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Search Result:120 ohm resistor

 --2997 Item(s) In Category:Transistors - Bipolar (BJT) - Single, Pre-Biased

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Photo Allicdata Part# Mft.Part# Company Spec. QTY. Pricing(USD) PDF
RN2107CT(TPL3) RN2107CT(TPL3)T
R-ND		 RN2107CT(TPL3) Toshiba Semiconductor and Storage
View more  Packaging: Tape & Reel (TR)
 Part Status: Obsolete
 Transistor Type: PNP - Pre-Biased
 Current - Collector (Ic) (Max): 50mA
 Voltage - Collector Emitter Breakdown (Max): 20V
 Resistor - Base (R1): 10 kOhms
 Resistor - Emitter Base (R2): 47 kOhms
 DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 10mA, 5V
 Vce Saturation (Max) @ Ib, Ic: 150mV @ 250A, 5mA
 Current - Collector Cutoff (Max): 500nA
 Power - Max: 50mW
 Mounting Type: Surface Mount
 Package / Case: SC-101, SOT-883
 Supplier Device Package: CST3
1000
Order

1+:

$0

 RN2107CT(TPL3)TR-ND Datasheet
RN2108CT(TPL3) RN2108CT(TPL3)T
R-ND		 RN2108CT(TPL3) Toshiba Semiconductor and Storage
View more  Packaging: Tape & Reel (TR)
 Part Status: Obsolete
 Transistor Type: PNP - Pre-Biased
 Current - Collector (Ic) (Max): 50mA
 Voltage - Collector Emitter Breakdown (Max): 20V
 Resistor - Base (R1): 22 kOhms
 Resistor - Emitter Base (R2): 47 kOhms
 DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 10mA, 5V
 Vce Saturation (Max) @ Ib, Ic: 150mV @ 250A, 5mA
 Current - Collector Cutoff (Max): 500nA
 Power - Max: 50mW
 Mounting Type: Surface Mount
 Package / Case: SC-101, SOT-883
 Supplier Device Package: CST3
1000
Order

1+:

$0

 RN2108CT(TPL3)TR-ND Datasheet
RN1106CT(TPL3) RN1106CT(TPL3)T
R-ND		 RN1106CT(TPL3) Toshiba Semiconductor and Storage
View more  Packaging: Tape & Reel (TR)
 Part Status: Obsolete
 Transistor Type: NPN - Pre-Biased
 Current - Collector (Ic) (Max): 50mA
 Voltage - Collector Emitter Breakdown (Max): 20V
 Resistor - Base (R1): 4.7 kOhms
 Resistor - Emitter Base (R2): 47 kOhms
 DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 10mA, 5V
 Vce Saturation (Max) @ Ib, Ic: 150mV @ 250A, 5mA
 Current - Collector Cutoff (Max): 500nA
 Power - Max: 50mW
 Mounting Type: Surface Mount
 Package / Case: SC-101, SOT-883
 Supplier Device Package: CST3
1000
Order

1+:

$0

 RN1106CT(TPL3)TR-ND Datasheet
RN1104CT(TPL3) RN1104CT(TPL3)T
R-ND		 RN1104CT(TPL3) Toshiba Semiconductor and Storage
View more  Packaging: Tape & Reel (TR)
 Part Status: Obsolete
 Transistor Type: NPN - Pre-Biased
 Current - Collector (Ic) (Max): 50mA
 Voltage - Collector Emitter Breakdown (Max): 20V
 Resistor - Base (R1): 47 kOhms
 Resistor - Emitter Base (R2): 47 kOhms
 DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 10mA, 5V
 Vce Saturation (Max) @ Ib, Ic: 150mV @ 250A, 5mA
 Current - Collector Cutoff (Max): 500nA
 Power - Max: 50mW
 Mounting Type: Surface Mount
 Package / Case: SC-101, SOT-883
 Supplier Device Package: CST3
1000
Order

1+:

$0

 RN1104CT(TPL3)TR-ND Datasheet
RN1108CT(TPL3) RN1108CT(TPL3)T
R-ND		 RN1108CT(TPL3) Toshiba Semiconductor and Storage
View more  Packaging: Tape & Reel (TR)
 Part Status: Obsolete
 Transistor Type: NPN - Pre-Biased
 Current - Collector (Ic) (Max): 50mA
 Voltage - Collector Emitter Breakdown (Max): 20V
 Resistor - Base (R1): 22 kOhms
 Resistor - Emitter Base (R2): 47 kOhms
 DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 10mA, 5V
 Vce Saturation (Max) @ Ib, Ic: 150mV @ 250A, 5mA
 Current - Collector Cutoff (Max): 500nA
 Power - Max: 50mW
 Mounting Type: Surface Mount
 Package / Case: SC-101, SOT-883
 Supplier Device Package: CST3
1000
Order

