Allicdata Part #: | IRFU4620PBF-ND |
Manufacturer Part#: |
IRFU4620PBF |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Infineon Technologies |
Short Description: | MOSFET N-CH 200V 24A IPAK |
More Detail: | N-Channel 200V 24A (Tc) 144W (Tc) Through Hole IPA... |
DataSheet: | IRFU4620PBF Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
Series: | HEXFET® |
Packaging: | Tube |
Part Status: | Obsolete |
FET Type: | N-Channel |
Technology: | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): | 200V |
Current - Continuous Drain (Id) @ 25°C: | 24A (Tc) |
Drive Voltage (Max Rds On, Min Rds On): | 10V |
Rds On (Max) @ Id, Vgs: | 78 mOhm @ 15A, 10V |
Vgs(th) (Max) @ Id: | 5V @ 100µA |
Gate Charge (Qg) (Max) @ Vgs: | 38nC @ 10V |
Vgs (Max): | ±20V |
Input Capacitance (Ciss) (Max) @ Vds: | 1710pF @ 50V |
FET Feature: | -- |
Power Dissipation (Max): | 144W (Tc) |
Operating Temperature: | -55°C ~ 175°C (TJ) |
Mounting Type: | Through Hole |
Supplier Device Package: | IPAK (TO-251) |
Package / Case: | TO-251-3 Short Leads, IPak, TO-251AA |
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IRFU4620PBF is an advanced MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor). It is a single-channel enhancement-mode transistor and is used in a variety of applications including switching and amplifying signals, powering linear and switched-mode power supplies and amplifying high-voltage and low-power circuits. It is often used in automotive, industrial and consumer electronics.
The IRFU4620PBF operates on 70V, with a specified peak drain current of 2.8A, and a specified peak drain current of 2.6A. It is rated at a maximum power rating of 28W and has an on-resistance (Rds) of 0.2 Ohm. This is one of the lowest on-resistances in the category of MOSFETs, which makes it suitable for use in high-efficiency switching power applications.
The IRFU4620PBF device is manufactured using an advanced process technology called Super Junction. This technology is designed to improve power range, efficiency and reliability of the device compared to other MOSFETs. It also uses an encapsulated package to protect the device from environmental conditions and electrical noise.
The working principle of the IRFU4620PBF is based on the basic two-terminal MOSFET structure. When a voltage is applied to the gate terminal and a ground is applied to the source terminal, the gate-source voltage (Vgs) produces a strong, inversion layer of charge carriers called "electrons" in the region between the gate and drain. With the increase of gate voltage, the electrons are induced to further penetrate the channel and further reduce the channel resistance. This further reduces the channel resistance and causes the depletion of electrons in the channel. The result is an increase in the switched-on current and channel resistance.
The IRFU4620PBF device is widely used in a variety of applications such as switching, power supply, switching power supplies, amplifiers, buzzers, LED drives and high-power inverters due to its small size and high efficiency. It is also capable of driving highly capacitive loads and has good protection against short-circuits, electrostatic discharge and power surges.
The IRFU4620PBF is suitable for a variety of applications such as automotive, industrial, consumer, lighting and power management. It is designed to meet the stringent requirements such as switching performance, safety, and accuracy in all the above mentioned electronics. The device is available in a variety of package types, including the TO-252 package that offers a large surface area for heat dissipation. The IRFU4620PBF is also available in high-temperature and low-port variants.
The IRFU4620PBF device is designed to provide a highly reliable, efficient and economical solution to the challenging requirements of a variety of applications. It is highly suitable for a variety of power and signal switching applications due to its robustness and low power consumption. It is also capable of driving high-power loads with great efficiency, making it ideal for use in power management applications.
The specific data is subject to PDF, and the above content is for reference
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