UNR5218G0L Discrete Semiconductor Products |
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Allicdata Part #: | UNR5218G0LTR-ND |
Manufacturer Part#: |
UNR5218G0L |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Panasonic Electronic Components |
Short Description: | TRANS PREBIAS NPN 150MW SMINI3 |
More Detail: | Pre-Biased Bipolar Transistor (BJT) NPN - Pre-Bias... |
DataSheet: | UNR5218G0L Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
Series: | -- |
Packaging: | Tape & Reel (TR) |
Part Status: | Obsolete |
Transistor Type: | NPN - Pre-Biased |
Current - Collector (Ic) (Max): | 100mA |
Voltage - Collector Emitter Breakdown (Max): | 50V |
Resistor - Base (R1): | 510 Ohms |
Resistor - Emitter Base (R2): | 5.1 kOhms |
DC Current Gain (hFE) (Min) @ Ic, Vce: | 20 @ 5mA, 10V |
Vce Saturation (Max) @ Ib, Ic: | 250mV @ 300µA, 10mA |
Current - Collector Cutoff (Max): | 500nA |
Frequency - Transition: | 150MHz |
Power - Max: | 150mW |
Mounting Type: | Surface Mount |
Package / Case: | SC-85 |
Supplier Device Package: | SMini3-F2 |
Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us: sales@allicdata.com
UNR5218G0L Application Field and Working Principle
The UNR5218G0L is a pre-biased single bipolar junction transistor (BJT) designed for use in applications ranging from digital signal processing to motor drive circuits. The transistor integrates a 3-terminal active element between a pair of complementary MOSFETs, thus providing efficient on-off control of power at low voltages and currents. This transistor is ideal for applications needing low voltage and current control, such as digital signal processing (DSP) and motor drive circuits.
The base terminal of the UNR5218G0L is connected to the collector terminal, resulting in a "pre-biased" state. When a signal is applied to the base terminal, the current is diverted to the collector terminal, turning the transistor on. This energy is then passed to the emitter terminal, turning off the transistor as the voltage is reduced. Thus, the current can be accurately controlled and switched between the two terminals.
The UNR5218G0L supports a wide range of operating voltages from 10V to 30V and up to 20A peak. The maximum power rating for the device is 50W, providing ample power for most applications. The on-resistance of the device is typically 0.2Ω, allowing for efficient on-off control of power output. The saturation voltage drop can be reduced significantly by reversing the polarity of the voltage applied to the collector. The frequency response is up to 1MHz and the gain is typically 200.
Beyond being used as a pre-biased single bipolar junction transistor, the UNR5218G0L can also be used in low-noise audio amplifier circuits. With a noise level of -90dB, the transistor helps reduce unwanted background sound and improve sound quality. The on-resistance and high-frequency response of the device make it an ideal choice for audio applications. Additionally, the high speed switching capabilities of the device make it suitable for automotive applications and other industrial applications.
The UNR5218G0L pre-biased single bipolar junction transistor is an excellent choice for a wide variety of applications. Its low voltage and current control, wide operating voltage range and high speed switching make it a reliable device for motor drive circuits and other applications requiring efficient on-off control of power. Its low noise level and high frequency response make it suitable for low noise audio amplifier applications, and its robust construction makes it suitable for industrial and automotive applications.
The specific data is subject to PDF, and the above content is for reference
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