1+:

$0

 RN1108CT(TPL3)TR-ND Datasheet
RN1105CT(TPL3) RN1105CT(TPL3)T
R-ND		 RN1105CT(TPL3) Toshiba Semiconductor and Storage
View more  Packaging: Tape & Reel (TR)
 Part Status: Obsolete
 Transistor Type: NPN - Pre-Biased
 Current - Collector (Ic) (Max): 50mA
 Voltage - Collector Emitter Breakdown (Max): 20V
 Resistor - Base (R1): 2.2 kOhms
 Resistor - Emitter Base (R2): 47 kOhms
 DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 10mA, 5V
 Vce Saturation (Max) @ Ib, Ic: 150mV @ 250A, 5mA
 Current - Collector Cutoff (Max): 500nA
 Power - Max: 50mW
 Mounting Type: Surface Mount
 Package / Case: SC-101, SOT-883
 Supplier Device Package: CST3
1000
Order

1+:

$0

 RN1105CT(TPL3)TR-ND Datasheet
RN2105CT(TPL3) RN2105CT(TPL3)T
R-ND		 RN2105CT(TPL3) Toshiba Semiconductor and Storage
View more  Packaging: Tape & Reel (TR)
 Part Status: Obsolete
 Transistor Type: PNP - Pre-Biased
 Current - Collector (Ic) (Max): 50mA
 Voltage - Collector Emitter Breakdown (Max): 20V
 Resistor - Base (R1): 2.2 kOhms
 Resistor - Emitter Base (R2): 47 kOhms
 DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 10mA, 5V
 Vce Saturation (Max) @ Ib, Ic: 150mV @ 250A, 5mA
 Current - Collector Cutoff (Max): 500nA
 Power - Max: 50mW
 Mounting Type: Surface Mount
 Package / Case: SC-101, SOT-883
 Supplier Device Package: CST3
1000
Order

1+:

$0

 RN2105CT(TPL3)TR-ND Datasheet
RN2106CT(TPL3) RN2106CT(TPL3)T
R-ND		 RN2106CT(TPL3) Toshiba Semiconductor and Storage
View more  Packaging: Tape & Reel (TR)
 Part Status: Obsolete
 Transistor Type: PNP - Pre-Biased
 Current - Collector (Ic) (Max): 50mA
 Voltage - Collector Emitter Breakdown (Max): 20V
 Resistor - Base (R1): 4.7 kOhms
 Resistor - Emitter Base (R2): 47 kOhms
 DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 10mA, 5V
 Vce Saturation (Max) @ Ib, Ic: 150mV @ 250A, 5mA
 Current - Collector Cutoff (Max): 500nA
 Power - Max: 50mW
 Mounting Type: Surface Mount
 Package / Case: SC-101, SOT-883
 Supplier Device Package: CST3
1000
Order

1+:

$0

 RN2106CT(TPL3)TR-ND Datasheet
RN1107CT(TPL3) RN1107CT(TPL3)T
R-ND		 RN1107CT(TPL3) Toshiba Semiconductor and Storage
View more  Packaging: Tape & Reel (TR)
 Part Status: Obsolete
 Transistor Type: NPN - Pre-Biased
 Current - Collector (Ic) (Max): 50mA
 Voltage - Collector Emitter Breakdown (Max): 20V
 Resistor - Base (R1): 10 kOhms
 Resistor - Emitter Base (R2): 47 kOhms
 DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 10mA, 5V
 Vce Saturation (Max) @ Ib, Ic: 150mV @ 250A, 5mA
 Current - Collector Cutoff (Max): 500nA
 Power - Max: 50mW
 Mounting Type: Surface Mount
 Package / Case: SC-101, SOT-883
 Supplier Device Package: CST3
1000
Order

1+:

$0

 RN1107CT(TPL3)TR-ND Datasheet
RN2104CT(TPL3) RN2104CT(TPL3)T
R-ND		 RN2104CT(TPL3) Toshiba Semiconductor and Storage
View more  Packaging: Tape & Reel (TR)
 Part Status: Obsolete
 Transistor Type: PNP - Pre-Biased
 Current - Collector (Ic) (Max): 50mA
 Voltage - Collector Emitter Breakdown (Max): 20V
 Resistor - Base (R1): 47 kOhms
 Resistor - Emitter Base (R2): 47 kOhms
 DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 10mA, 5V
 Vce Saturation (Max) @ Ib, Ic: 150mV @ 250A, 5mA
 Current - Collector Cutoff (Max): 500nA
 Power - Max: 50mW
 Mounting Type: Surface Mount
 Package / Case: SC-101, SOT-883
 Supplier Device Package: CST3
1000
Order

