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Allicdata Part#	Mft.Part#	Company	Spec.	QTY.	Pricing(USD)
IRFU4620PBF-ND	IRFU4620PBF	Infineon Technologies	View more Series: HEXFET Packaging: Tube Part Status: Obsolete FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 200V Current - Continuous Drain (Id) @ 25C: 24A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 78 mOhm @ 15A, 10V Vgs(th) (Max) @ Id: 5V @ 100A Gate Charge (Qg) (Max) @ Vgs: 38nC @ 10V Vgs (Max): 20V Input Capacitance (Ciss) (Max) @ Vds: 1710pF @ 50V Power Dissipation (Max): 144W (Tc) Operating Temperature: -55C ~ 175C (TJ) Mounting Type: Through Hole Supplier Device Package: IPAK (TO-251) Package / Case: TO-251-3 Short Leads, IPak, TO-251AA	1000 Order	1+: $0
IRFS5620TRLPBFT R-ND	IRFS5620TRLPBF	Infineon Technologies	View more Packaging: Tape & Reel (TR) Part Status: Obsolete FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 200V Current - Continuous Drain (Id) @ 25C: 24A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 77.5 mOhm @ 15A, 10V Vgs(th) (Max) @ Id: 5V @ 100A Gate Charge (Qg) (Max) @ Vgs: 38nC @ 10V Vgs (Max): 20V Input Capacitance (Ciss) (Max) @ Vds: 1710pF @ 50V Power Dissipation (Max): 144W (Tc) Operating Temperature: -55C ~ 175C (TJ) Mounting Type: Surface Mount Supplier Device Package: D2PAK Package / Case: TO-263-3, DPak (2 Leads + Tab), TO-263AB	1000 Order	--
IRLS3036-7PPBF- ND	IRLS3036-7PPBF	Infineon Technologies	View more Series: HEXFET Packaging: Tube Part Status: Discontinued at Digi-Key FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25C: 240A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Rds On (Max) @ Id, Vgs: 1.9 mOhm @ 180A, 10V Vgs(th) (Max) @ Id: 2.5V @ 250A Gate Charge (Qg) (Max) @ Vgs: 160nC @ 4.5V Vgs (Max): 16V Input Capacitance (Ciss) (Max) @ Vds: 11270pF @ 50V Power Dissipation (Max): 380W (Tc) Operating Temperature: -55C ~ 175C (TJ) Mounting Type: Surface Mount Supplier Device Package: D2PAK (7-Lead) Package / Case: TO-263-7, DPak (6 Leads + Tab), TO-263CB	1000 Order	--
IRFS5620PBF-ND	IRFS5620PBF	Infineon Technologies	View more Packaging: Tube Part Status: Obsolete FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 200V Current - Continuous Drain (Id) @ 25C: 24A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 77.5 mOhm @ 15A, 10V Vgs(th) (Max) @ Id: 5V @ 100A Gate Charge (Qg) (Max) @ Vgs: 38nC @ 10V Vgs (Max): 20V Input Capacitance (Ciss) (Max) @ Vds: 1710pF @ 50V Power Dissipation (Max): 144W (Tc) Operating Temperature: -55C ~ 175C (TJ) Mounting Type: Surface Mount Supplier Device Package: D2PAK Package / Case: TO-263-3, DPak (2 Leads + Tab), TO-263AB	1000 Order	1+: $0
IRFR4615PBF-ND	IRFR4615PBF	Infineon Technologies	View more Series: HEXFET Packaging: Tube Part Status: Discontinued at Digi-Key FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 150V Current - Continuous Drain (Id) @ 25C: 33A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 42 mOhm @ 21A, 10V Vgs(th) (Max) @ Id: 5V @ 100A Gate Charge (Qg) (Max) @ Vgs: 26nC @ 10V Vgs (Max): 20V Input Capacitance (Ciss) (Max) @ Vds: 1750pF @ 50V Power Dissipation (Max): 144W (Tc) Operating Temperature: -55C ~ 175C (TJ) Mounting Type: Surface Mount Supplier Device Package: D-Pak Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63	1000 Order	--
