TSM061NA03CR RLG

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The TSM061NA03CR RLG is a single, N-channel, Logic Level, Enhancement Mode Field Effect Transistor (FET). This type of transistor is designed for high-side load switching applications where a low control voltage is needed. This transistor is a low capacitance device and provides very low forward voltage drop and a low Ron resistance. The TSM061NA03CR RLG is a high-performing and highly efficient transistor with a maximum drain-source breakdown voltage of 60V, a continuous drain current of 18A, and a maximum pulsed drain current of 27A.

The TSM061NA03CR RLG has a source-drain diode which is self-commutated. This diode is essential to the transistor’s operation as it helps provide a low voltage source for switching the FET. The diode has a low forward voltage and is fast enough for applications with high frequency switching. The RLG (residual layer gate) structure allows for gate-source capacitances to be tuned to ensure optimized gate-source turn-on times and low total gate charging time.

The TSM061NA03CR RLG also boasts a wide operating temperature range of -55°C to 150°C. This makes this transistor suitable for use in tough industrial and automotive environments. In addition, the device is ESD-protected. This means it can withstand up to 2000 volts at temperatures up to 25°C.

In terms of its application field, the TSM061NA03CR RLG is ideally suited for automotive applications where high-side load switching is required, such as in DC-DC converters, motor drives, and lamps. This device can be used in applications where very low control voltage is needed for switching. The RLG structure of this device also allows for improved protection from ESD, voltage spikes, and transients.

Now let’s take a look at the working principle of the TSM061NA03CR RLG. This device is controlled by the voltage applied to its gate terminal. When the voltage applied to its gate terminal is above the threshold voltage, the FET is turned on, thereby allowing current to flow from the source to the drain. When the voltage applied to its gate terminal is below the threshold voltage, the FET is turned off and no current will flow from the source to the drain.

In summary, the TSM061NA03CR RLG is a single N-channel Logic Level Enhancement Mode FET that is designed for high-side load switching applications where a low control voltage is needed. This device has a wide operating temperature range and is ESD-protected. It is ideal for automotive applications such as DC-DC converters, motor drives, and lamps. The TSM061NA03CR RLG is controlled by the voltage applied to its gate terminal, and when this voltage is above the threshold voltage, current will flow from the source to the drain.

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