1+:

$0

 RN2104CT(TPL3)TR-ND Datasheet
RN1119MFV,L3F RN1119MFVL3F-ND RN1119MFV,L3F Toshiba Semiconductor and Storage
View more  Part Status: Active
 Transistor Type: NPN - Pre-Biased
 Current - Collector (Ic) (Max): 100mA
 Voltage - Collector Emitter Breakdown (Max): 50V
 Resistor - Base (R1): 1 kOhms
 DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 1mA, 5V
 Vce Saturation (Max) @ Ib, Ic: 300mV @ 500A, 5mA
 Current - Collector Cutoff (Max): 100nA (ICBO)
 Power - Max: 150mW
 Mounting Type: Surface Mount
 Package / Case: SOT-723
 Supplier Device Package: VESM
1000
Order

8000+:

$0.0183

 RN1119MFVL3F-ND Datasheet
RN2111MFV,L3F RN2111MFVL3F-ND RN2111MFV,L3F Toshiba Semiconductor and Storage
View more  Part Status: Active
 Transistor Type: PNP - Pre-Biased
 Current - Collector (Ic) (Max): 100mA
 Voltage - Collector Emitter Breakdown (Max): 50V
 Resistor - Base (R1): 10 kOhms
 DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 1mA, 5V
 Vce Saturation (Max) @ Ib, Ic: 300mV @ 250A, 5mA
 Current - Collector Cutoff (Max): 100nA (ICBO)
 Power - Max: 150mW
 Mounting Type: Surface Mount
 Package / Case: SOT-723
 Supplier Device Package: VESM
1000
Order

8000+:

$0.0198

 RN2111MFVL3F-ND Datasheet
RN1113MFV,L3F RN1113MFVL3F-ND RN1113MFV,L3F Toshiba Semiconductor and Storage
View more  Part Status: Active
 Transistor Type: NPN - Pre-Biased
 Current - Collector (Ic) (Max): 100mA
 Voltage - Collector Emitter Breakdown (Max): 50V
 Resistor - Base (R1): 47 kOhms
 DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 1mA, 5V
 Vce Saturation (Max) @ Ib, Ic: 300mV @ 500A, 5mA
 Current - Collector Cutoff (Max): 100nA (ICBO)
 Power - Max: 150mW
 Mounting Type: Surface Mount
 Package / Case: SOT-723
 Supplier Device Package: VESM
1000
Order

8000+:

$0.0183

 RN1113MFVL3F-ND Datasheet
RN1111MFV,L3F RN1111MFVL3F-ND RN1111MFV,L3F Toshiba Semiconductor and Storage
View more  Part Status: Active
 Transistor Type: NPN - Pre-Biased
 Current - Collector (Ic) (Max): 100mA
 Voltage - Collector Emitter Breakdown (Max): 50V
 Resistor - Base (R1): 10 kOhms
 DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 1mA, 5V
 Vce Saturation (Max) @ Ib, Ic: 300mV @ 250A, 5mA
 Current - Collector Cutoff (Max): 100nA (ICBO)
 Power - Max: 150mW
 Mounting Type: Surface Mount
 Package / Case: SOT-723
 Supplier Device Package: VESM
1000
Order

8000+:

$0.0183

 RN1111MFVL3F-ND Datasheet
RN2110MFV,L3F RN2110MFVL3F-ND RN2110MFV,L3F Toshiba Semiconductor and Storage
View more  Part Status: Active
 Transistor Type: PNP - Pre-Biased
 Current - Collector (Ic) (Max): 100mA
 Voltage - Collector Emitter Breakdown (Max): 50V
 Resistor - Base (R1): 4.7 kOhms
 DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 1mA, 5V
 Vce Saturation (Max) @ Ib, Ic: 300mV @ 250A, 5mA
 Current - Collector Cutoff (Max): 100nA (ICBO)
 Power - Max: 150mW
 Mounting Type: Surface Mount
 Package / Case: SOT-723
 Supplier Device Package: VESM
1000
Order

8000+:

$0.0198

 RN2110MFVL3F-ND Datasheet
RN1132MFV,L3F RN1132MFVL3F-ND RN1132MFV,L3F Toshiba Semiconductor and Storage
View more  Part Status: Active
 Transistor Type: NPN - Pre-Biased
 Current - Collector (Ic) (Max): 100mA
 Voltage - Collector Emitter Breakdown (Max): 50V
 Resistor - Base (R1): 200 kOhms
 DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 1mA, 5V
 Vce Saturation (Max) @ Ib, Ic: 300mV @ 500A, 5mA
 Current - Collector Cutoff (Max): 100nA (ICBO)
 Power - Max: 150mW
 Mounting Type: Surface Mount
 Package / Case: SOT-723
 Supplier Device Package: VESM
1000
Order

