UNR421300A Discrete Semiconductor Products |
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Allicdata Part #: | UNR421300ATB-ND |
Manufacturer Part#: |
UNR421300A |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Panasonic Electronic Components |
Short Description: | TRANS PREBIAS NPN 300MW NS-B1 |
More Detail: | Pre-Biased Bipolar Transistor (BJT) NPN - Pre-Bias... |
DataSheet: | UNR421300A Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
Series: | -- |
Packaging: | Tape & Reel (TR) |
Part Status: | Obsolete |
Transistor Type: | NPN - Pre-Biased |
Current - Collector (Ic) (Max): | 100mA |
Voltage - Collector Emitter Breakdown (Max): | 50V |
Resistor - Base (R1): | 47 kOhms |
Resistor - Emitter Base (R2): | 47 kOhms |
DC Current Gain (hFE) (Min) @ Ic, Vce: | 80 @ 5mA, 10V |
Vce Saturation (Max) @ Ib, Ic: | 250mV @ 300µA, 10mA |
Current - Collector Cutoff (Max): | 500nA |
Frequency - Transition: | 150MHz |
Power - Max: | 300mW |
Mounting Type: | Through Hole |
Package / Case: | NS-B1 |
Supplier Device Package: | NS-B1 |
Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us: sales@allicdata.com
UNR421300A is a single, pre-biased bipolar junction transistor (BJT) that combines various features that make it an ideal device for a multitude of applications. It has an outstanding noise figure, offers industry-leading forward and reverse transfer characteristics, a high current gain, and low collector-emitter saturation voltage. Its high breakdown voltage also makes it excellent for use in applications that can require higher voltages.
The UNR421300A\'s pre-biased design enables the device to work in circuits with marginal DC bias. The device offers the ideal combination of low-power and low-noise operations, allowing its use in a range of applications. Moreover, its excellent thermal performance supports applications requiring extended life with minimal power dissipation.
In operation, the UNR421300A has two pairs of base-emitter and collector-emitter diodes, which provide the ability to both modulate and adjust the polarity of the forward and reverse currents. Current gain is determined by the ratio of the collector current to the base current, with the transistor typically operating in one of three modes: common-emitter (CE), common-base (CB), or common-collector (CC). In practical applications, the device is usually used to amplify electrical signals and to perform switching operations. The device also offers a low noise figure, as well as a wide frequency response, making it suitable for use in many different types of communication systems.
The UNR421300A is also widely used in power conversion and control applications. It can be used to regulate the voltage at the output of a DC power supply, allowing the user to accurately control the output voltage or current. The device is also an ideal choice for use in pulse-width modulation (PWM) circuits, used to control the speed of electric motors, adjustable speed drives, brushless DC motors and other power sources. Additionally, its high current gain, low collector-emitter saturation voltage, and low power dissipation make it a great device for use in applications such as low-dropout (LDO) voltage regulators and DC-DC converters.
Overall, the UNR421300A is an ideal solution for a broad array of demanding applications requiring high current gain, low noise, low power dissipation, and high breakdown voltage. The device offers excellent thermal performance and pre-bias features, allowing it to meet the demands of even the most demanding applications. Whether being used for amplifying electrical signals, controlling the output voltage or current in a power supply, or being used in a motion control or communications circuit, the UNR421300A is a reliable and efficient device for all types of applications.
The specific data is subject to PDF, and the above content is for reference
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