TSM060N03ECP ROG

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The TSM060N03ECP ROG (RRG) from ON Semiconductor is a P-channel enhancement mode MOSFET designed for applications requiring low gate drive power, fast switching times, and low on-state resistance. It is well suited for a variety of applications ranging from load switch, battery switch, and power management in automotive and industrial equipment. This article will discuss the application fields, the operating principle, and the performance characteristics of the TSM060N03ECP ROG.

The TSM060N03ECP ROG is a small signal, low-on-state resistance MOSFET with a robust octagonal-shaped package design. The device is well suited for use in a variety of applications, including: small signal switches, battery switches, small signal drivers, and low-side or high-side drivers. It can operate efficiently at high frequency, so it is well suited for use in high-frequency switching applications, such as Class-D audio amplifiers. The device can also be used as a power management switch in systems that require a low-on-state resistance, such as automotive and industrial power supplies.

The operating principle of the TSM060N03ECP ROG is based on the transistor effect, which allows for the control of current flow through the device. The device consists of a source, gate, and drain terminals, which are connected to anode, gate, and cathode connections, respectively. Applying a voltage to the gate will cause a field effect and the current will flow from source to drain. As the drain-source voltage increases, more electrons can be transferred from source to drain, thus decreasing the on-state resistance of the device.

The TSM060N03ECP ROG offers a low threshold voltage and a high on-state resistance, making it well suited for applications that require high performance at low gate drive power. This device offers excellent switching characteristics, allowing for fast turn-on and turn-off times. Additionally, it offers low gate charge and charge-to-breakdown voltages, allowing for higher efficiency and lower power consumption.

Tested results indicate that the RDS on-state resistance of the TSM060N03ECP ROG is only 1.3 mΩ, which makes it suitable for low-current applications such as automotive, computer, and mobile device power management. The device can also handle frequencies up to 10 MHz, making it suitable for use in high-frequency switching applications. Additionally, the P-channel device offers excellent on/off switch times, with a turn-on time as low as 0.9 ns and a turn-off time as low as 1.5 ns.

The TSM060N03ECP ROG is a low-on-state resistance MOSFET which offers excellent high-frequency switching performance, fast switching times, and low gate drive power. Its robust octagonal shaped package design makes it suitable for use in a variety of applications, including automotive and industrial power supplies, computer and mobile device power management, and high-frequency switching applications. Its low on-state resistance and fast switching times offer increased efficiency and reduced power consumption. It is an ideal choice for applications that require a low-on-state resistance MOSFET.

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