UNR911DJ0L Discrete Semiconductor Products |
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Allicdata Part #: | UNR911DJ0LTR-ND |
Manufacturer Part#: |
UNR911DJ0L |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Panasonic Electronic Components |
Short Description: | TRANS PREBIAS PNP 125MW SSMINI3 |
More Detail: | Pre-Biased Bipolar Transistor (BJT) PNP - Pre-Bias... |
DataSheet: | UNR911DJ0L Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
Series: | -- |
Packaging: | Tape & Reel (TR) |
Part Status: | Obsolete |
Transistor Type: | PNP - Pre-Biased |
Current - Collector (Ic) (Max): | 100mA |
Voltage - Collector Emitter Breakdown (Max): | 50V |
Resistor - Base (R1): | 47 kOhms |
Resistor - Emitter Base (R2): | 10 kOhms |
DC Current Gain (hFE) (Min) @ Ic, Vce: | 30 @ 5mA, 10V |
Vce Saturation (Max) @ Ib, Ic: | 250mV @ 300µA, 10mA |
Current - Collector Cutoff (Max): | 500nA |
Frequency - Transition: | 80MHz |
Power - Max: | 125mW |
Mounting Type: | Surface Mount |
Package / Case: | SC-89, SOT-490 |
Supplier Device Package: | SSMini3-F1 |
Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us: sales@allicdata.com
Bipolar Junction Transistors (BJT) have become a staple in all electronic device designs, ranging from basic amplifiers and logic gates to complex CPU circuits.UNR911DJ0L is a type of BJT and is commonly used as a pre-biased, single transistor. This type of BJT is advantageous in that it can provide higher gain, higher power, and better performance than any other bipolar transistor, making them ideal for applications requiring higher gain, power, and/or performance.
In terms of its applications, the UNR911DJ0L is mainly used as a signal amplifier, providing a high-gain output to increase signal strength. This type of BJT can also be used for other applications, including converting signal levels for signal isolation, generating levels for switching circuits, providing amplification for analog and digital signals, and providing bias levels for the operation of other transistors. The UNR911DJ0L is also often used in low level signal processing, as well as in low power circuits which require low current.
The primary benefit of using the UNR911DJ0L BJT is its extremely low operating current. It offers excellent performance with very low currents, making it an ideal choice for low power applications. This type of transistor also provides excellent frequency response, with high-gain outputs, making it suitable for amplifiers and signal processing applications. Its low distortion characteristics further make this BJT the ideal choice for applications where a clean signal is required.
In terms of its working principle, the UNR911DJ0L is a pre-biased single transistor. It has three regions: the emitter, collector, and base. The emitter is the source of electrons, the collector is the drain where the electrons are collected, and the base is the region which controls the flow of electrons from the emitter to the collector. The current flow from the emitter to the collector is controlled by the forward bias present between the base and the collector. When a negative voltage is applied to the base, the transistor spreads, reducing the current flow from the emitter to the collector and therefore reducing the gain. Conversely, when a positive voltage is applied to the base, the transistor contracts, increasing the current flow from the emitter to the collector and therefore increasing the gain.
The UNR911DJ0L is a useful transistor primarily due to its low power requirement and high performance. Its low bias allows for excellent performance with minimal current draw, making it ideal for applications which require high gain and low power. Its high frequency response also makes it suitable for use in amplifiers and signal processing applications. And its low distortion characteristics make it ideal for applications requiring a clean signal.
The specific data is subject to PDF, and the above content is for reference
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