8000+:

$0.0183

 RN1132MFVL3F-ND Datasheet
UNR211800L UNR211800LTR-ND UNR211800L Panasonic Electronic Components
View more  Packaging: Tape & Reel (TR)
 Part Status: Obsolete
 Transistor Type: PNP - Pre-Biased
 Current - Collector (Ic) (Max): 100mA
 Voltage - Collector Emitter Breakdown (Max): 50V
 Resistor - Base (R1): 510 Ohms
 Resistor - Emitter Base (R2): 5.1 kOhms
 DC Current Gain (hFE) (Min) @ Ic, Vce: 20 @ 5mA, 10V
 Vce Saturation (Max) @ Ib, Ic: 250mV @ 300A, 10mA
 Current - Collector Cutoff (Max): 500nA
 Frequency - Transition: 80MHz
 Power - Max: 200mW
 Mounting Type: Surface Mount
 Package / Case: TO-236-3, SC-59, SOT-23-3
 Supplier Device Package: Mini3-G1
1000
Order

1+:

$0

 UNR211800LTR-ND Datasheet
UNR9118G0L UNR9118G0LTR-ND UNR9118G0L Panasonic Electronic Components
View more  Packaging: Tape & Reel (TR)
 Part Status: Obsolete
 Transistor Type: PNP - Pre-Biased
 Current - Collector (Ic) (Max): 100mA
 Voltage - Collector Emitter Breakdown (Max): 50V
 Resistor - Base (R1): 510 Ohms
 Resistor - Emitter Base (R2): 5.1 kOhms
 DC Current Gain (hFE) (Min) @ Ic, Vce: 20 @ 5mA, 10V
 Vce Saturation (Max) @ Ib, Ic: 250mV @ 300A, 10mA
 Current - Collector Cutoff (Max): 500nA
 Frequency - Transition: 80MHz
 Power - Max: 125mW
 Mounting Type: Surface Mount
 Package / Case: SC-89, SOT-490
 Supplier Device Package: SSMini3-F3
1000
Order

1+:

$0

 UNR9118G0LTR-ND Datasheet
UNR5218G0L UNR5218G0LTR-ND UNR5218G0L Panasonic Electronic Components
View more  Packaging: Tape & Reel (TR)
 Part Status: Obsolete
 Transistor Type: NPN - Pre-Biased
 Current - Collector (Ic) (Max): 100mA
 Voltage - Collector Emitter Breakdown (Max): 50V
 Resistor - Base (R1): 510 Ohms
 Resistor - Emitter Base (R2): 5.1 kOhms
 DC Current Gain (hFE) (Min) @ Ic, Vce: 20 @ 5mA, 10V
 Vce Saturation (Max) @ Ib, Ic: 250mV @ 300A, 10mA
 Current - Collector Cutoff (Max): 500nA
 Frequency - Transition: 150MHz
 Power - Max: 150mW
 Mounting Type: Surface Mount
 Package / Case: SC-85
 Supplier Device Package: SMini3-F2
1000
Order

1+:

$0

 UNR5218G0LTR-ND Datasheet
UNR212X00L UNR212X00LTR-ND UNR212X00L Panasonic Electronic Components
View more  Packaging: Tape & Reel (TR)
 Part Status: Obsolete
 Transistor Type: PNP - Pre-Biased
 Current - Collector (Ic) (Max): 500mA
 Voltage - Collector Emitter Breakdown (Max): 50V
 Resistor - Base (R1): 270 Ohms
 Resistor - Emitter Base (R2): 5 kOhms
 DC Current Gain (hFE) (Min) @ Ic, Vce: 20 @ 5mA, 10V
 Vce Saturation (Max) @ Ib, Ic: 250mV @ 300A, 10mA
 Current - Collector Cutoff (Max): 500nA
 Frequency - Transition: 200MHz
 Power - Max: 200mW
 Mounting Type: Surface Mount
 Package / Case: TO-236-3, SC-59, SOT-23-3
 Supplier Device Package: Mini3-G1
1000
Order

1+:

$0

 UNR212X00LTR-ND Datasheet
DRA9152Z0L DRA9152Z0LTR-ND DRA9152Z0L Panasonic Electronic Components
View more  Packaging: Tape & Reel (TR)
 Part Status: Active
 Transistor Type: PNP - Pre-Biased
 Current - Collector (Ic) (Max): 100mA
 Voltage - Collector Emitter Breakdown (Max): 50V
 Resistor - Base (R1): 510 Ohms
 Resistor - Emitter Base (R2): 5.1 kOhms
 DC Current Gain (hFE) (Min) @ Ic, Vce: 20 @ 5mA, 10V
 Vce Saturation (Max) @ Ib, Ic: 250mV @ 500A, 10mA
 Current - Collector Cutoff (Max): 500nA
 Power - Max: 125mW
 Mounting Type: Surface Mount
 Package / Case: SC-89, SOT-490
 Supplier Device Package: SSMini3-F3-B
 Base Part Number: DRA9152
1000
Order

3000+:

$0.0558

6000+:

$0.0527

15000+:

$0.0481

30000+:

$0.045

75000+:

$0.0414

 DRA9152Z0LTR-ND Datasheet
DRC9152Z0L DRC9152Z0LTR-ND DRC9152Z0L Panasonic Electronic Components
View more  Packaging: Tape & Reel (TR)
 Part Status: Active
 Transistor Type: NPN - Pre-Biased
 Current - Collector (Ic) (Max): 100mA
 Voltage - Collector Emitter Breakdown (Max): 50V
 Resistor - Base (R1): 510 Ohms
 Resistor - Emitter Base (R2): 5.1 kOhms
 DC Current Gain (hFE) (Min) @ Ic, Vce: 20 @ 5mA, 10V
 Vce Saturation (Max) @ Ib, Ic: 250mV @ 500A, 10mA
 Current - Collector Cutoff (Max): 500nA
 Power - Max: 125mW
 Mounting Type: Surface Mount
 Package / Case: SC-89, SOT-490
 Supplier Device Package: SSMini3-F3-B
 Base Part Number: DRC9152
1000
Order

3000+:

$0.0558

6000+:

$0.0527

15000+:

$0.0481

30000+:

$0.045

75000+:

$0.0414

 DRC9152Z0LTR-ND Datasheet
UNR9118J0L UNR9118J0LTR-ND UNR9118J0L Panasonic Electronic Components
View more  Packaging: Tape & Reel (TR)
 Part Status: Obsolete
 Transistor Type: PNP - Pre-Biased
 Current - Collector (Ic) (Max): 100mA
 Voltage - Collector Emitter Breakdown (Max): 50V
 Resistor - Base (R1): 510 Ohms
 Resistor - Emitter Base (R2): 5.1 kOhms
 DC Current Gain (hFE) (Min) @ Ic, Vce: 20 @ 5mA, 10V
 Vce Saturation (Max) @ Ib, Ic: 250mV @ 300A, 10mA
 Current - Collector Cutoff (Max): 500nA
 Frequency - Transition: 80MHz
 Power - Max: 125mW
 Mounting Type: Surface Mount
 Package / Case: SC-89, SOT-490
 Supplier Device Package: SSMini3-F1
1000
Order

1+:

$0

 UNR9118J0LTR-ND Datasheet
UNR92A8G0L UNR92A8G0LTR-ND UNR92A8G0L Panasonic Electronic Components
View more  Packaging: Tape & Reel (TR)
 Part Status: Obsolete
 Transistor Type: NPN - Pre-Biased
 Current - Collector (Ic) (Max): 80mA
 Voltage - Collector Emitter Breakdown (Max): 50V
 Resistor - Base (R1): 510 Ohms
 Resistor - Emitter Base (R2): 5.1 kOhms
 DC Current Gain (hFE) (Min) @ Ic, Vce: 20 @ 5mA, 10V
 Vce Saturation (Max) @ Ib, Ic: 250mV @ 300A, 10mA
 Current - Collector Cutoff (Max): 500nA
 Frequency - Transition: 150MHz
 Power - Max: 125mW
 Mounting Type: Surface Mount
 Package / Case: SC-89, SOT-490
 Supplier Device Package: SSMini3-F3
1000
Order

1+:

$0

 UNR92A8G0LTR-ND Datasheet
UNR9218G0L UNR9218G0LTR-ND UNR9218G0L Panasonic Electronic Components
View more  Packaging: Tape & Reel (TR)
 Part Status: Obsolete
 Transistor Type: NPN - Pre-Biased
 Current - Collector (Ic) (Max): 100mA
 Voltage - Collector Emitter Breakdown (Max): 50V
 Resistor - Base (R1): 510 Ohms
 Resistor - Emitter Base (R2): 5.1 kOhms
 DC Current Gain (hFE) (Min) @ Ic, Vce: 20 @ 5mA, 10V
 Vce Saturation (Max) @ Ib, Ic: 250mV @ 300A, 10mA
 Current - Collector Cutoff (Max): 500nA
 Frequency - Transition: 150MHz
 Power - Max: 125mW
 Mounting Type: Surface Mount
 Package / Case: SC-89, SOT-490
 Supplier Device Package: SSMini3-F3
1000
Order