IRFR4620PBF-ND	IRFR4620PBF	Infineon Technologies	View more Series: HEXFET Packaging: Tube Part Status: Discontinued at Digi-Key FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 200V Current - Continuous Drain (Id) @ 25C: 24A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 78 mOhm @ 15A, 10V Vgs(th) (Max) @ Id: 5V @ 100A Gate Charge (Qg) (Max) @ Vgs: 38nC @ 10V Vgs (Max): 20V Input Capacitance (Ciss) (Max) @ Vds: 1710pF @ 50V Power Dissipation (Max): 144W (Tc) Operating Temperature: -55C ~ 175C (TJ) Mounting Type: Surface Mount Supplier Device Package: D-Pak Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63	1000 Order	--
FDB3860TR-ND	FDB3860	ON Semiconductor	View more Series: PowerTrench Packaging: Tape & Reel (TR) Part Status: Obsolete FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 100V Current - Continuous Drain (Id) @ 25C: 6.4A (Ta), 30A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 37 mOhm @ 5.9A, 10V Vgs(th) (Max) @ Id: 4.5V @ 250A Gate Charge (Qg) (Max) @ Vgs: 30nC @ 10V Vgs (Max): 20V Input Capacitance (Ciss) (Max) @ Vds: 1740pF @ 50V Power Dissipation (Max): 3.1W (Ta), 71W (Tc) Operating Temperature: -55C ~ 150C (TJ) Mounting Type: Surface Mount Supplier Device Package: TO-263AB Package / Case: TO-263-3, DPak (2 Leads + Tab), TO-263AB	1000 Order	--
BSC152N10NSFGAT MA1TR-ND	BSC152N10NSFGAT MA1	Infineon Technologies	View more Series: OptiMOS Packaging: Tape & Reel (TR) Part Status: Obsolete FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 100V Current - Continuous Drain (Id) @ 25C: 9.4A (Ta), 63A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 15.2 mOhm @ 25A, 10V Vgs(th) (Max) @ Id: 4V @ 72A Gate Charge (Qg) (Max) @ Vgs: 29nC @ 10V Vgs (Max): 20V Input Capacitance (Ciss) (Max) @ Vds: 1900pF @ 50V Power Dissipation (Max): 114W (Tc) Operating Temperature: -55C ~ 150C (TJ) Mounting Type: Surface Mount Supplier Device Package: PG-TDSON-8 Package / Case: 8-PowerTDFN	1000 Order	1+: $0
IPB05CN10NG-ND	IPB05CN10N G	Infineon Technologies	View more Series: OptiMOS Packaging: Tape & Reel (TR) Part Status: Obsolete FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 100V Current - Continuous Drain (Id) @ 25C: 100A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 5.1 mOhm @ 100A, 10V Vgs(th) (Max) @ Id: 4V @ 250A Gate Charge (Qg) (Max) @ Vgs: 181nC @ 10V Vgs (Max): 20V Input Capacitance (Ciss) (Max) @ Vds: 12000pF @ 50V Power Dissipation (Max): 300W (Tc) Operating Temperature: -55C ~ 175C (TJ) Mounting Type: Surface Mount Supplier Device Package: DPAK (TO-263AB) Package / Case: TO-263-3, DPak (2 Leads + Tab), TO-263AB	1000 Order	1+: $0
IPB06CN10NG-ND	IPB06CN10N G	Infineon Technologies	View more Series: OptiMOS Packaging: Tape & Reel (TR) Part Status: Obsolete FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 100V Current - Continuous Drain (Id) @ 25C: 100A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 6.2 mOhm @ 100A, 10V Vgs(th) (Max) @ Id: 4V @ 180A Gate Charge (Qg) (Max) @ Vgs: 139nC @ 10V Vgs (Max): 20V Input Capacitance (Ciss) (Max) @ Vds: 9200pF @ 50V Power Dissipation (Max): 214W (Tc) Operating Temperature: -55C ~ 175C (TJ) Mounting Type: Surface Mount Supplier Device Package: DPAK (TO-263AB) Package / Case: TO-263-3, DPak (2 Leads + Tab), TO-263AB	1000 Order	1+: $0
