TSM05N03CW RPG

Vgs(th) (Max) @ Id:	3V @ 250µA
Package / Case:	TO-261-4, TO-261AA
Supplier Device Package:	SOT-223
Mounting Type:	Surface Mount
Operating Temperature:	-55°C ~ 150°C (TJ)
Power Dissipation (Max):	3W (Ta)
FET Feature:	--
Input Capacitance (Ciss) (Max) @ Vds:	555pF @ 15V
Vgs (Max):	±20V
Gate Charge (Qg) (Max) @ Vgs:	7nC @ 5V
Series:	--
Rds On (Max) @ Id, Vgs:	60 mOhm @ 5A, 10V
Drive Voltage (Max Rds On, Min Rds On):	4.5V, 10V
Current - Continuous Drain (Id) @ 25°C:	5A (Ta)
Drain to Source Voltage (Vdss):	30V
Technology:	MOSFET (Metal Oxide)
FET Type:	N-Channel
Part Status:	Active
Packaging:	Tape & Reel (TR)

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Introduction to TSM05N03CW RPG Application Field and Working Principle

TSM05N03CW RPG (registered plastic packaged) from Bourns is a single N-channel enhancement mode power FET. It features low gate charge, low output capacitance and improved avalanche energy ratings, making it an ideal choice for applications such as power supply regulating, power motor control, and appliance protection. The TSM05N03CW RPG is designed for precision level-control of power electronics, providing high performance and reliable operation with minimal external components required. This article will provide an overview of the TSM05N03CW RPG application field and working principle.

Application Field

The TSM05N03CW RPG is ideal for applications where precise control of power electronics is required. It provides high performance and reliable operation with minimal external components required. Examples of such applications include:

• Power Supply Regulating
• Power Motor Control
• Appliance Protection
• DC Motor Speed Control
• AC Power Control
• Inductive Heating Controls

The TSM05N03CW RPG is also suitable for use in digital electronics, and mixed-mode analog circuits. Due to its low gate charge and output capacitance, it is one of the best performing FET devices on the market and is widely used in various electronic products.

Working Principle

The working principle of the TSM05N03CW RPG is based on the N-channel enhancement mode power FET (field-effect transistor). In an N-channel enhancement mode power FET, the drain and the source are separated by an insulated gate that is connected to a voltage potential. As the potential rises, a current will flow between the drain and the source, allowing the device to control the conduction in the channel between them. The magnitude of this current is determined by the voltage potential applied to the gate and the properties of the channel between the drain and source.When the TSM05N03CW RPG is used as as a switch, it can be triggered on or off by varying the voltage potential applied to the gate. This can be done with a basic circuit containing a gate, a source, and a drain. When the source and the drain are connected to a current, the TSM05N03CW RPG will draw the voltage from the source and divert it to the drain. When the voltage applied to the gate rises, the current flow is turned on. When the voltage falls, the current is turned off. The maximum current that can be drawn is determined by the ratings of the device, limited by the RDSon (drain to source on resistance).

Conclusion

The Bourns TSM05N03CW RPG is a single N-channel enhancement mode power FET that is widely used in applications that require precise control of power electronics. It is designed for low gate charge and output capacitance, which makes it an ideal choice for power supply regulating, power motor control, appliance protection, and many other applications. This article provided an overview of the TSM05N03CW RPG application field and working principle.

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