UNR411L00A Discrete Semiconductor Products |
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Allicdata Part #: | UNR411L00ATB-ND |
Manufacturer Part#: |
UNR411L00A |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Panasonic Electronic Components |
Short Description: | TRANS PREBIAS PNP 300MW NS-B1 |
More Detail: | Pre-Biased Bipolar Transistor (BJT) PNP - Pre-Bias... |
DataSheet: | UNR411L00A Datasheet/PDF |
Quantity: | 1000 |
Moisture Sensitivity Level (MSL): | 1 (Unlimited) |
Lead Free Status / RoHS Status: | Contains lead / RoHS non-compliant |
1 +: | 0.00000 |
Resistor - Emitter Base (R2): | 4.7 kOhms |
Supplier Device Package: | NS-B1 |
Package / Case: | NS-B1 |
Mounting Type: | Through Hole |
Power - Max: | 300mW |
Frequency - Transition: | 80MHz |
Current - Collector Cutoff (Max): | 500nA |
Vce Saturation (Max) @ Ib, Ic: | 250mV @ 300µA, 10mA |
DC Current Gain (hFE) (Min) @ Ic, Vce: | 20 @ 5mA, 10V |
Series: | -- |
Resistor - Base (R1): | 4.7 kOhms |
Voltage - Collector Emitter Breakdown (Max): | 50V |
Current - Collector (Ic) (Max): | 100mA |
Transistor Type: | PNP - Pre-Biased |
Moisture Sensitivity Level (MSL): | -- |
Part Status: | Obsolete |
Lead Free Status / RoHS Status: | -- |
Packaging: | Tape & Box (TB) |
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UNR411L00A is a single pre-biased bipolar (BJT) Transistor, which is specially designed for low power switching and amplifier applications. This type of transistor is usually seen in low voltage, low power, and high frequency applications. Its maximum collector current rating is 0.2 Amps.
The UNR411L00A is a type of single pre-biased BJT transistor, which means that it is biased to be turned ‘on’ at the time of manufacture and testing. This type of transistor has a low threshold voltage and is capable of operating at low supply voltages. It also features a high input impedance and a low output impedance, both of which are beneficial in high frequency applications.
The UNR411L00A works based on the collect-emitter and base-emitter junctions, which are essentially two diodes attached to an amplifier. When a voltage is applied to the base-emitter junction, the collector and emitter current starts to flow. This current is essentially an amplified version of the input current applied to the base.
The gain of the UNR411L00A can be varied by changing the base current. This allows the user to control the output signal level of the transistor. In addition, the gain of this type of transistor can also be increased by adding an external capacitor across the collector-emitter junction. This allows the transistor to act as an amplifier, which can be used to generate low frequency sine waves.
In terms of applications, the UNR411L00A transistor can be used for a variety of tasks such as switching, power control, and signal amplification. This is due to its low noise, high frequency, and high input impedance characteristics. It is also used in a number of low voltage and low power applications, such as logic level switching, amplification of low level audio signals, and controlling the gain of an audio amplifier.
Furthermore, the UNR411L00A transistor can also be used in automotive applications, such as controlling the ignition timing or the speed of the engine. The transistor also finds use in medical applications, such as providing power to medical instruments or controlling the intensity of light in x-ray machines.
In summary, the UNR411L00A is a single pre-biased bipolar (BJT) transistor, which is especially suitable for low power switching and amplifier applications. It features a low voltage and current rating, as well as a high input impedance and low output impedance, allowing it to operate at high frequencies. Due to its versatile capabilities, the UNR411L00A is used for a variety of applications, such as logic level switching, audio amplification, and automotive and medical applications.
The specific data is subject to PDF, and the above content is for reference
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