UNR911AJ0L Discrete Semiconductor Products |
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Allicdata Part #: | UNR911AJ0LTR-ND |
Manufacturer Part#: |
UNR911AJ0L |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Panasonic Electronic Components |
Short Description: | TRANS PREBIAS PNP 125MW SSMINI3 |
More Detail: | Pre-Biased Bipolar Transistor (BJT) PNP - Pre-Bias... |
DataSheet: | UNR911AJ0L Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
Series: | -- |
Packaging: | Tape & Reel (TR) |
Part Status: | Obsolete |
Transistor Type: | PNP - Pre-Biased |
Current - Collector (Ic) (Max): | 100mA |
Voltage - Collector Emitter Breakdown (Max): | 50V |
Resistor - Base (R1): | 100 kOhms |
Resistor - Emitter Base (R2): | 100 kOhms |
DC Current Gain (hFE) (Min) @ Ic, Vce: | 80 @ 5mA, 10V |
Vce Saturation (Max) @ Ib, Ic: | 250mV @ 300µA, 10mA |
Current - Collector Cutoff (Max): | 500nA |
Frequency - Transition: | 80MHz |
Power - Max: | 125mW |
Mounting Type: | Surface Mount |
Package / Case: | SC-89, SOT-490 |
Supplier Device Package: | SSMini3-F1 |
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A UNR911AJ0L is a type of bipolar transistor, commonly referred to as a BJT or junction transistor. It is a pre-biased single-stage device and its main application is in the field of general audio, medium power oscillator and switching circuits.
This type of transistor operates differently than n-channel or p-channel field-effect transistors (FETs), which pass or block electric current based on the inputs to their terminals. BJTs utilize the interaction of two semiconductor junctions to pass current through the device. This allows for more complex circuit designs for audio applications, for example.
Within the UNR911AJ0L, the two junctions are arranged in a way that allows a current traveling from the collector to the emitter to become freely available, while current from the emitter to collector is blocked until it is allowed to pass by a separate transistor. Such a circuit is known as a pre-biased circuit, and it is a key feature of the UNR911AJ0L transistor.
To understand the workings of the UNR911AJ0L, it is important to first understand the basic electrical properties of the transistor. This type of device is composed of three terminals: the collector, the emitter, and the base. The collector and emitter are connected by a semiconductor material, while the base is a separate material which acts like a gate to the collector-emitter path.
When an electric current from the base is introduced to the transistor, the transistor’s collector-emitter path opens and current flows from the collector to the emitter. This is known as the forward biased state, and it is the state in which most transistors are used.
When the current from the base is removed, the transistor will generally remain in the forward biased state due to a phenomenon called junction capacitance. This phenomenon is a key aspect of the operation of the UNR911AJ0L, as it allows the device to be pre-biased and ready to accept signals with minimal current or voltage input.
In addition, the UNR911AJ0L features a dielectric isolation and temperature compensation structure that increases the device’s stability and allows it to operate in a wider range of temperatures. This is important for applications such as speaker systems and consumer audio, where long-term reliability and performance are essential.
The UNR911AJ0L is an ideal device for applications requiring general audio, medium power oscillator, and switching circuits. Its pre-biased structure and temperature compensation structure make it well-suited for high-reliability, long-term applications in consumer electronics and other such areas. With its excellent performance and reliability, this type of transistor is sure to remain a popular choice for a wide variety of applications.
The specific data is subject to PDF, and the above content is for reference
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