1+:

$0

 UNR9218G0LTR-ND Datasheet
UNR9218J0L UNR9218J0LTR-ND UNR9218J0L Panasonic Electronic Components
View more  Packaging: Tape & Reel (TR)
 Part Status: Obsolete
 Transistor Type: NPN - Pre-Biased
 Current - Collector (Ic) (Max): 100mA
 Voltage - Collector Emitter Breakdown (Max): 50V
 Resistor - Base (R1): 510 Ohms
 Resistor - Emitter Base (R2): 5.1 kOhms
 DC Current Gain (hFE) (Min) @ Ic, Vce: 20 @ 5mA, 10V
 Vce Saturation (Max) @ Ib, Ic: 250mV @ 300A, 10mA
 Current - Collector Cutoff (Max): 500nA
 Frequency - Transition: 150MHz
 Power - Max: 125mW
 Mounting Type: Surface Mount
 Package / Case: SC-89, SOT-490
 Supplier Device Package: SSMini3-F1
1000
Order

1+:

$0

 UNR9218J0LTR-ND Datasheet
UNR221800L UNR221800LTR-ND UNR221800L Panasonic Electronic Components
View more  Packaging: Tape & Reel (TR)
 Part Status: Obsolete
 Transistor Type: NPN - Pre-Biased
 Current - Collector (Ic) (Max): 100mA
 Voltage - Collector Emitter Breakdown (Max): 50V
 Resistor - Base (R1): 510 Ohms
 Resistor - Emitter Base (R2): 5.1 kOhms
 DC Current Gain (hFE) (Min) @ Ic, Vce: 20 @ 5mA, 10V
 Vce Saturation (Max) @ Ib, Ic: 250mV @ 300A, 10mA
 Current - Collector Cutoff (Max): 500nA
 Frequency - Transition: 150MHz
 Power - Max: 200mW
 Mounting Type: Surface Mount
 Package / Case: TO-236-3, SC-59, SOT-23-3
 Supplier Device Package: Mini3-G1
1000
Order

--

 UNR221800LTR-ND Datasheet
UNR5118G0L UNR5118G0LTR-ND UNR5118G0L Panasonic Electronic Components
View more  Packaging: Tape & Reel (TR)
 Part Status: Obsolete
 Transistor Type: PNP - Pre-Biased
 Current - Collector (Ic) (Max): 100mA
 Voltage - Collector Emitter Breakdown (Max): 50V
 Resistor - Base (R1): 510 Ohms
 Resistor - Emitter Base (R2): 5.1 kOhms
 DC Current Gain (hFE) (Min) @ Ic, Vce: 20 @ 5mA, 10V
 Vce Saturation (Max) @ Ib, Ic: 250mV @ 300A, 10mA
 Current - Collector Cutoff (Max): 500nA
 Frequency - Transition: 80MHz
 Power - Max: 150mW
 Mounting Type: Surface Mount
 Package / Case: SC-85
 Supplier Device Package: SMini3-F2
1000
Order

1+:

$0

 UNR5118G0LTR-ND Datasheet
BCR 179L3 E6327 BCR179L3E6327-N
D		 BCR 179L3 E6327 Infineon Technologies
View more  Packaging: Tape & Reel (TR)
 Part Status: Discontinued at Digi-Key
 Transistor Type: PNP - Pre-Biased
 Current - Collector (Ic) (Max): 100mA
 Voltage - Collector Emitter Breakdown (Max): 50V
 Resistor - Base (R1): 10 kOhms
 DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 5mA, 5V
 Vce Saturation (Max) @ Ib, Ic: 300mV @ 500A, 10mA
 Current - Collector Cutoff (Max): 100nA (ICBO)
 Frequency - Transition: 150MHz
 Power - Max: 250mW
 Mounting Type: Surface Mount
 Package / Case: SC-101, SOT-883
 Supplier Device Package: PG-TSLP-3-4
1000
Order

1+:

$0

 BCR179L3E6327-ND Datasheet
BCR 119L3 E6327 BCR119L3E6327-N
D		 BCR 119L3 E6327 Infineon Technologies
View more  Packaging: Tape & Reel (TR)
 Part Status: Discontinued at Digi-Key
 Transistor Type: NPN - Pre-Biased
 Current - Collector (Ic) (Max): 100mA
 Voltage - Collector Emitter Breakdown (Max): 50V
 Resistor - Base (R1): 4.7 kOhms
 DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 5mA, 5V
 Vce Saturation (Max) @ Ib, Ic: 300mV @ 500A, 10mA
 Current - Collector Cutoff (Max): 100nA (ICBO)
 Frequency - Transition: 150MHz
 Power - Max: 250mW
 Mounting Type: Surface Mount
 Package / Case: SC-101, SOT-883
 Supplier Device Package: PG-TSLP-3-4
 Base Part Number: BCR119
1000
Order