IPB08CN10NG-ND	IPB08CN10N G	Infineon Technologies	View more Series: OptiMOS Packaging: Tape & Reel (TR) Part Status: Obsolete FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 100V Current - Continuous Drain (Id) @ 25C: 95A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 8.2 mOhm @ 95A, 10V Vgs(th) (Max) @ Id: 4V @ 130A Gate Charge (Qg) (Max) @ Vgs: 100nC @ 10V Vgs (Max): 20V Input Capacitance (Ciss) (Max) @ Vds: 6660pF @ 50V Power Dissipation (Max): 167W (Tc) Operating Temperature: -55C ~ 175C (TJ) Mounting Type: Surface Mount Supplier Device Package: DPAK (TO-263AB) Package / Case: TO-263-3, DPak (2 Leads + Tab), TO-263AB	1000 Order	1+: $0
IPB12CN10NG-ND	IPB12CN10N G	Infineon Technologies	View more Series: OptiMOS Packaging: Tape & Reel (TR) Part Status: Obsolete FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 100V Current - Continuous Drain (Id) @ 25C: 67A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 12.6 mOhm @ 67A, 10V Vgs(th) (Max) @ Id: 4V @ 83A Gate Charge (Qg) (Max) @ Vgs: 65nC @ 10V Vgs (Max): 20V Input Capacitance (Ciss) (Max) @ Vds: 4320pF @ 50V Power Dissipation (Max): 125W (Tc) Operating Temperature: -55C ~ 175C (TJ) Mounting Type: Surface Mount Supplier Device Package: DPAK (TO-263AB) Package / Case: TO-263-3, DPak (2 Leads + Tab), TO-263AB	1000 Order	1+: $0
IPB16CN10NG-ND	IPB16CN10N G	Infineon Technologies	View more Series: OptiMOS Packaging: Tape & Reel (TR) Part Status: Obsolete FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 100V Current - Continuous Drain (Id) @ 25C: 53A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 16.5 mOhm @ 53A, 10V Vgs(th) (Max) @ Id: 4V @ 61A Gate Charge (Qg) (Max) @ Vgs: 48nC @ 10V Vgs (Max): 20V Input Capacitance (Ciss) (Max) @ Vds: 3220pF @ 50V Power Dissipation (Max): 100W (Tc) Operating Temperature: -55C ~ 175C (TJ) Mounting Type: Surface Mount Supplier Device Package: DPAK (TO-263AB) Package / Case: TO-263-3, DPak (2 Leads + Tab), TO-263AB	1000 Order	1+: $0
IPB26CN10NGATMA 1TR-ND	IPB26CN10NGATMA 1	Infineon Technologies	View more Series: OptiMOS Packaging: Tape & Reel (TR) Part Status: Obsolete FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 100V Current - Continuous Drain (Id) @ 25C: 35A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 26 mOhm @ 35A, 10V Vgs(th) (Max) @ Id: 4V @ 39A Gate Charge (Qg) (Max) @ Vgs: 31nC @ 10V Vgs (Max): 20V Input Capacitance (Ciss) (Max) @ Vds: 2070pF @ 50V Power Dissipation (Max): 71W (Tc) Operating Temperature: -55C ~ 175C (TJ) Mounting Type: Surface Mount Supplier Device Package: DPAK (TO-263AB) Package / Case: TO-263-3, DPak (2 Leads + Tab), TO-263AB	1000 Order	1+: $0
IPB34CN10NGATMA 1TR-ND	IPB34CN10NGATMA 1	Infineon Technologies	View more Series: OptiMOS Packaging: Tape & Reel (TR) Part Status: Obsolete FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 100V Current - Continuous Drain (Id) @ 25C: 27A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 34 mOhm @ 27A, 10V Vgs(th) (Max) @ Id: 4V @ 29A Gate Charge (Qg) (Max) @ Vgs: 24nC @ 10V Vgs (Max): 20V Input Capacitance (Ciss) (Max) @ Vds: 1570pF @ 50V Power Dissipation (Max): 58W (Tc) Operating Temperature: -55C ~ 175C (TJ) Mounting Type: Surface Mount Supplier Device Package: DPAK (TO-263AB) Package / Case: TO-263-3, DPak (2 Leads + Tab), TO-263AB	1000 Order	1+: $0
