UNR42170RA Discrete Semiconductor Products |
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Allicdata Part #: | UNR42170RATB-ND |
Manufacturer Part#: |
UNR42170RA |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Panasonic Electronic Components |
Short Description: | TRANS PREBIAS NPN 300MW NS-B1 |
More Detail: | Pre-Biased Bipolar Transistor (BJT) NPN - Pre-Bias... |
DataSheet: | UNR42170RA Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
Series: | -- |
Packaging: | Tape & Box (TB) |
Part Status: | Obsolete |
Transistor Type: | NPN - Pre-Biased |
Current - Collector (Ic) (Max): | 100mA |
Voltage - Collector Emitter Breakdown (Max): | 50V |
Resistor - Base (R1): | 22 kOhms |
DC Current Gain (hFE) (Min) @ Ic, Vce: | 160 @ 5mA, 10V |
Vce Saturation (Max) @ Ib, Ic: | 250mV @ 300µA, 10mA |
Current - Collector Cutoff (Max): | 500nA |
Frequency - Transition: | 150MHz |
Power - Max: | 300mW |
Mounting Type: | Through Hole |
Package / Case: | NS-B1 |
Supplier Device Package: | NS-B1 |
Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us: sales@allicdata.com
The UNR42170RA is a single, pre-biased, bipolar junction transistor (BJT) integrated circuit. It is a monolithic active device, meaning that it can be integrated into a larger circuit on a printed circuit board or other substrate. The device is designed to provide protection against overvoltage, overcurrent, and reverse polarity conditions. It also provides protection against transient voltages, making it suitable for use in applications such as power supplies, medical devices, and industrial automation.
The UNR42170RA is a three-terminal device and consists of a base, an emitter, and a collector. The base is the control element and is used to control the current flow between the collector and emitter. The emitter and collector are connected to the external circuit by pins. The device is pre-biased, meaning that it is placed in a predetermined state before it is connected to the external circuit. This makes for a simpler wiring setup, as the bias resistors are already incorporated into the device and need not be individually connected.
The UNR42170RA is designed to be used as an overvoltage protection device. This means that it will shut off the circuit when the voltage in the external circuit exceeds a predetermined level. This is accomplished through the use of a Zener diode between the collector and base terminal. The Zener diode is connected in reverse-biased, meaning that it will be in an off state when the voltage is low, but when the voltage in the circuit increases beyond the set threshold, the Zener diode will conduct, allowing current to flow between the collector and base terminal. This current flow will turn on the transistor, effectively shutting off the circuit.
The UNR42170RA is also designed to provide protection against overcurrent. This is accomplished through the use of a built-in current-limiting resistor. The resistor is connected between the collector and emitter terminals and is used to limit the amount of current that can flow through the device. The device is also designed to provide protection against reverse polarity conditions, meaning that it will shut off the circuit if the power is connected with the polarity reversed.
The UNR42170RA is a versatile device and can be used in a variety of applications. It is most commonly used as an overvoltage protection device in power supplies, medical devices, industrial automation, and other applications where protection against transient voltages is important. It is also commonly used as a current-limiting device, as its built-in resistor can help to protect against overcurrent conditions. Overall, the UNR42170RA is a reliable and cost-effective solution for many applications.
The specific data is subject to PDF, and the above content is for reference
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