Allicdata Part #: | TSM070NB04LCRRLGTR-ND |
Manufacturer Part#: |
TSM070NB04LCR RLG |
Price: | $ 0.28 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Taiwan Semiconductor Corporation |
Short Description: | MOSFET SINGLE N-CHANNEL TRENCH |
More Detail: | N-Channel 40V 15A (Ta), 75A (Tc) 3.1W (Ta), 83W (T... |
DataSheet: | TSM070NB04LCR RLG Datasheet/PDF |
Quantity: | 1000 |
2500 +: | $ 0.25107 |
Specifications
Vgs(th) (Max) @ Id: | 2.5V @ 250µA |
Package / Case: | 8-PowerLDFN |
Supplier Device Package: | 8-PDFN (5x6) |
Mounting Type: | Surface Mount |
Operating Temperature: | -55°C ~ 175°C (TJ) |
Power Dissipation (Max): | 3.1W (Ta), 83W (Tc) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 2151pF @ 20V |
Vgs (Max): | ±20V |
Gate Charge (Qg) (Max) @ Vgs: | 39nC @ 10V |
Series: | -- |
Rds On (Max) @ Id, Vgs: | 7 mOhm @ 15A, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 4.5V, 10V |
Current - Continuous Drain (Id) @ 25°C: | 15A (Ta), 75A (Tc) |
Drain to Source Voltage (Vdss): | 40V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Active |
Packaging: | Tape & Reel (TR) |
Description
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<p>TSM070NB04LCR RLG (Reflected Light Gate), is a type of transistor known as a field-effect transistor (FET), a type of semiconductor device that controls the flow of electrical current between two terminals by modulating the electric field in a semiconductor channel. The TSM070NB04LCR is a single field-effect transistor, meaning it has one source, one drain, and one gate terminal. The structure of TSM070NB04LCR RLG is built on a silicon substrate, making it a silicon-on-insulator (SOI) FET.</p><p>The TSM070NB04LCR RLG can be used for a wide variety of applications including power management, switching, and data processing, as well as digital signal processing, linear and analog circuit design, and various types of analog-to-digital conversion. The TSM070NB04LCR RLG is also highly suited for use in RF applications, high-speed digital circuit designs, high-power switching, voltage regulators, and other power management applications.</p><p>The working principle of the TSM070NB04LCR RLG, as with all field-effect transistors, is based on the modulation of an electric field. The rule of current flow in a transistor comes from the ‘Noble’ Theory of Transistors, which states that when an electric field is applied to a semiconductor material, a change in current is induced in the material. The current flow is a function of the magnitude and direction of the electric field being applied.</p><p>In the case of TSM070NB04LCR RLG, a voltage bias is applied to the gate, which controls the electric field in the transistor channel, and thus the current in the channel. When a small voltage is applied to the gate, it creates a small electric field in the channel, which results in a small current between the source and the drain. As the voltage applied to the gate is increased, the electric field created in the channel increases, increasing the current flow between the source and the drain. This is what is referred to as the “on” state of an FET, and is how FETs are typically used to switch current on and off in electronic devices.</p><p>The TSM070NB04LCR RLG has several advantages over other types of transistors, including its small size, high speed switching, low power dissipation, and enhanced thermal stability. It is also capable of providing a wide dynamic range, allowing users to adjust the voltage threshold necessary to switch the FET on or off. The TSM070NB04LCR RLG is also capable of operating in both linear and saturated regions, enabling it to be used for both analog and digital applications.</p><p>Overall, the TSM070NB04LCR RLG is a versatile, efficient transistor capable of handling a variety of applications, from high power switching to low power analog circuits. It is highly suitable for use in RF, power management, and data processing applications, as well as digital signal processing, linear and analog circuit design, and various types of analog-to-digital conversion.</p>The specific data is subject to PDF, and the above content is for reference
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