Allicdata Part #: | TSM033NA03CRRLGTR-ND |
Manufacturer Part#: |
TSM033NA03CR RLG |
Price: | $ 0.28 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Taiwan Semiconductor Corporation |
Short Description: | MOSFET N-CH 30V 129A 8PDFN |
More Detail: | N-Channel 30V 129A (Tc) 96W (Tc) Surface Mount 8-P... |
DataSheet: | TSM033NA03CR RLG Datasheet/PDF |
Quantity: | 2500 |
2500 +: | $ 0.25213 |
Specifications
Vgs(th) (Max) @ Id: | 2.5V @ 250µA |
Package / Case: | 8-PowerTDFN |
Supplier Device Package: | 8-PDFN (5x6) |
Mounting Type: | Surface Mount |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Power Dissipation (Max): | 96W (Tc) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 1850pF @ 15V |
Vgs (Max): | ±20V |
Gate Charge (Qg) (Max) @ Vgs: | 31nC @ 10V |
Series: | -- |
Rds On (Max) @ Id, Vgs: | 3.3 mOhm @ 21A, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 4.5V, 10V |
Current - Continuous Drain (Id) @ 25°C: | 129A (Tc) |
Drain to Source Voltage (Vdss): | 30V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Active |
Packaging: | Tape & Reel (TR) |
Description
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Introduction
TSM033NA03CR RLG is an advanced three-terminal N-channel, P-channel Metal-Oxide-Semiconductor Filed-Effect Transistor (Mosfet) which utilizes low-resistance lateral field-oxide as the gate technology which increases the operating temperature range and enhances the reliability. It is widely used in electronic power control and switching applications for better performance and greater energy efficiency.Application Field of TSM033NA03CR RLG
The most prevalent applications of TSM033NA03CR RLG include, but not limited to:• High-speed and high-temperature switching: TSM033NA03CR RLG is well suited for applications which require high-speed and high-temperature switching such as DC to DC converters, automotive power systems and HVAC designs. It offers a good trade-off between leakage current, high-current and high-frequency operation.• High-reliability, low-noise applications: TSM033NA03CR RLG is the perfect solution when used in high-reliability and low-noise applications requiring a long lifecycle and low power consumption. It is used in many industrial and commercial applications including solar inverters, server power supplies and contactors.• Automotive applications: TSM033NA03CR RLG is one of the most popular devices used in automotive applications due to its low gate-to-drain capacitance, low on-resistance, and fast switching time. Such devices are used in fuel injectors, fan controls, alternator voltage control, starter motor control and ECU switching.Working Principle of TSM033NA03CR RLG
TSM033NA03CR RLG uses metal-oxide-semiconductor technology which is the foundation of all modern electronics. As voltage is applied to the gate, charge carriers are induced within the channel region between drain and source, this resulting in current flowing through the device. With the gate-to-drain capacitance kept to a minimum, it is possible to achieve high-speed operation.At the same time, TSM033NA03CR RLG offers good linearity characteristics which make them ideal for low-noise and high-reliability applications; allowing for better control of power for devices such as servers and solar energy inverters. This makes them more energy efficient and reliable.The gate of the TSM033NA03CR RLG is surrounded by a low-resistance lateral field-oxide which increases the operating temperature range and increases the reliability of the device. This ensures that the device performs correctly even when subjected to extreme temperatures.Conclusion
TSM033NA03CR RLG is an advanced three-terminal N-channel, P-channel Metal-Oxide-Semiconductor Filed-Effect Transistor (Mosfet) which utilizes low-resistance lateral field-oxide as the gate technology. It is used in many electronic power control and switching applications, providing better performance and greater energy efficiency than other devices. It offers high-speed and high-temperature switching capabilities and is well-suited for high-reliability and low-noise applications. It is also widely used in automotive applications and is ideal for applications which require long lifecycles, low power consumption and fast switching times. The lateral field-oxide surrounding the gate increases the operating temperature range and enhances the reliability of the device.The specific data is subject to PDF, and the above content is for reference
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