UNR911MJ0L Allicdata Electronics

UNR911MJ0L Discrete Semiconductor Products

Allicdata Part #:

UNR911MJ0LTR-ND

Manufacturer Part#:

UNR911MJ0L

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: Panasonic Electronic Components
Short Description: TRANS PREBIAS PNP 125MW SSMINI3
More Detail: Pre-Biased Bipolar Transistor (BJT) PNP - Pre-Bias...
DataSheet: UNR911MJ0L datasheetUNR911MJ0L Datasheet/PDF
Quantity: 1000
Stock 1000Can Ship Immediately
Specifications
Series: --
Packaging: Tape & Reel (TR) 
Part Status: Obsolete
Transistor Type: PNP - Pre-Biased
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Resistor - Base (R1): 2.2 kOhms
Resistor - Emitter Base (R2): 47 kOhms
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 5mA, 10V
Vce Saturation (Max) @ Ib, Ic: 250mV @ 300µA, 10mA
Current - Collector Cutoff (Max): 500nA
Frequency - Transition: 80MHz
Power - Max: 125mW
Mounting Type: Surface Mount
Package / Case: SC-89, SOT-490
Supplier Device Package: SSMini3-F1
Description

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The UNR911MJ0L is a pre-biased single transistor of the bipolar junction type (BJT). Bipolar transistors generally consist of two PN junctions shaped to form a three-terminal semiconductor device. They are one of the oldest and most widely used types of transistor. This model is ideal for a wide range of applications, such as amplifiers, switching, multiplexers, and interfaces.

Application Field

The UNR911MJ0L is used for general-purpose switching and amplifying applications. It can be used to drive a large current from a low-power source, making it an ideal choice for power applications. It is also suitable for use in radio-frequency circuits and computer-control circuits, as well as for audio frequency applications. The device can be operated in any of the three possible polarities, with its input and output voltages either positive or negative.

Working Principle

A bipolar junction transistor (BJT) works by using the flow of electrons between two PN junctions. By applying voltage to the Collector-Base (CB) junction, electrons can be made to flow from the Collector to the Base of the transistor. This flow of electrons can be used to either switch an electrical circuit on or off, or to amplify a signal.

BJTs also have voltage gain, meaning that they can be used to increase the voltage of an input signal above the applied DC voltage. The amount of voltage gain depends on the configuration of the circuit and the current supplied by the base.

The UNR911MJ0L has a maximum power dissipation of 2.5W, a maximum junction temperature of 150°C, and a transistor type of NPN. It is also very reliable, making it a great choice for use in applications that require stability.

Conclusion

In summary, the UNR911MJ0L single pre-biased transistor is an ideal choice for a wide range of applications, such as amplifiers, switches, multiplexers and interfaces. Its NPN transistor configuration and excellent reliability make it an excellent choice for increasing voltage of an input signal or driving a large current from a low-power source.

The specific data is subject to PDF, and the above content is for reference

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