UNR422400A Discrete Semiconductor Products |
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Allicdata Part #: | UNR422400ATB-ND |
Manufacturer Part#: |
UNR422400A |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Panasonic Electronic Components |
Short Description: | TRANS PREBIAS NPN 300MW NS-B1 |
More Detail: | Pre-Biased Bipolar Transistor (BJT) NPN - Pre-Bias... |
DataSheet: | UNR422400A Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
Series: | -- |
Packaging: | Tape & Reel (TR) |
Part Status: | Obsolete |
Transistor Type: | NPN - Pre-Biased |
Current - Collector (Ic) (Max): | 500mA |
Voltage - Collector Emitter Breakdown (Max): | 50V |
Resistor - Base (R1): | 2.2 kOhms |
Resistor - Emitter Base (R2): | 10 kOhms |
DC Current Gain (hFE) (Min) @ Ic, Vce: | 60 @ 100mA, 10V |
Vce Saturation (Max) @ Ib, Ic: | 250mV @ 5mA, 100mA |
Current - Collector Cutoff (Max): | 1µA |
Frequency - Transition: | 200MHz |
Power - Max: | 300mW |
Mounting Type: | Through Hole |
Package / Case: | NS-B1 |
Supplier Device Package: | NS-B1 |
Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us: sales@allicdata.com
UNR422400A is a single, pre-biased, bipolar junction transistor (BJT) designed for use in high current switching applications. The device has been specifically designed for applications with high current density and low on-resistance. UNR422400A is suitable for use in switching applications up to 1.25A.
The UNR422400A features a pre-bias feature, which reduces the switching time by pre-biasing the device before the start of the switching cycle. This pre-bias feature avoids the need to start the switching cycle from zero volt and minimizes the switching time. The device also provides a low saturation voltage, allowing for higher efficiency during the switching cycle.
UNR422400A has a robust structure which enables it to withstand high voltage and temperature fluctuations. Its construction also provides excellent thermal dissipation, allowing it to operate at high temperature and current levels without affecting its performance.
The working principle of the UNR422400A is based on the usage of three diodes in a bridge configuration. The first diode is used to provide a bias voltage, while the second and third diodes form the very small on-resistance in the device. This helps to switch the device on and off in a very fast manner. The small on-resistance and the low-power consumption of the UNR422400A make it suitable for portable and mobile applications.
The UNR422400A is suitable for use in various applications such as LED lighting, motor control, and automotive electronics. In LED lighting applications, the device is used for high-efficiency and low-power dissipation when being used for light dimming. Due to its low on-resistance, the UNR422400A is ideal for use in motor-control applications, as it allows for accurate speed control. Additionally, it can be used in automotive electronics to provide accurate detection and control of devices such as rotary encoders and linear actuators.
The UNR422400A is a robust and reliable single, pre-biased BJT developed for use in high current switching applications. With its pre-bias feature, low on-resistance, low saturation voltage, and robust structure, it can provide a reliable switching connection in a variety of scenarios. Additionally, its low power dissipation and low energy consumption make it ideal for use in portable and mobile applications.
The specific data is subject to PDF, and the above content is for reference
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