Allicdata Part #: | TSM033NA04LCRRLGTR-ND |
Manufacturer Part#: |
TSM033NA04LCR RLG |
Price: | $ 0.49 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Taiwan Semiconductor Corporation |
Short Description: | MOSFET N-CH 40V 141A 8PDFN |
More Detail: | N-Channel 40V 141A (Tc) 125W (Tc) Surface Mount 8-... |
DataSheet: | TSM033NA04LCR RLG Datasheet/PDF |
Quantity: | 2500 |
2500 +: | $ 0.44629 |
Vgs(th) (Max) @ Id: | 2.5V @ 250µA |
Package / Case: | 8-PowerTDFN |
Supplier Device Package: | 8-PDFN (5x6) |
Mounting Type: | Surface Mount |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Power Dissipation (Max): | 125W (Tc) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 3130pF @ 20V |
Vgs (Max): | ±20V |
Gate Charge (Qg) (Max) @ Vgs: | 47nC @ 10V |
Series: | -- |
Rds On (Max) @ Id, Vgs: | 3.3 mOhm @ 20A, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 4.5V, 10V |
Current - Continuous Drain (Id) @ 25°C: | 141A (Tc) |
Drain to Source Voltage (Vdss): | 40V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Active |
Packaging: | Tape & Reel (TR) |
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The TSM033NA04LCR RLG is a single N-channel enhancement mode MOSFET (metal oxide semiconductor field effect transistor) with a maximum drain current of 3.3 Amperes. This MOSFET belongs to the ultra-low on-resistance family of STMicroelectronics, designed to drive inductive and capacitive loads. Its operating temperature range is from -40°C to 150°C, and its drain source breakdown voltage is 30V.The TSM033NA04LCR RLG MOSFET provides excellent switching performance, thanks to its very low gate charge, fast switching speed, low gate resistance and low capacitance. This device can be used in a wide range of applications such as switching power supplies, motor controls, UPSs, DC-DC converters, consumer electronics and automotive systems.The working principle of the TSM033NA04LCR RLG MOSFET is based on the enhancement mode. It is a type of MOSFET wherein the gate threshold voltage is set to a positive voltage in order to activate the MOSFET. This positive voltage turns on the internal transistor, which allows the signal to flow from the source to the drain.The working of the TSM033NA04LCR RLG MOSFET can be explained with the help of a circuit diagram. When the voltage at the gate is higher than the threshold voltage, it creates an electric field between the gate and drain. This electric field attracts the electrons to the gate, which consequently lowers the resistance between the source and the drain. This allows the electric current to flow from the source to the drain.The TSM033NA04LCR RLG MOSFET has a number of advantages such as high robustness, low power consumption, fast switching times, low gate charges and low on-resistance. Furthermore, the device has an integrated body diode, which provides protection from inductive load transients.The TSM033NA04LCR RLG MOSFET is suitable for a variety of applications, including switch mode power supplies, motor and solenoid control, DC-DC switching converters, and other applications which require high speed and low losses. This MOSFET is increasingly being used in consumer electronics such as mobile phones and tablets due to its low power consumption and fast switching times.The TSM033NA04LCR RLG MOSFET is a reliable and efficient device, which can be used in many different applications. It offers low resistance, fast switching, and good power efficiency. Its integrated body diode provides protection from inductive load transients, allowing for use in harsh environments. The device is cost-effective and can help to reduce the size and complexity of a power system.
The specific data is subject to PDF, and the above content is for reference
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