TSM036N03PQ56 RLG

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The TSM036N03PQ56 RLG is a single N-Channel Enhancement Mode Field-Effect Transistor (FET) based on the seventh generation PowerTrench MOSFET technology. This device is optimized for power switching applications, providing improved FET characteristics with low R_DS(ON) and low gate charge. It is designed to minimize on-state losses and increase efficiency while ensuring fast switching speeds.

The TSM036N03PQ56 RLG is typically used in applications such as switching converters and voltage regulators, DC-DC converters, DC-DC controllers, and general-purpose power switching. It is available in a very small, space-saving PowerPAK SC-70 package. This device offers improved electrical performance with no compromise on the size and power handling capabilities.

Description

The TSM036N03PQ56 RLG features 30V nominal drain voltage (V_DS), enhancement-mode protection due to its built-in Gate-to-Source Zener diode, extended drain-to-source avalanche energy rating (EAS), low body diode reverse recovery time, lower capacitance values, and improved on-resistance. It has a relatively low gate charge, making it suitable for use in switching applications.

The TSM036N03PQ56 RLG also provides exceptional safety and protection features, including ESD and Avalanche protection, overvoltage protection, protected gate drive and temperature protection. In addition, it has an integrated Zener diode for Gate-Source protection.

Features and Benefits

• Low R_DS(on) and low gate charge
• Fast switching speeds
• Integrated Gate-to-Source Zener diode for ESD protection
• Avalanche energy rating (EAS) of up to 3.2mJ
• Low body diode reverse recovery time
• Overvoltage protection
• Protected gate drive and temperature protection
• Available in a space-saving PowerPAK SC-70 package

Application Fields and Working Principle

The TSM036N03PQ56 RLG is designed for applications that require precise control of a load in order to maintain power efficiency and low power consumption, such as in switching converters, voltage regulators, DC-DC converters, and general-purpose power switching. It is also suitable in power switching circuits, where fast switching is required, as it can switch from off to on in under 50 ns.

The device works on the principle of voltage conduction on the Gate-Source and drain-Source terminals (VG-S and VD-S), which produces a channel between the drain-source. When the terminal voltage rises to a certain point (Vth), a gate voltage (VGS) corresponding to the terminal voltage begins to be applied to the FET channel. This in turn creates an electrical channel between the source and the drain. When the load current passes through this channel, the load voltage will drop to a lower voltage based on its resistance. This helps reduce losses due to excessive voltage and power consumption.

In a DC-DC converters, the TSM036N03PQ56 RLG can be used as a switch in a voltage regulator loop to control the voltage. It can also be used in switching converters where fast switching is required as its low gate charge ensures fast switching speed and reduced losses. The low R_DS(on) makes it suitable for high current switching applications with low losses.

To reduce ESD, the device also has an integrated Gate-Source Zener diode which prevents voltage fluctuations due to static discharges and prevents damage to the Gate-Source junction. Additionally, the Avalanche energy rating (EAS) of up to 3.2mJ can protect the device from high voltage transients. The low body diode reverse recovery time also prevents the body diode from generating leakage current while being switched off.

The TSM036N03PQ56 RLG is an efficient, power-saving single N-Channel enhancement mode FET designed to optimize and enhance power handling capabilities while minimizing losses and increasing efficiency in power switching applications.

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