TSM085N03PQ33 RGG Allicdata Electronics
Allicdata Part #:

TSM085N03PQ33RGGTR-ND

Manufacturer Part#:

TSM085N03PQ33 RGG

Price: $ 0.15
Product Category:

Discrete Semiconductor Products

Manufacturer: Taiwan Semiconductor Corporation
Short Description: MOSFET N-CH 30V 52A 8PDFN
More Detail: N-Channel 30V 52A (Tc) 37W (Tc) Surface Mount 8-PD...
DataSheet: TSM085N03PQ33 RGG datasheetTSM085N03PQ33 RGG Datasheet/PDF
Quantity: 5000
5000 +: $ 0.13237
Stock 5000Can Ship Immediately
$ 0.15
Specifications
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Package / Case: 8-PowerWDFN
Supplier Device Package: 8-PDFN (3x3)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 37W (Tc)
FET Feature: --
Input Capacitance (Ciss) (Max) @ Vds: 817pF @ 15V
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 14.3nC @ 10V
Series: --
Rds On (Max) @ Id, Vgs: 8.5 mOhm @ 13A, 10V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Current - Continuous Drain (Id) @ 25°C: 52A (Tc)
Drain to Source Voltage (Vdss): 30V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
Packaging: Tape & Reel (TR) 
Description

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The TSM085N03PQ33 RGG is a type of power transistor FET (Field Effect Transistor) integrated circuit (IC) device, which is classified as a single MOSFET. This type of device is commonly used in various kinds of applications, as it provides excellent electrical characteristics, simple design, and a low cost of production.

The device consists of a single MOSFET structure, with two source connections and a single drain connection. It also features a built in gate resistor and has three terminals for connecting to the circuit: Gate (G), Source (S) and Drain (D).

The TSM085N03PQ33 RGG is most commonly used in power supplies, DC/DC converters, and other high-frequency applications that require a fast switching speed. The device also has a low input capacitance and a low output capacitance, which makes it suitable for switching applications that require high-speed performance. Additionally, the device has a very low on resistance, allowing for higher current handling capacity compared to other FETs.

This device works on the principle of the “field effect”, where by the electric field created by a voltage applied to the gate modulates the current flow through the channels of the transistor. When a positive voltage is applied to the gate terminal, the current flow increases, while when a negative voltage is applied, the current flow decreases. This makes it suitable for controlling the voltage levels in the circuit.

In addition to its use in power supplies and DC/DC converters, the TSM085N03PQ33 RGG is also popularly used in high-frequency switching applications, as it has a high switching speed. Other applications include: audio amplifiers, analog switches, power amplifiers, and pulse width modulation (PWM).

The TSM085N03PQ33 RGG is a highly reliable and robust device, which has been proven to perform successfully in a variety of applications. This makes it an excellent choice for manufacturers, who need to find a suitable device for their circuits. Furthermore, the device has a wide operational temperature range, making it suitable for a variety of working environments.

The specific data is subject to PDF, and the above content is for reference

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