
Drain to Source Voltage (Vdss): | 30V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Active |
Packaging: | Tape & Reel (TR) |
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A majority of integrated circuit and microcontroller applications involve a MOSFET device. The TMS090N03ECP is a ROG (Resistive Gate) MOSFET that provides the highest level of performance and compatibility. It is a highly efficient device that is suitable for use in many applications.
MOSFETs are three-terminal devices that use electric field to control the current flow. They consist of a semiconductor, either p-type or n-type, that is sandwiched between two metal or polysilicon layers. Each layer is connected to a control and drain terminal, respectively, and the control terminal is connected to the gate. Depending on the voltage difference between the source and the gate, current flows between the source and the drain.
The TMS090N03ECP uses the ROG structure, which consists of a reverse-biased MOS capacitor, a Field Effect Transistor (FET), and a resister in series. This device consists of three terminals: the source, drain and gate. When the gate-to-drain voltage is greater than or equal to the threshold voltage, which is usually between 5 and 8V, the MOSFET is turned off. Otherwise, the MOSFET is turned on and current flows.
The TMS090N03ECP is especially suitable for applications in high speed switching, such as PCs, high-speed networking equipment, and high-frequency RF systems. The low RDS and low noise makes it suitable for use in server processors and microcontrollers.
In addition, the TMS090N03ECP is also suitable for automotive applications. It is capable of operating in a wide temperature range, from -55°C to + 125°C, which makes it suitable for use in automotive applications where temperature is often extreme. It is also very low in noise, which makes it suitable for applications where high noise levels would be a problem.
The TMS090N03ECP is a low-leakage, high-performance device that is suitable for use in a wide range of applications. It offers excellent performance, reliability, and compatibility. It is a highly efficient device that is suitable for many applications. It is most suitable for applications in which high speed switching, low noise, and automotive-grade temperature range are necessary.
The specific data is subject to PDF, and the above content is for reference
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