UNR91A2G0L Discrete Semiconductor Products

Series:	--
Packaging:	Tape & Reel (TR)
Part Status:	Obsolete
Transistor Type:	PNP - Pre-Biased
Current - Collector (Ic) (Max):	80mA
Voltage - Collector Emitter Breakdown (Max):	50V
Resistor - Base (R1):	22 kOhms
Resistor - Emitter Base (R2):	22 kOhms
DC Current Gain (hFE) (Min) @ Ic, Vce:	60 @ 5mA, 10V
Vce Saturation (Max) @ Ib, Ic:	250mV @ 300µA, 10mA
Current - Collector Cutoff (Max):	500nA
Frequency - Transition:	80MHz
Power - Max:	125mW
Mounting Type:	Surface Mount
Package / Case:	SC-89, SOT-490
Supplier Device Package:	SSMini3-F3

Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us:   sales@allicdata.com

Introduction

The UNR91A2G0L is a single, pre-biased, bipolar (BJT) transistor. It is a commonly used discrete device commonly used in electronics. This article will provide an overview of the application field and working principle of the UNR91A2G0L.

Application Field

The UNR91A2G0L is most commonly used as an amplifier and switching device. It can be used for a variety of applications, such as radio and telecom applications, analog amplification, and current sensing. Due to its robustness, it is well suited for high-temperature applications and can be used in automotive and industrial applications. The UNR91A2G0L is also used in power conversion and control applications, as well as motor drive applications. Due to its high-power rating and high-emitter saturation voltage, it can be used as a high-side or low-side switch. Furthermore, its low on-resistance and low capacitance allow it to be used in high-frequency circuits. Finally, the UNR91A2G0L can also be used in interface and logic applications, such as magnetic field sensing. It is also used as part of level-shifting and voltage buffer circuits.

Working Principle

The UNR91A2G0L functions as an amplifier and switching device. It operates as an NPN bipolar transistor. It consists of three terminals: a base, an emitter, and a collector. The base terminal is used to control the current flow, as the current flow between the emitter and collector is proportional to the current flow into the base. The current flow is controlled by applying a voltage to the base, allowing for amplification and switching of the current. The emitter-collector voltage, VCE, is the voltage between the emitter and collector terminals. This voltage is typically 1.25V. The emitter-base voltage, VEB, is the voltage between the emitter and base terminals. The base-emitter voltage, VBE, is usually between 0.3V and 0.7V. The UNR91A2G0L also has an associated thermal resistance, β. This is the ratio of the collector current, IC to the base current, IB. This parameter determines the amount of current that can pass through the transistor before the transistor heats up too much.

Conclusion

In conclusion, the UNR91A2G0L is a single, pre-biased, bipolar (BJT) transistor that is commonly used as a switching and amplification device in a variety of applications. Its three terminals control current flow, and it has an associated thermal resistance, β. It is well suited for high-temperature applications, and can be used in a variety of circuits, both high-frequency and logic.

The specific data is subject to PDF, and the above content is for reference

Part Number	Manufacturer	Price	Quantity	Description