IPB50CN10NGATMA 1TR-ND	IPB50CN10NGATMA 1	Infineon Technologies	View more Series: OptiMOS Packaging: Tape & Reel (TR) Part Status: Obsolete FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 100V Current - Continuous Drain (Id) @ 25C: 20A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 50 mOhm @ 20A, 10V Vgs(th) (Max) @ Id: 4V @ 20A Gate Charge (Qg) (Max) @ Vgs: 16nC @ 10V Vgs (Max): 20V Input Capacitance (Ciss) (Max) @ Vds: 1090pF @ 50V Power Dissipation (Max): 44W (Tc) Operating Temperature: -55C ~ 175C (TJ) Mounting Type: Surface Mount Supplier Device Package: PG-TO263-3-2 Package / Case: TO-263-3, DPak (2 Leads + Tab), TO-263AB	1000 Order	1+: $0
IPB79CN10NG-ND	IPB79CN10N G	Infineon Technologies	View more Series: OptiMOS Packaging: Tape & Reel (TR) Part Status: Obsolete FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 100V Current - Continuous Drain (Id) @ 25C: 13A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 79 mOhm @ 13A, 10V Vgs(th) (Max) @ Id: 4V @ 12A Gate Charge (Qg) (Max) @ Vgs: 11nC @ 10V Vgs (Max): 20V Input Capacitance (Ciss) (Max) @ Vds: 716pF @ 50V Power Dissipation (Max): 31W (Tc) Operating Temperature: -55C ~ 175C (TJ) Mounting Type: Surface Mount Supplier Device Package: DPAK (TO-263AB) Package / Case: TO-263-3, DPak (2 Leads + Tab), TO-263AB	1000 Order	1+: $0
IPD068N10N3GBTM A1TR-ND	IPD068N10N3GBTM A1	Infineon Technologies	View more Series: OptiMOS Packaging: Tape & Reel (TR) Part Status: Obsolete FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 100V Current - Continuous Drain (Id) @ 25C: 90A (Tc) Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Rds On (Max) @ Id, Vgs: 6.8 mOhm @ 90A, 10V Vgs(th) (Max) @ Id: 3.5V @ 90A Gate Charge (Qg) (Max) @ Vgs: 68nC @ 10V Vgs (Max): 20V Input Capacitance (Ciss) (Max) @ Vds: 4910pF @ 50V Power Dissipation (Max): 150W (Tc) Operating Temperature: -55C ~ 175C (TJ) Mounting Type: Surface Mount Supplier Device Package: PG-TO252-3 Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63	1000 Order	1+: $0
IPD082N10N3GBTM A1TR-ND	IPD082N10N3GBTM A1	Infineon Technologies	View more Series: OptiMOS Packaging: Tape & Reel (TR) Part Status: Obsolete FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 100V Current - Continuous Drain (Id) @ 25C: 80A (Tc) Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Rds On (Max) @ Id, Vgs: 8.2 mOhm @ 73A, 10V Vgs(th) (Max) @ Id: 3.5V @ 75A Gate Charge (Qg) (Max) @ Vgs: 55nC @ 10V Vgs (Max): 20V Input Capacitance (Ciss) (Max) @ Vds: 3980pF @ 50V Power Dissipation (Max): 125W (Tc) Operating Temperature: -55C ~ 175C (TJ) Mounting Type: Surface Mount Supplier Device Package: PG-TO252-3 Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63	1000 Order	1+: $0
IPD12CN10NGBUMA 1TR-ND	IPD12CN10NGBUMA 1	Infineon Technologies	View more Series: OptiMOS Packaging: Tape & Reel (TR) Part Status: Obsolete FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 100V Current - Continuous Drain (Id) @ 25C: 67A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 12.4 mOhm @ 67A, 10V Vgs(th) (Max) @ Id: 4V @ 83A Gate Charge (Qg) (Max) @ Vgs: 65nC @ 10V Vgs (Max): 20V Input Capacitance (Ciss) (Max) @ Vds: 4320pF @ 50V Power Dissipation (Max): 125W (Tc) Operating Temperature: -55C ~ 175C (TJ) Mounting Type: Surface Mount Supplier Device Package: PG-TO252-3 Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63	1000 Order	1+: $0