1+:

$0

 BCR119L3E6327-ND Datasheet
NSBA144TF3T5G NSBA144TF3T5G-N
D		 NSBA144TF3T5G ON Semiconductor
View more  Packaging: Tape & Reel (TR)
 Part Status: Active
 Transistor Type: PNP - Pre-Biased
 Current - Collector (Ic) (Max): 100mA
 Voltage - Collector Emitter Breakdown (Max): 50V
 Resistor - Base (R1): 47 kOhms
 DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 5mA, 10V
 Vce Saturation (Max) @ Ib, Ic: 250mV @ 1mA, 10mA
 Current - Collector Cutoff (Max): 500nA
 Power - Max: 254mW
 Mounting Type: Surface Mount
 Package / Case: SOT-1123
 Supplier Device Package: SOT-1123
1000
Order

8000+:

$0.0615

 NSBA144TF3T5G-ND Datasheet
BCR 179F E6327 BCR179FE6327-ND BCR 179F E6327 Infineon Technologies
View more  Packaging: Tape & Reel (TR)
 Part Status: Obsolete
 Transistor Type: PNP - Pre-Biased
 Current - Collector (Ic) (Max): 100mA
 Voltage - Collector Emitter Breakdown (Max): 50V
 Resistor - Base (R1): 10 kOhms
 DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 5mA, 5V
 Vce Saturation (Max) @ Ib, Ic: 300mV @ 500A, 10mA
 Current - Collector Cutoff (Max): 100nA (ICBO)
 Frequency - Transition: 150MHz
 Power - Max: 250mW
 Mounting Type: Surface Mount
 Package / Case: SOT-723
 Supplier Device Package: PG-TSFP-3
1000
Order

1+:

$0

 BCR179FE6327-ND Datasheet
MUN5240T1G MUN5240T1G-ND MUN5240T1G ON Semiconductor
View more  Packaging: Tape & Reel (TR)
 Part Status: Active
 Transistor Type: NPN - Pre-Biased
 Current - Collector (Ic) (Max): 100mA
 Voltage - Collector Emitter Breakdown (Max): 50V
 Resistor - Base (R1): 47 kOhms
 DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 5mA, 10V
 Vce Saturation (Max) @ Ib, Ic: 250mV @ 1mA, 10mA
 Current - Collector Cutoff (Max): 500nA
 Power - Max: 202mW
 Mounting Type: Surface Mount
 Package / Case: SC-70, SOT-323
 Supplier Device Package: SC-70-3 (SOT323)
1000
Order

15000+:

$0.0144

 MUN5240T1G-ND Datasheet
BCR 189F E6327 BCR189FE6327-ND BCR 189F E6327 Infineon Technologies
View more  Packaging: Tape & Reel (TR)
 Part Status: Obsolete
 Transistor Type: PNP - Pre-Biased
 Current - Collector (Ic) (Max): 100mA
 Voltage - Collector Emitter Breakdown (Max): 50V
 Resistor - Base (R1): 22 kOhms
 DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 5mA, 5V
 Vce Saturation (Max) @ Ib, Ic: 300mV @ 500A, 10mA
 Current - Collector Cutoff (Max): 100nA (ICBO)
 Frequency - Transition: 200MHz
 Power - Max: 250mW
 Mounting Type: Surface Mount
 Package / Case: SOT-723
 Supplier Device Package: PG-TSFP-3
1000
Order

1+:

$0

 BCR189FE6327-ND Datasheet
BCR 169L3 E6327 BCR169L3E6327-N
D		 BCR 169L3 E6327 Infineon Technologies
View more  Packaging: Tape & Reel (TR)
 Part Status: Discontinued at Digi-Key
 Transistor Type: PNP - Pre-Biased
 Current - Collector (Ic) (Max): 100mA
 Voltage - Collector Emitter Breakdown (Max): 50V
 Resistor - Base (R1): 4.7 kOhms
 DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 5mA, 5V
 Vce Saturation (Max) @ Ib, Ic: 300mV @ 500A, 10mA
 Current - Collector Cutoff (Max): 100nA (ICBO)
 Frequency - Transition: 200MHz
 Power - Max: 250mW
 Mounting Type: Surface Mount
 Package / Case: SC-101, SOT-883
 Supplier Device Package: PG-TSLP-3-4
 Base Part Number: BCR169
1000
Order

