Allicdata Part #: | TSM088NA03CRRLGTR-ND |
Manufacturer Part#: |
TSM088NA03CR RLG |
Price: | $ 0.18 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Taiwan Semiconductor Corporation |
Short Description: | MOSFET N-CH 30V 61A 8PDFN |
More Detail: | N-Channel 30V 61A (Tc) 56W (Tc) Surface Mount 8-PD... |
DataSheet: | TSM088NA03CR RLG Datasheet/PDF |
Quantity: | 5000 |
2500 +: | $ 0.15758 |
Vgs(th) (Max) @ Id: | 2.5V @ 250µA |
Package / Case: | 8-PowerTDFN |
Supplier Device Package: | 8-PDFN (5x6) |
Mounting Type: | Surface Mount |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Power Dissipation (Max): | 56W (Tc) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 750pF @ 15V |
Vgs (Max): | ±20V |
Gate Charge (Qg) (Max) @ Vgs: | 12.6nC @ 10V |
Series: | -- |
Rds On (Max) @ Id, Vgs: | 8.8 mOhm @ 13A, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 4.5V, 10V |
Current - Continuous Drain (Id) @ 25°C: | 61A (Tc) |
Drain to Source Voltage (Vdss): | 30V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Active |
Packaging: | Tape & Reel (TR) |
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A field-effect transistor (FET) is a semiconductor device commonly used to control current or voltage in integrated circuits (ICs). They are used for amplification, switching, and signal manipulation. The TSM088NA03CR RLG is an N-channel enhancement-mode FET, with guaranteed continuous drain currents up to 2A and an output resistance of 0.08 Ohms at 1A current. It has a maximum breakdown voltage (BVDSS) of 88V, a gate-source voltage range of -2.0 to -10V, and a drain-source on-state resistance (RDS(on)) of 0.7 Ohms.
The TSM088NA03CR RLG can be used in a variety of applications, such as switching, signal processing, and amplification. In switching applications, it can be employed to control the flow of current in an IC. When a positive voltage is applied to the gate of the FET, it opens up and allows a current to flow from the drain to the source. This is known as the "on" state. Conversely, when no voltage is applied, the FET is turned "off", and the current flow is blocked. In both cases, the current flow is completely governed by the voltage applied to the gate.
The TSM088NA03CR RLG can also be used in signal processing applications. In these applications, the FET acts as a voltage controlled amplifier, amplifying signals based on the voltage applied to the gate. This allows for greater control over the signal being processed. Another popular application for the TSM088NA03CR RLG is in power supplies. It can be used to regulate the output voltage of a supply rail, allowing voltage outputs to be precisely regulated and maintained.
The working principle behind the TSM088NA03CR RLG is simple. It contains an insulating gate material between two heavily doped semiconductor materials. This gate material forms what is known as a "channel", which carries the current from the drain to the source. When a voltage is applied to the gate, the channel is opened up, allowing current to flow. The strength of the current is determined by the size of the channel and the voltage applied to the gate.
The TSM088NA03CR RLG has numerous uses in a variety of applications, making it a popular choice for electronics designers. Its low on-state resistance and high current rating make it suitable for high-power and high-frequency applications, while its small physical size and low cost make it suitable for low-power applications. Its wide range of operating voltages and gate source voltages also make it versatile and suitable for a variety of applications.
The specific data is subject to PDF, and the above content is for reference
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