IPD16CN10NG-ND	IPD16CN10N G	Infineon Technologies	View more Series: OptiMOS Packaging: Tape & Reel (TR) Part Status: Obsolete FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 100V Current - Continuous Drain (Id) @ 25C: 53A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 16 mOhm @ 53A, 10V Vgs(th) (Max) @ Id: 4V @ 61A Gate Charge (Qg) (Max) @ Vgs: 48nC @ 10V Vgs (Max): 20V Input Capacitance (Ciss) (Max) @ Vds: 3220pF @ 50V Power Dissipation (Max): 100W (Tc) Operating Temperature: -55C ~ 175C (TJ) Mounting Type: Surface Mount Supplier Device Package: PG-TO252-3 Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63	1000 Order	1+: $0
IPD33CN10NGBUMA 1TR-ND	IPD33CN10NGBUMA 1	Infineon Technologies	View more Series: OptiMOS Packaging: Tape & Reel (TR) Part Status: Obsolete FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 100V Current - Continuous Drain (Id) @ 25C: 27A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 33 mOhm @ 27A, 10V Vgs(th) (Max) @ Id: 4V @ 29A Gate Charge (Qg) (Max) @ Vgs: 24nC @ 10V Vgs (Max): 20V Input Capacitance (Ciss) (Max) @ Vds: 1570pF @ 50V Power Dissipation (Max): 58W (Tc) Operating Temperature: -55C ~ 175C (TJ) Mounting Type: Surface Mount Supplier Device Package: PG-TO252-3 Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63	1000 Order	1+: $0
IPD49CN10NG-ND	IPD49CN10N G	Infineon Technologies	View more Series: OptiMOS Packaging: Tape & Reel (TR) Part Status: Obsolete FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 100V Current - Continuous Drain (Id) @ 25C: 20A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 49 mOhm @ 20A, 10V Vgs(th) (Max) @ Id: 4V @ 20A Gate Charge (Qg) (Max) @ Vgs: 16nC @ 10V Vgs (Max): 20V Input Capacitance (Ciss) (Max) @ Vds: 1090pF @ 50V Power Dissipation (Max): 44W (Tc) Operating Temperature: -55C ~ 175C (TJ) Mounting Type: Surface Mount Supplier Device Package: PG-TO252-3 Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63	1000 Order	1+: $0
497-14572-5-ND	STP25N10F7	STMicroelectronics	View more Series: DeepGATE, STripFET VII Packaging: Tube Part Status: Active FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 100V Current - Continuous Drain (Id) @ 25C: 25A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 35 mOhm @ 12.5A, 10V Vgs(th) (Max) @ Id: 4.5V @ 250A Gate Charge (Qg) (Max) @ Vgs: 14nC @ 10V Vgs (Max): 20V Input Capacitance (Ciss) (Max) @ Vds: 920pF @ 50V Power Dissipation (Max): 50W (Tc) Operating Temperature: -55C ~ 175C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220 Package / Case: TO-220-3	359 Order	1+: $1.3608 50+: $1.0958 100+: $0.9862 500+: $0.7671 1000+: $0.6356
IRFB5615PBF-ND	IRFB5615PBF	Infineon Technologies	View more Packaging: Tube Part Status: Active FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 150V Current - Continuous Drain (Id) @ 25C: 35A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 39 mOhm @ 21A, 10V Vgs(th) (Max) @ Id: 5V @ 100A Gate Charge (Qg) (Max) @ Vgs: 40nC @ 10V Vgs (Max): 20V Input Capacitance (Ciss) (Max) @ Vds: 1750pF @ 50V Power Dissipation (Max): 144W (Tc) Operating Temperature: -55C ~ 175C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220AB Package / Case: TO-220-3	11000 Order	--
