UNR42160RA Discrete Semiconductor Products |
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Allicdata Part #: | UNR42160RATB-ND |
Manufacturer Part#: |
UNR42160RA |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Panasonic Electronic Components |
Short Description: | TRANS PREBIAS NPN 300MW NS-B1 |
More Detail: | Pre-Biased Bipolar Transistor (BJT) NPN - Pre-Bias... |
DataSheet: | UNR42160RA Datasheet/PDF |
Quantity: | 1000 |
Moisture Sensitivity Level (MSL): | 1 (Unlimited) |
Lead Free Status / RoHS Status: | Lead free / RoHS Compliant |
1 +: | 0.00000 |
Resistor - Base (R1): | 4.7 kOhms |
Supplier Device Package: | NS-B1 |
Package / Case: | NS-B1 |
Mounting Type: | Through Hole |
Power - Max: | 300mW |
Frequency - Transition: | 150MHz |
Current - Collector Cutoff (Max): | 500nA |
Vce Saturation (Max) @ Ib, Ic: | 250mV @ 300µA, 10mA |
DC Current Gain (hFE) (Min) @ Ic, Vce: | 160 @ 5mA, 10V |
Series: | -- |
Voltage - Collector Emitter Breakdown (Max): | 50V |
Current - Collector (Ic) (Max): | 100mA |
Transistor Type: | NPN - Pre-Biased |
Moisture Sensitivity Level (MSL): | -- |
Part Status: | Obsolete |
Lead Free Status / RoHS Status: | -- |
Packaging: | Tape & Box (TB) |
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The UNR42160RA is a single, pre-biased bipolar transistor (BJT) designed to be used in a variety of applications. This type of BJT is commonly used in switching and amplifier circuits where a high input current and an amplified output are required. The UNR42160RA is capable of handling up to 10A of continuous current, making it suitable for driving large, high power circuits.
The UNR42160RA is composed of two main semiconductor layers, emitter and collector, which are separated by a silicon dioxide layer. This design allows for efficient, high-speed switching, as well as implementing various levels of gain and current output. This makes the UNR42160RA well suited for applications such as HVAC control circuits, audio amplifiers, motor control relays, and air-conditioning systems.
The working principle of the UNR42160RA is based on a field effect transistor (FET). When a voltage is applied to the gate of the BJT, an electric field is created that switches on and off in response to the input voltage. This field is then transferred to the base and emitter of the transistor. When the voltage at the gate increases, the emitter voltage increases and the entire system is turned on. Similarly, when the gate voltage decreases, the emitter voltage decreases and the entire system is turned off.
The UNR42160RA can be used in a variety of applications where a pre-biased, high-speed transistor is required. The BJT is suitable for driving large, high power circuits with up to 10A of current. The UNR42160RA is also capable of providing high input current and an amplified output, making it ideal for switching and amplifier circuits. Moreover, the design of the UNR42160RA is based on a FET, allowing for efficient, high-speed switching with various levels of gain and current output.
The UNR42160RA is an ideal solution for a variety of applications, from HVAC control circuits to motor control relays, and air-conditioning systems. The BJT is suitable for driving large, high power circuits with up to 10A of continuous current, while providing high input current and an amplified output, making it perfect for switching and amplifier circuits. The UNR42160RA is a reliable, pre-biased BJT with high-speed switching, efficient gain, and current output capabilities.
The specific data is subject to PDF, and the above content is for reference
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