UNR411E00A Discrete Semiconductor Products

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The UNR411E00A is a single, pre-biased bipolar junction transistor (BJT) integrated circuit (IC). It is a versatile device that can be used in a variety of applications, from industrial control to audio processing. The UNR411E00A is designed to provide superior performance in high-voltage, low-power applications.

Overview

The UNR411E00A consists of three active devices: a bipolar NPN transistor, a P-channel MOSFET, and a Schottky diode. All three devices are integrated onto a single die, with the peak power dissipation rating up to 1.0 Watt. The die has a footprint of 4mm x 5mm, which allows for a wide variety of mounting applications, such as printed circuit boards (PCB) and surface mount technology (SMT).

Features and Benefits

The UNR411E00A provides several features that make it ideal for a variety of applications. The device is pre-biased to a voltage of 2.0V, which eliminates the need for additional components to bias the transistors. The integrated Schottky diode protects the device from excessive reverse bias voltages. The NPN transistor has a collector-emitter voltage ratings up to 50V and the P-channel MOSFET has a drain-source voltage rating up to 40V. The UNR411E00A is available in a variety of packages, from leadless to hermetic. The device also features low power dissipation and tight operating temperature windows.

Application Field and Working Principle

The UNR411E00A can be used in a variety of applications, including motor control, HVAC control, automotive audio processing, switching regulators, and other high-voltage, low-power applications. The integrated Schottky diode protects the device from excessive reverse voltages and helps ensure reliable operation. The UNR411E00A works by using the NPN transistor as an active element, which converts the input signal into an output signal. The P-channel MOSFET helps control the current flow and the Schottky diode regulates the voltage to protect the device from excessive reverse biased voltages. The combination of these three components provides a versatile, high-performance BJT device.

Conclusion

The UNR411E00A is a versatile, single, pre-biased BJT integrated circuit. It offers a wide range of features, such as a pre-biased voltage, Schottky diode protection, and a variety of packages to suit a variety of applications. The UNR411E00A can be used in motor control, HVAC control, automotive audio processing, switching regulators, and other high-voltage, low-power applications. The device is designed to provide superior performance in a wide range of applications, making it an ideal solution for many of today’s demanding applications.

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