296-37480-5-ND	CSD19531KCS	Texas Instruments	View more Series: NexFET Packaging: Tube Part Status: Active FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 100V Current - Continuous Drain (Id) @ 25C: 100A (Ta) Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Rds On (Max) @ Id, Vgs: 7.7 mOhm @ 60A, 10V Vgs(th) (Max) @ Id: 3.3V @ 250A Gate Charge (Qg) (Max) @ Vgs: 38nC @ 10V Vgs (Max): 20V Input Capacitance (Ciss) (Max) @ Vds: 3870pF @ 50V Power Dissipation (Max): 214W (Tc) Operating Temperature: -55C ~ 175C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220-3 Package / Case: TO-220-3	317 Order	--
497-10965-5-ND	STP8NM50N	STMicroelectronics	View more Series: MDmesh II Packaging: Tube Part Status: Active FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 500V Current - Continuous Drain (Id) @ 25C: 5A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 790 mOhm @ 2.5A, 10V Vgs(th) (Max) @ Id: 4V @ 250A Gate Charge (Qg) (Max) @ Vgs: 14nC @ 10V Vgs (Max): 25V Input Capacitance (Ciss) (Max) @ Vds: 364pF @ 50V Power Dissipation (Max): 45W (Tc) Operating Temperature: 150C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220AB Package / Case: TO-220-3	143 Order	1+: $1.4175 50+: $1.1411 100+: $1.027 500+: $0.7988 1000+: $0.6618
497-12367-ND	STU7NM60N	STMicroelectronics	View more Series: MDmesh II Packaging: Tube Part Status: Active FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 600V Current - Continuous Drain (Id) @ 25C: 5A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 900 mOhm @ 2.5A, 10V Vgs(th) (Max) @ Id: 4V @ 250A Gate Charge (Qg) (Max) @ Vgs: 14nC @ 10V Vgs (Max): 25V Input Capacitance (Ciss) (Max) @ Vds: 363pF @ 50V Power Dissipation (Max): 45W (Tc) Operating Temperature: 150C (TJ) Mounting Type: Through Hole Supplier Device Package: I-PAK Package / Case: TO-251-3 Short Leads, IPak, TO-251AA	149 Order	1+: $1.4616 75+: $1.1773 150+: $1.0596 525+: $0.8241 1050+: $0.6828
SUP70060E-GE3-N D	SUP70060E-GE3	Vishay Siliconix	View more Series: ThunderFET Packaging: Bulk Part Status: Active FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 100V Current - Continuous Drain (Id) @ 25C: 131A (Tc) Drive Voltage (Max Rds On, Min Rds On): 7.5V, 10V Rds On (Max) @ Id, Vgs: 5.8 mOhm @ 30A, 10V Vgs(th) (Max) @ Id: 4V @ 250A Gate Charge (Qg) (Max) @ Vgs: 81nC @ 10V Vgs (Max): 20V Input Capacitance (Ciss) (Max) @ Vds: 3330pF @ 50V Power Dissipation (Max): 200W (Tc) Operating Temperature: -55C ~ 175C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220AB Package / Case: TO-220-3	250 Order	--
497-14573-5-ND	STP45N10F7	STMicroelectronics	View more Series: DeepGATE, STripFET VII Packaging: Tube Part Status: Active FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 100V Current - Continuous Drain (Id) @ 25C: 45A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 18 mOhm @ 22.5A, 10V Vgs(th) (Max) @ Id: 4.5V @ 250A Gate Charge (Qg) (Max) @ Vgs: 25nC @ 10V Vgs (Max): 20V Input Capacitance (Ciss) (Max) @ Vds: 1640pF @ 50V Power Dissipation (Max): 60W (Tc) Operating Temperature: -55C ~ 175C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220 Package / Case: TO-220-3	353 Order	1+: $1.7325 50+: $1.3947 100+: $1.2552 500+: $0.9763 1000+: $0.8089
