UNR92A9G0L Discrete Semiconductor Products

Series:	--
Packaging:	Tape & Reel (TR)
Part Status:	Obsolete
Transistor Type:	NPN - Pre-Biased
Current - Collector (Ic) (Max):	80mA
Voltage - Collector Emitter Breakdown (Max):	50V
Resistor - Base (R1):	1 kOhms
Resistor - Emitter Base (R2):	10 kOhms
DC Current Gain (hFE) (Min) @ Ic, Vce:	30 @ 5mA, 10V
Vce Saturation (Max) @ Ib, Ic:	250mV @ 300µA, 10mA
Current - Collector Cutoff (Max):	500nA
Frequency - Transition:	150MHz
Power - Max:	125mW
Mounting Type:	Surface Mount
Package / Case:	SC-89, SOT-490
Supplier Device Package:	SSMini3-F3

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**UNR92A9G0L Application Field and Working Principle** Transistors are among the most important and widely used components in electrical circuits and form the basis for much of modern electronics. Specifically, bipolar junction transistors (BJT) are used for a wide range of switching and amplification applications and are a key element in the design of many types of electronic circuits. One type of BJT is the UNR92A9G0L., commonly known as the single, pre-biased transistor. This article will discuss the application field and working principle of the UNR92A9G0L. The UNR92A9G0L is a single-channel, NPN pre-biased transistor that offers high switching performance and low power consumption. This type of transistor is designed for applications where high switching speeds are desired and/or low power consumption is needed. Typical applications for the UNR92A9G0L include switching modulators, signal amplifiers, audio and video devices, and automotive applications. The UNR92A9G0L comprises three terminals – the emitter, base and collector. In operation, the base and collector are reverse-biased and the emitter is forward-biased. Under this configuration, current flows from the emitter to the collector, resulting in a change in base-collector voltage, thus causing amplification (gain). The UNR92A9G0L is a current-controlled device, meaning that its gain (or amount of amplification) is dependent on the amount of current flowing through it. As the current is increased, the gain of the transistor will increase accordingly. The amount of current also affects the gain-bandwidth product of the transistor, which describes the frequency range in which the transistor is able to amplify signals. The UNR92A9G0L is a good choice for applications which require low power consumption, high switching speeds and fast settling time. The UNR92A9G0L is relatively easy to handle and use, particularly in comparison with other transistors, as it is pre-biased, thus eliminating the need to manually adjust base-collector voltages. Moreover, it is a low-cost solution, making it attractive for a variety of circuits.In summary, the UNR92A9G0L is a single-channel, NPN pre-biased transistor with a number of advantages compared to other transistor types. It offers excellent switching performance and low power consumption, making it suitable for a variety of applications. Furthermore, the UNR92A9G0L is a low-cost option, with no need for manual adjustment of base-collector voltages, thus making it particularly easy to use.

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