TSM070NB04CR RLG Allicdata Electronics
Allicdata Part #:

TSM070NB04CRRLGTR-ND

Manufacturer Part#:

TSM070NB04CR RLG

Price: $ 0.28
Product Category:

Discrete Semiconductor Products

Manufacturer: Taiwan Semiconductor Corporation
Short Description: MOSFET SINGLE N-CHANNEL TRENCH
More Detail: N-Channel 40V 15A (Ta), 75A (Tc) 3.1W (Ta), 83W (T...
DataSheet: TSM070NB04CR RLG datasheetTSM070NB04CR RLG Datasheet/PDF
Quantity: 1000
2500 +: $ 0.25107
Stock 1000Can Ship Immediately
$ 0.28
Specifications
Vgs(th) (Max) @ Id: 4V @ 250µA
Package / Case: 8-PowerLDFN
Supplier Device Package: 8-PDFN (5x6)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Power Dissipation (Max): 3.1W (Ta), 83W (Tc)
FET Feature: --
Input Capacitance (Ciss) (Max) @ Vds: 2403pF @ 20V
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 40nC @ 10V
Series: --
Rds On (Max) @ Id, Vgs: 7 mOhm @ 15A, 10V
Drive Voltage (Max Rds On, Min Rds On): 10V
Current - Continuous Drain (Id) @ 25°C: 15A (Ta), 75A (Tc)
Drain to Source Voltage (Vdss): 40V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
Packaging: Tape & Reel (TR) 
Description

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The TSM070NB04CR RLG is a powerful field effect transistor (FET) and metal-oxide semiconductor FET (MOSFET). It is one of the earliest members of the RLG series of FETs. This FET was primarily designed to be used in digital applications with relatively low power consumption.

The TSM070NB04CR RLG is a single-gate FET, meaning that it uses one p-type and one n-type semiconductor material to create the two gates which control current flow between source and drain electrodes. The gate controls the flow of current across the junction and is able to do so without any depletion or enhancement in the semiconductor material. This functionality can be used to control the current flow between the source and drain in an application where such control is desired. Also, the single-gate FET\'s small size makes them ideal for applications where space is at a premium.

The TSM070NB04CR RLG has a very low threshold voltage of only 0.6V and can handle up to a maximum of 16 volts. It has a drain-source resistance of only 0.09 ohms and can handle up to a maximum of 7.5 amps. It has a fast switching speed of 0.4ns with a low parasitic capacitance of only 1.7pF. These FETs are able to work with orders of magnitude faster than traditional BJTs.

The TSM070NB04CR RLG is most commonly used in medium-to-low power applications such as LED driving, automotive electronics, power management, amplifier circuits, and high-speed communication interface circuits. It is also used in some low-power digital logic switching and interfacing circuits. The FET\'s low resistance, low voltage range, fast switching speed and low parasitic capacitance make it well suited for these sorts of applications.

Due to the wide range of applications the TSM070NB04CR RLG is suitable for, it is widely used by system design engineers when developing new products such as mobile phones, tablets, and computers. The wide range of features of the FET make it ideal for complex circuitry and other applications requiring high levels of precision.

The TSM070NB04CR RLG is an excellent device for applications requiring low power consumption with fast switching ability. Its small size and low threshold voltage make it a great choice for when space is at a premium or when fast switching times need to be achieved. Its low resistance, small size and low operating voltage range make it ideal for a wide range of applications.

The specific data is subject to PDF, and the above content is for reference

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