497-14832-5-ND	STF80N10F7	STMicroelectronics	View more Series: DeepGATE, STripFET VII Packaging: Tube Part Status: Active FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 100V Current - Continuous Drain (Id) @ 25C: 40A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 10 mOhm @ 40A, 10V Vgs(th) (Max) @ Id: 4.5V @ 250A Gate Charge (Qg) (Max) @ Vgs: 45nC @ 10V Vgs (Max): 20V Input Capacitance (Ciss) (Max) @ Vds: 3100pF @ 50V Power Dissipation (Max): 30W (Tc) Operating Temperature: -55C ~ 175C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220FP Package / Case: TO-220-3 Full Pack	84 Order	1+: $1.7892 50+: $1.4454 100+: $1.3008 500+: $1.0118 1000+: $0.8383
497-14834-5-ND	STP80N10F7	STMicroelectronics	View more Series: DeepGATE, STripFET VII Packaging: Tube Part Status: Active FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 100V Current - Continuous Drain (Id) @ 25C: 80A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 10 mOhm @ 40A, 10V Vgs(th) (Max) @ Id: 4.5V @ 250A Gate Charge (Qg) (Max) @ Vgs: 45nC @ 10V Vgs (Max): 20V Input Capacitance (Ciss) (Max) @ Vds: 3100pF @ 50V Power Dissipation (Max): 110W (Tc) Operating Temperature: -55C ~ 175C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220 Package / Case: TO-220-3	360 Order	1+: $1.8207 50+: $1.4671 100+: $1.3204 500+: $1.027 1000+: $0.8509
IRFB3206GPBF-ND	IRFB3206GPBF	Infineon Technologies	View more Series: HEXFET Packaging: Tube Part Status: Not For New Designs FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25C: 120A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 3 mOhm @ 75A, 10V Vgs(th) (Max) @ Id: 4V @ 150A Gate Charge (Qg) (Max) @ Vgs: 170nC @ 10V Vgs (Max): 20V Input Capacitance (Ciss) (Max) @ Vds: 6540pF @ 50V Power Dissipation (Max): 300W (Tc) Operating Temperature: -55C ~ 175C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220AB Package / Case: TO-220-3	65 Order	--
497-12564-5-ND	STF10NM60N	STMicroelectronics	View more Series: MDmesh II Packaging: Tube Part Status: Active FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 600V Current - Continuous Drain (Id) @ 25C: 10A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 550 mOhm @ 4A, 10V Vgs(th) (Max) @ Id: 4V @ 250A Gate Charge (Qg) (Max) @ Vgs: 19nC @ 10V Vgs (Max): 25V Input Capacitance (Ciss) (Max) @ Vds: 540pF @ 50V Power Dissipation (Max): 25W (Tc) Operating Temperature: -55C ~ 150C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220FP Package / Case: TO-220-3 Full Pack	891 Order	1+: $2.1231 50+: $1.7116 100+: $1.5405 500+: $1.1982 1000+: $0.9927
IRFB3207PBF-ND	IRFB3207PBF	Infineon Technologies	View more Series: HEXFET Packaging: Tube Part Status: Active FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 75V Current - Continuous Drain (Id) @ 25C: 170A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 4.5 mOhm @ 75A, 10V Vgs(th) (Max) @ Id: 4V @ 250A Gate Charge (Qg) (Max) @ Vgs: 260nC @ 10V Vgs (Max): 20V Input Capacitance (Ciss) (Max) @ Vds: 7600pF @ 50V Power Dissipation (Max): 330W (Tc) Operating Temperature: -55C ~ 175C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220AB Package / Case: TO-220-3	418 Order	--
