UNR41160RA Discrete Semiconductor Products

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The UNR41160RA is a pre-biased, single bipolar junction transistor (BJT) which is manufactured by Unisonic Technologies. The transistor is a general-purpose device that is suitable for a wide range of applications, and is available in both surface-mount and through-hole packages. It offers low power consumption, high gain, and high frequency operation.

The UNR41160RA is a PNP type transistor, with a maximum collector-emitter voltage of 40 volts (Vce(max)). The maximum collector current is 180 milliamps (mA), and the maximum power dissipation of the device is 800 milliwatts (mW). The transistor has a minimum gain of 200, with an operating frequency range of 1 megahertz (MHz) to 10 MHz. The device has a maximum collector-base breakdown voltage of 45 V, and a maximum emitter-base breakdown voltage of 7 V.

The UNR41160RA transistor is well-suited for high-frequency, low power applications such as switching, level shifting, and amplification. It is ideal for use in high current applications, such as motor drives and audio output stages. The transistor can be used as a switch in a high frequency switching circuit, as well as a level shifter in a voltage regulator circuit. It is also useful in amplifier circuits, where it can provide gain in low-level amplifier stages. Additionally, the UNR41160RA is an ideal choice for use in Power Management Integrated Circuits (PMICs), as it has low power consumption and can provide high gain performance in low-level amplifier stages.

The UNR41160RA has an on-resistance of 30 milliohms (mW), which is relatively low for a general-purpose transistor. This makes it suitable for use in high-frequency switching applications, as low on-resistance translates to less power dissipation and faster switching speeds. Additionally, the transistor has a minimum thermal resistance of 70°C/W, making it highly suitable for use in temperature-sensitive applications.

The working principle of the UNR41160RA is relatively simple. When a current is passed through the base-emitter junction of the transistor, it generates a voltage drop across it which causes current to flow from the collector to the emitter. This current is then amplified through the transistor’s gain. This amplification of current is what makes the transistor such a versatile piece of semiconductor electronics.

The UNR41160RA is a reliable and cost-effective solution for a variety of applications. It offers low power consumption, high gain performance, and a wide operating frequency range. This makes it an excellent choice for use in high current applications, such as motor drives and audio output stages, as well as switching, level shifting, and low-level amplifier applications.

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