Allicdata Part #: | TSM080N03PQ56RLGTR-ND |
Manufacturer Part#: |
TSM080N03PQ56 RLG |
Price: | $ 0.16 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Taiwan Semiconductor Corporation |
Short Description: | MOSFET N-CH 30V 73A 8PDFN |
More Detail: | N-Channel 30V 73A (Tc) 69W (Tc) Surface Mount 8-PD... |
DataSheet: | TSM080N03PQ56 RLG Datasheet/PDF |
Quantity: | 2500 |
2500 +: | $ 0.14598 |
Vgs(th) (Max) @ Id: | 2.5V @ 250µA |
Package / Case: | 8-PowerTDFN |
Supplier Device Package: | 8-PDFN (5x6) |
Mounting Type: | Surface Mount |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Power Dissipation (Max): | 69W (Tc) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 843pF @ 15V |
Vgs (Max): | ±20V |
Gate Charge (Qg) (Max) @ Vgs: | 14.4nC @ 10V |
Series: | -- |
Rds On (Max) @ Id, Vgs: | 8 mOhm @ 14A, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 4.5V, 10V |
Current - Continuous Drain (Id) @ 25°C: | 73A (Tc) |
Drain to Source Voltage (Vdss): | 30V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Active |
Packaging: | Tape & Reel (TR) |
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The TSM080N03PQ56 RLG is a power MOSFET transistors that is suitable for a wide variety of applications. It is mainly used in automotive, industrial and consumer electronics. The transistor utilizes a dual-gate construction that is designed to provide exceptional performance in applications such as switching, resonant topology, linear operation and synchronous rectification. It allows for a high-current capability and a low on-state resistance, making it an ideal choice for those demanding applications.
Features
- Low on-state resistance
- High current capability
- Dual-gate construction
- Excellent ESD hardening
- Low gate charge
- AEC-Q101 Qualified
- Ideal for automotive, industrial and consumer electronics applications
Applications
- Switching
- Resonant topology
- Linear operation
- Synchronous rectification
- Automotive and industrial applications
- Consumer electronics
Working Principle
The TSM080N03PQ56 RLG is a power MOSFET transistor with two gates that are connected via an internal resistor Rg. The transistor operates in the enhancement mode, meaning that the circuit will be turned on when a positive voltage is applied to the gate. The resistance between the two gates is adjustable, allowing for a wide range of current capabilities. The transistor is designed with a low on-state resistance, meaning that it can deliver high power densities even at lower voltages. The transistor also utilizes a dual-gate construction that helps to improve electromagnetic compatibility, as well as providing superior performance in applications such as switching and synchronous rectification. The MOSFET has a low gate charge, allowing for faster switching at higher frequencies. The transistor is also AEC-Q101 qualified and has excellent ESD hardening, making it an ideal solution for those demanding applications.
Conclusion
The TSM080N03PQ56 RLG is a power MOSFET transistors that is suitable for a wide variety of applications, mainly in the automotive, industrial and consumer electronics fields. The transistor utilizes a dual-gate construction that is designed to provide exceptional performance in applications such as switching, resonant topology, linear operation and synchronous rectification. It also allows for a high-current capability and a low on-state resistance, making it an ideal choice for those demanding applications. The MOSFET has a low gate charge, allowing for faster switching at higher frequencies, as well as excellent ESD hardening. It is AEC-Q101 Qualified, making it a reliable and robust solution for those demanding applications.
The specific data is subject to PDF, and the above content is for reference
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