FDB86102LZTR-ND	FDB86102LZ	ON Semiconductor	View more Series: PowerTrench Packaging: Tape & Reel (TR) Part Status: Active FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 100V Current - Continuous Drain (Id) @ 25C: 8.3A (Ta), 30A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Rds On (Max) @ Id, Vgs: 24 mOhm @ 8.3A, 10V Vgs(th) (Max) @ Id: 3V @ 250A Gate Charge (Qg) (Max) @ Vgs: 21nC @ 10V Vgs (Max): 20V Input Capacitance (Ciss) (Max) @ Vds: 1275pF @ 50V Power Dissipation (Max): 3.1W (Ta) Operating Temperature: -55C ~ 150C (TJ) Mounting Type: Surface Mount Supplier Device Package: TO-263AB Package / Case: TO-263-3, DPak (2 Leads + Tab), TO-263AB	800 Order	--
785-1615-5-ND	AOTF2910L	Alpha & Omega Semiconductor Inc.	View more Packaging: Tube Part Status: Active FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 100V Current - Continuous Drain (Id) @ 25C: 22A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Rds On (Max) @ Id, Vgs: 24 mOhm @ 20A, 10V Vgs(th) (Max) @ Id: 2.7V @ 250A Gate Charge (Qg) (Max) @ Vgs: 15nC @ 10V Vgs (Max): 20V Input Capacitance (Ciss) (Max) @ Vds: 1190pF @ 50V Power Dissipation (Max): 2.1W (Ta), 27W (Tc) Operating Temperature: -55C ~ 175C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220-3F Package / Case: TO-220-3 Full Pack	428 Order	--
IRFB4510PBF-ND	IRFB4510PBF	Infineon Technologies	View more Series: HEXFET Packaging: Tube Part Status: Active FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 100V Current - Continuous Drain (Id) @ 25C: 62A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 13.5 mOhm @ 37A, 10V Vgs(th) (Max) @ Id: 4V @ 100A Gate Charge (Qg) (Max) @ Vgs: 87nC @ 10V Vgs (Max): 20V Input Capacitance (Ciss) (Max) @ Vds: 3180pF @ 50V Power Dissipation (Max): 140W (Tc) Operating Temperature: -55C ~ 175C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220AB Package / Case: TO-220-3	963 Order	--
IPP126N10N3GXKS A1-ND	IPP126N10N3GXKS A1	Infineon Technologies	View more Series: OptiMOS Packaging: Tube Part Status: Active FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 100V Current - Continuous Drain (Id) @ 25C: 58A (Tc) Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Rds On (Max) @ Id, Vgs: 12.3 mOhm @ 46A, 10V Vgs(th) (Max) @ Id: 3.5V @ 46A Gate Charge (Qg) (Max) @ Vgs: 35nC @ 10V Vgs (Max): 20V Input Capacitance (Ciss) (Max) @ Vds: 2500pF @ 50V Power Dissipation (Max): 94W (Tc) Operating Temperature: -55C ~ 175C (TJ) Mounting Type: Through Hole Supplier Device Package: PG-TO-220-3 Package / Case: TO-220-3	731 Order	1+: $1.0143 10+: $0.8984 100+: $0.71 500+: $0.5506 1000+: $0.4347
DMNH10H028SCTDI -5-ND	DMNH10H028SCT	Diodes Incorporated	View more Series: Automotive, AEC-Q101 Packaging: Tube Part Status: Active FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 100V Current - Continuous Drain (Id) @ 25C: 60A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 28 mOhm @ 20A, 10V Vgs(th) (Max) @ Id: 4V @ 250A Gate Charge (Qg) (Max) @ Vgs: 31.9nC @ 10V Vgs (Max): 20V Input Capacitance (Ciss) (Max) @ Vds: 1942pF @ 50V Power Dissipation (Max): 2.8W (Ta) Operating Temperature: -55C ~ 175C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220AB Package / Case: TO-220-3	149 Order	1+: $1.0647 50+: $0.852 100+: $0.7455 500+: $0.5782 1000+: $0.4564

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