UNR411400A Discrete Semiconductor Products

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A UNR411400A transistor is classified as a pre-biased single bipolar junction transistor (BJT). This type of transistor is a three-terminal device with electrical characteristics, such as forward voltage drop, current gain, and breakdown voltage rating, which differs according to the type and amount of bias voltage that is applied on the device. The UNR411400A transistor is commonly used in applications, such as general purpose switching, audio amplifiers, power supplies, and transducers.

When a bias voltage is applied to the UNR411400A device, it behaves like a two-terminal rectifier, with a voltage waveform that behaves like a half-wave rectifier. The UNR411400A\'s forward voltage drop is relatively low, giving it an excellent current gain. Its breakdown voltage rating is also relatively high which helps to protect it in circuit applications.

The UNR411400A also features a high input resistance, which makes it ideal for applications where the control signal does not need to be amplifying. Additionally, its low leak current makes it suitable for applications in which current should not flow through the device when it is not in use.

The UNR411400A device has a maximum collector-emitter breakdown voltage of 15 volts and a power dissipation rating of 500 mW. It is also capable of operating at temperatures from -55 to +150 degrees C and at storage temperatures from -55 to +175 degrees C. In addition, it has reverse breakdown voltage of 5 volts and reverse leakage current of 5 mA.

The working principle of the UNR411400A transistor is very simple. When the gate voltage is applied, the positive drain current is able to flow through the device. This current is then amplified and the output is proportional to the amount of current flowing through the device. This relationship between the current and the output voltage is known as the current gain. The UNR411400A has a current gain of between 150 and 200.

The UNR411400A device is often used in power supplies and switching applications, due to its high current gain and low input resistance. In addition, it can also be used in transducers, such as piezoelectric transducers and microphones. It can also be used in audio amplifiers and other audio applications. In all these applications, the UNR411400A provides a reliable and consistent performance.

In conclusion, the UNR411400A is a pre-biased single bipolar junction transistor (BJT). It is commonly used in applications, such as switching, audio amplifiers, power supplies, and transducers. It has a maximum collector-emitter breakdown voltage of 15 volts and a power dissipation rating of 500 mW. In addition, it has a current gain of between 150 and 200 and an input resistance of the UNR411400A is relatively high. This allows it to be used in various applications where current should not be amplified, and its low leakage current makes it suitable for applications in which current should not flow through the device when it is not in use.

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