MUN5240T1G Allicdata Electronics
Allicdata Part #:

MUN5240T1G-ND

Manufacturer Part#:

MUN5240T1G

Price: $ 0.01
Product Category:

Discrete Semiconductor Products

Manufacturer: ON Semiconductor
Short Description: TRANS BRT NPN 50V 100MA SC70-3
More Detail: Pre-Biased Bipolar Transistor (BJT) NPN - Pre-Bias...
DataSheet: MUN5240T1G datasheetMUN5240T1G Datasheet/PDF
Quantity: 1000
15000 +: $ 0.01442
Stock 1000Can Ship Immediately
$ 0.01
Specifications
Series: --
Packaging: Tape & Reel (TR) 
Part Status: Active
Transistor Type: NPN - Pre-Biased
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Resistor - Base (R1): 47 kOhms
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 5mA, 10V
Vce Saturation (Max) @ Ib, Ic: 250mV @ 1mA, 10mA
Current - Collector Cutoff (Max): 500nA
Power - Max: 202mW
Mounting Type: Surface Mount
Package / Case: SC-70, SOT-323
Supplier Device Package: SC-70-3 (SOT323)
Description

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The MUN5240T1G is an ultra-high voltage pre-biased single bipolar junction transistor (BJT) specially developed for use in various application fields such as automotive, industrial, consumer, and telecommunications. It is manufactured by ON Semiconductor and offers excellent power gain, uniformity, and reliability. In this article, we will discuss the application field and working principle of the MUN5240T1G.

Application Field

The MUN5240T1G has a high voltage rating of up to 810 V and a collector current of up to 0.5 A. This makes it ideal for use in high voltage applications, such as automotive applications, including light and sign control, engine and driver control, and battery charge monitoring. It can also be used for industrial applications, such as controlling small motors and fans, and for consumer applications, such as controlling household appliance motors, TV power supplies, and home security systems. In telecommunications, it is used as an amplifier in phone systems, cable TV amplifiers, and line boosters.

Working Principle

The MUN5240T1G is a single bipolar junction transistor (BJT) that combines two transistors in a single package. It is a pre-biased transistor that removes the need to manually adjust the bias current by using a preset voltage or current. A BJT is a current-controlled device, which means that the current through its base determines the current flowing through its collector. In the MUN5240T1G, the bias voltage is set to a specific level and the magnitude of the base current determines the collector current. When the base current decreases, the collector current also decreases, and when the base current increases, the collector current increases. This current-controlled behavior of a BJT makes it ideal for use in power amplifiers, voltage regulators, and other power management applications.

Conclusion

The MUN5240T1G is an ultra-high voltage pre-biased single bipolar junction transistor (BJT) designed for use in automotive, industrial, consumer, and telecommunications applications. It has a high voltage rating of up to 810 V and a collector current of up to 0.5 A, making it ideal for a variety of high voltage applications. In addition, its current-controlled behavior makes it a great choice for power amplifiers, voltage regulators, and other power management applications.

The specific data is subject to PDF, and the above content is for reference

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