TSM045NA03CR RLG Allicdata Electronics

TSM045NA03CR RLG Discrete Semiconductor Products

Allicdata Part #:

TSM045NA03CRRLGTR-ND

Manufacturer Part#:

TSM045NA03CR RLG

Price: $ 0.22
Product Category:

Discrete Semiconductor Products

Manufacturer: Taiwan Semiconductor Corporation
Short Description: MOSFET N-CH 30V 108A 8PDFN
More Detail: N-Channel 30V 108A (Tc) 89W (Tc) Surface Mount 8-P...
DataSheet: TSM045NA03CR RLG datasheetTSM045NA03CR RLG Datasheet/PDF
Quantity: 5000
2500 +: $ 0.20590
Stock 5000Can Ship Immediately
$ 0.22
Specifications
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Package / Case: 8-PowerTDFN
Supplier Device Package: 8-PDFN (5x6)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 89W (Tc)
FET Feature: --
Input Capacitance (Ciss) (Max) @ Vds: 1194pF @ 15V
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 19nC @ 10V
Series: --
Rds On (Max) @ Id, Vgs: 4.5 mOhm @ 18A, 10V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Current - Continuous Drain (Id) @ 25°C: 108A (Tc)
Drain to Source Voltage (Vdss): 30V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
Packaging: Tape & Reel (TR) 
Description

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The TSM045NA03CR RLG is a specialized transistors made for a very specific application. The device is a single MOSFET that is capable of very high current handling and low-voltage operation. The device is typically used in radio frequency, powerline communications, as well as high-power switching applications. It is designed to provide very low on resistance and high current handling capability.The device itself is a four-terminal insulated-gate bipolar transistor (IGBT). It uses a metal-oxide semiconductor field-effect transistor (MOSFET) as the main component of the transistor. The MOSFET is the device that is controlled by the gate voltage and provides the on/off switching of the transistor. The four terminals of the device are the gate, drain, source, and the control terminal. The gate is the device control, while the drain and source provide the current paths. The control terminal is used to connect the transistor to voltage or current reference in order to control the transistor’s operation. The transistor has very high switching frequency and can operate up to 1 MHz.The TSM045NA03CR RLG has several features that make it ideal for radio frequency and powerline communications. The device has very low on resistance and high current capability, which makes it perfect for switching and powerline communication. The transistor also has very low threshold voltage, meaning that it is easier to control and has a faster switching time than other MOSFETs. The TSM045NA03CR RLG also has a reduced form factor, which makes it easier to install in tight spaces.The device can be used in many different applications, including radio frequency, powerline, and high-power switching applications. In radio frequency applications, the device can be used to provide low-noise operation in transmitters and receivers, while also providing reliable switching. In powerline applications, the device can be used to provide high-speed data communication and reliable high-current switching. In high-power applications, the device can provide high-voltage switching, allowing high loads to be switched quickly and reliably.Overall, the TSM045NA03CR RLG is a versatile transistor that can be used for a variety of applications. It is a perfect solution for radio frequency, powerline, and high-power switching applications. With its reduced form factor, higher current capacity, and low on resistance, the device is sure to provide a reliable and efficient solution for any application.

The specific data is subject to PDF, and the above content is for reference

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