UNR411200A Discrete Semiconductor Products |
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Allicdata Part #: | UNR411200ATB-ND |
Manufacturer Part#: |
UNR411200A |
Price: | $ 0.08 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Panasonic Electronic Components |
Short Description: | TRANS PREBIAS PNP 300MW NS-B1 |
More Detail: | Pre-Biased Bipolar Transistor (BJT) PNP - Pre-Bias... |
DataSheet: | UNR411200A Datasheet/PDF |
Quantity: | 5000 |
Moisture Sensitivity Level (MSL): | 1 (Unlimited) |
Lead Free Status / RoHS Status: | Contains lead / RoHS non-compliant |
5000 +: | $ 0.07186 |
Resistor - Emitter Base (R2): | 22 kOhms |
Supplier Device Package: | NS-B1 |
Package / Case: | NS-B1 |
Mounting Type: | Through Hole |
Power - Max: | 300mW |
Frequency - Transition: | 80MHz |
Current - Collector Cutoff (Max): | 500nA |
Vce Saturation (Max) @ Ib, Ic: | 250mV @ 300µA, 10mA |
DC Current Gain (hFE) (Min) @ Ic, Vce: | 60 @ 5mA, 10V |
Series: | -- |
Resistor - Base (R1): | 22 kOhms |
Voltage - Collector Emitter Breakdown (Max): | 50V |
Current - Collector (Ic) (Max): | 100mA |
Transistor Type: | PNP - Pre-Biased |
Moisture Sensitivity Level (MSL): | -- |
Part Status: | Obsolete |
Lead Free Status / RoHS Status: | -- |
Packaging: | Tape & Box (TB) |
Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us: sales@allicdata.com
The UNR411200A is a single pre-biased bipolar junction transistor (BJT). It is an industrial component used in a variety of applications and operates on a basic working principle. In this article, we’ll take a closer look at the UNR411200A’s application field and working principle.
When it comes to application fields, the UNR411200A is highly flexible. It can be used to control load circuits, amplify signals, and provide switching functionality. As well, it can be used in a variety of different industrial settings: automotive, aerospace, telecommunications, and more.
The UNR411200A is based on a simple yet effective working principle. It is composed of three layers of semi-conducting material. Two of these layers are "base" layers, which are separated by a third, "emitter" layer. When a current is applied to the base layers, it creates a "voltage potential," which causes electrons to flow from the emitter layer to the base layers. This produces a current between the base layers and the emitter layer, which can then be harnessed and used to control a variety of circuits and systems.
The UNR411200A is well-suited to a variety of applications. Its pre-biased construction makes it easy to use in both basic and advanced circuits, and its rugged design provides reliable performance and durability. In addition, its high-precision construction reduces the need for external components and ensures greater accuracy in application fields.
The UNR411200A is an industrially used component that offers an effective yet simple working principle. Its flexibility and reliable performance make it a preferred choice for a variety of application fields, from automotive to aerospace. Its pre-biased construction ensures ease of use, and its high-precision design ensures accurate and reliable performance.
The specific data is subject to PDF, and the above content is for reference
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