1+:

$0

 BCR169L3E6327-ND Datasheet
BCR169WE6327HTSA1 BCR169WE6327HTS
A1TR-NDTR-ND		 BCR169WE6327HTS
A1		 Infineon Technologies
View more  Packaging: Tape & Reel (TR)
 Part Status: Obsolete
 Transistor Type: PNP - Pre-Biased
 Current - Collector (Ic) (Max): 100mA
 Voltage - Collector Emitter Breakdown (Max): 50V
 Resistor - Base (R1): 4.7 kOhms
 DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 5mA, 5V
 Vce Saturation (Max) @ Ib, Ic: 300mV @ 500A, 10mA
 Current - Collector Cutoff (Max): 100nA (ICBO)
 Frequency - Transition: 200MHz
 Power - Max: 250mW
 Mounting Type: Surface Mount
 Package / Case: SC-70, SOT-323
 Supplier Device Package: PG-SOT323-3
 Base Part Number: BCR169
1000
Order

1+:

$0

 BCR169WE6327HTSA1TR-NDTR-ND Datasheet
RN2112ACT(TPL3) RN2112ACT(TPL3)
TR-ND		 RN2112ACT(TPL3) Toshiba Semiconductor and Storage
View more  Packaging: Tape & Reel (TR)
 Part Status: Active
 Transistor Type: PNP - Pre-Biased
 Current - Collector (Ic) (Max): 80mA
 Voltage - Collector Emitter Breakdown (Max): 50V
 Resistor - Base (R1): 22 kOhms
 DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 1mA, 5V
 Vce Saturation (Max) @ Ib, Ic: 150mV @ 250A, 5mA
 Current - Collector Cutoff (Max): 100nA (ICBO)
 Power - Max: 100mW
 Mounting Type: Surface Mount
 Package / Case: SC-101, SOT-883
 Supplier Device Package: CST3
10000
Order

10000+:

$0.0328

 RN2112ACT(TPL3)TR-ND Datasheet
BCR 139F E6327 BCR139FE6327-ND BCR 139F E6327 Infineon Technologies
View more  Packaging: Tape & Reel (TR)
 Part Status: Obsolete
 Transistor Type: NPN - Pre-Biased
 Current - Collector (Ic) (Max): 100mA
 Voltage - Collector Emitter Breakdown (Max): 50V
 Resistor - Base (R1): 22 kOhms
 DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 5mA, 5V
 Vce Saturation (Max) @ Ib, Ic: 300mV @ 500A, 10mA
 Current - Collector Cutoff (Max): 100nA (ICBO)
 Frequency - Transition: 150MHz
 Power - Max: 250mW
 Mounting Type: Surface Mount
 Package / Case: SOT-723
 Supplier Device Package: PG-TSFP-3
1000
Order

1+:

$0

 BCR139FE6327-ND Datasheet
RN2310,LF RN2310LFTR-ND RN2310,LF Toshiba Semiconductor and Storage
View more  Packaging: Tape & Reel (TR)
 Part Status: Active
 Transistor Type: PNP - Pre-Biased
 Current - Collector (Ic) (Max): 100mA
 Voltage - Collector Emitter Breakdown (Max): 50V
 Resistor - Base (R1): 4.7 kOhms
 DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 1mA, 5V
 Vce Saturation (Max) @ Ib, Ic: 300mV @ 250A, 5mA
 Current - Collector Cutoff (Max): 100nA (ICBO)
 Frequency - Transition: 200MHz
 Power - Max: 100mW
 Mounting Type: Surface Mount
 Package / Case: SC-70, SOT-323
 Supplier Device Package: USM
1000
Order

3000+:

$0.0202

 RN2310LFTR-ND Datasheet
BCR 139T E6327 BCR139TE6327-ND BCR 139T E6327 Infineon Technologies
View more  Packaging: Tape & Reel (TR)
 Part Status: Discontinued at Digi-Key
 Transistor Type: NPN - Pre-Biased
 Current - Collector (Ic) (Max): 100mA
 Voltage - Collector Emitter Breakdown (Max): 50V
 Resistor - Base (R1): 22 kOhms
 DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 5mA, 5V
 Vce Saturation (Max) @ Ib, Ic: 300mV @ 500A, 10mA
 Current - Collector Cutoff (Max): 100nA (ICBO)
 Frequency - Transition: 150MHz
 Power - Max: 250mW
 Mounting Type: Surface Mount
 Package / Case: SC-75, SOT-416
 Supplier Device Package: PG-SC-75
1000
Order

1+:

$0

 BCR139TE6327-ND Datasheet
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