Allicdata Part #: | TSM070NB04CRRLGTR-ND |
Manufacturer Part#: |
TSM070NB04CR RLG |
Price: | $ 0.28 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Taiwan Semiconductor Corporation |
Short Description: | MOSFET SINGLE N-CHANNEL TRENCH |
More Detail: | N-Channel 40V 15A (Ta), 75A (Tc) 3.1W (Ta), 83W (T... |
DataSheet: | TSM070NB04CR RLG Datasheet/PDF |
Quantity: | 1000 |
2500 +: | $ 0.25107 |
Vgs(th) (Max) @ Id: | 4V @ 250µA |
Package / Case: | 8-PowerLDFN |
Supplier Device Package: | 8-PDFN (5x6) |
Mounting Type: | Surface Mount |
Operating Temperature: | -55°C ~ 175°C (TJ) |
Power Dissipation (Max): | 3.1W (Ta), 83W (Tc) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 2403pF @ 20V |
Vgs (Max): | ±20V |
Gate Charge (Qg) (Max) @ Vgs: | 40nC @ 10V |
Series: | -- |
Rds On (Max) @ Id, Vgs: | 7 mOhm @ 15A, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 10V |
Current - Continuous Drain (Id) @ 25°C: | 15A (Ta), 75A (Tc) |
Drain to Source Voltage (Vdss): | 40V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Active |
Packaging: | Tape & Reel (TR) |
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The TSM070NB04CR RLG is a powerful field effect transistor (FET) and metal-oxide semiconductor FET (MOSFET). It is one of the earliest members of the RLG series of FETs. This FET was primarily designed to be used in digital applications with relatively low power consumption.
The TSM070NB04CR RLG is a single-gate FET, meaning that it uses one p-type and one n-type semiconductor material to create the two gates which control current flow between source and drain electrodes. The gate controls the flow of current across the junction and is able to do so without any depletion or enhancement in the semiconductor material. This functionality can be used to control the current flow between the source and drain in an application where such control is desired. Also, the single-gate FET\'s small size makes them ideal for applications where space is at a premium.
The TSM070NB04CR RLG has a very low threshold voltage of only 0.6V and can handle up to a maximum of 16 volts. It has a drain-source resistance of only 0.09 ohms and can handle up to a maximum of 7.5 amps. It has a fast switching speed of 0.4ns with a low parasitic capacitance of only 1.7pF. These FETs are able to work with orders of magnitude faster than traditional BJTs.
The TSM070NB04CR RLG is most commonly used in medium-to-low power applications such as LED driving, automotive electronics, power management, amplifier circuits, and high-speed communication interface circuits. It is also used in some low-power digital logic switching and interfacing circuits. The FET\'s low resistance, low voltage range, fast switching speed and low parasitic capacitance make it well suited for these sorts of applications.
Due to the wide range of applications the TSM070NB04CR RLG is suitable for, it is widely used by system design engineers when developing new products such as mobile phones, tablets, and computers. The wide range of features of the FET make it ideal for complex circuitry and other applications requiring high levels of precision.
The TSM070NB04CR RLG is an excellent device for applications requiring low power consumption with fast switching ability. Its small size and low threshold voltage make it a great choice for when space is at a premium or when fast switching times need to be achieved. Its low resistance, small size and low operating voltage range make it ideal for a wide range of applications.
The specific data is subject to PDF, and the above content is for reference
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