UNR411300A Discrete Semiconductor Products |
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Allicdata Part #: | UNR411300ATB-ND |
Manufacturer Part#: |
UNR411300A |
Price: | $ 0.08 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Panasonic Electronic Components |
Short Description: | TRANS PREBIAS PNP 300MW NS-B1 |
More Detail: | Pre-Biased Bipolar Transistor (BJT) PNP - Pre-Bias... |
DataSheet: | UNR411300A Datasheet/PDF |
Quantity: | 5000 |
Moisture Sensitivity Level (MSL): | 1 (Unlimited) |
Lead Free Status / RoHS Status: | Contains lead / RoHS non-compliant |
5000 +: | $ 0.07186 |
Resistor - Emitter Base (R2): | 47 kOhms |
Supplier Device Package: | NS-B1 |
Package / Case: | NS-B1 |
Mounting Type: | Through Hole |
Power - Max: | 300mW |
Frequency - Transition: | 80MHz |
Current - Collector Cutoff (Max): | 500nA |
Vce Saturation (Max) @ Ib, Ic: | 250mV @ 300µA, 10mA |
DC Current Gain (hFE) (Min) @ Ic, Vce: | 80 @ 5mA, 10V |
Series: | -- |
Resistor - Base (R1): | 47 kOhms |
Voltage - Collector Emitter Breakdown (Max): | 50V |
Current - Collector (Ic) (Max): | 100mA |
Transistor Type: | PNP - Pre-Biased |
Moisture Sensitivity Level (MSL): | -- |
Part Status: | Obsolete |
Lead Free Status / RoHS Status: | -- |
Packaging: | Tape & Box (TB) |
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UNR411300A Application Field and Working Principle
The UNR411300A is a single pre-biased bipolar transistor introduced by ON Semiconductor. It is a Surface-Mounted Device (SMD) component made in a top-viewed SOT-23 package. This transistor offers technical advantages over other single bipolar transistors due to its structure. It has a pre-bias feature, a low collector-emitter saturation voltage and a relatively low collector-emitter leakage current.
The UNR411300A has a range of applications, but it is most commonly used as a switch or buffer in low power linear circuits. It is also used in analog signal processing, such as amplifiers, multiplexers, and in audio and video applications. It is ideal for driving small loads including high frequency LEDs, incandescent bulbs, small motors, and buzzers.
Before discussing the working principle of the UNR411300A, it\'s important to consider the basics of bipolar transistors. Bipolar transistors are switching and amplification devices that have three layers of semiconductors. Each layer has its own pin connections, called the collector (C), base (B) and emitter (E). For the UNR411300A, the terminals are labeled C1, B1, and E1.
The science behind its operation is based on transporting electrons between layers. When a voltage is applied to the B1 terminal, the base-emitter junction produces a small current. This small current "controls" the flow of electrons between the C1 (collector) and E1 (emitter) terminals. This controlling action can be used to amplify an input signal or to switch an electrical current On or Off.
The advantages of the UNR411300A are attributed to its pre-biased feature, which is also referred to as common-mode feedback. This feature reduces the collector-emitter voltage when the transistor is turned off, allowing for greater efficiency and reducing power consumption. The wide voltage range, low leakage current and low saturation voltage all contribute to the device\'s performance and efficiency, as well as its ability to process signa.
The UNR411300A is the most efficient type of single bipolar transistor, which makes it ideal for low power applications. It is a robust component that offers precise control, low power consumption, and is easily integrated into circuit boards. The UNR411300A is a versatile component that is suitable for a wide range of applications, and is available in a variety of packages.
The specific data is subject to PDF, and the above content is for reference
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