Allicdata Part #: | 497-14572-5-ND |
Manufacturer Part#: |
STP25N10F7 |
Price: | $ 1.50 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | STMicroelectronics |
Short Description: | MOSFET N-CH 100V 25A TO-220 |
More Detail: | N-Channel 100V 25A (Tc) 50W (Tc) Through Hole TO-2... |
DataSheet: | STP25N10F7 Datasheet/PDF |
Quantity: | 359 |
1 +: | $ 1.36080 |
50 +: | $ 1.09582 |
100 +: | $ 0.98620 |
500 +: | $ 0.76706 |
1000 +: | $ 0.63557 |
Vgs(th) (Max) @ Id: | 4.5V @ 250µA |
Package / Case: | TO-220-3 |
Supplier Device Package: | TO-220 |
Mounting Type: | Through Hole |
Operating Temperature: | -55°C ~ 175°C (TJ) |
Power Dissipation (Max): | 50W (Tc) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 920pF @ 50V |
Vgs (Max): | ±20V |
Gate Charge (Qg) (Max) @ Vgs: | 14nC @ 10V |
Series: | DeepGATE™, STripFET™ VII |
Rds On (Max) @ Id, Vgs: | 35 mOhm @ 12.5A, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 10V |
Current - Continuous Drain (Id) @ 25°C: | 25A (Tc) |
Drain to Source Voltage (Vdss): | 100V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Active |
Packaging: | Tube |
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The STP25N10F7 is a N-Channel MOSFET device manufactured by STMicroelectronics. This device is a high-performance power MOSFET, specifically designed to reduce voltage drop, increase switching performance and reduce power losses in applications such as switching converters and high-frequency switch-mode power supplies. With its low on-resistance, low capacitance and fast switching time, this N-Channel MOSFET is ideal for use in high-power applications.This device is available in two different packages, a TO-220 and an SO-8, both with a maximum drain current of 10 A. The device has a Gate threshold voltage of 4.5 V and a 25-40 mOhm on-resistance. It also has a maximum drain-source voltage rating of 100 V and maximum drain current of 25 A. The device has a very low gate charge, making it suitable for use in high-frequency applications.The STP25N10F7 is mainly used in switching converters and high-frequency switch-mode power supplies, such as DC/DC converters, AC/DC adapters and power inverters. It is also used in application fields such as lighting, industrial motors, industrial automation, medical devices and renewable energy.The working principle of an N-Channel MOSFET is based on the MOSFET construction. It consists of four main components: the source, the drain, the gate, and the substrate. The source is typically connected to ground, while the drain is connected to the load. The gate is connected to a power supply or control signal, and the substrate is connected to the source.When a voltage is applied to the gate, it creates an electrostatic field that extends between the gate and the substrate. This causes the electrons in the substrate to be pulled towards the gate, and thus the resistance between the source and the drain is decreased, allowing current to flow from the source to the drain. This is known as the "enhancement mode" operation.If the voltage applied to the gate is decreased, the electrostatic field created by the gate will be removed, and the electrons will no longer be attracted towards the gate. This causes an increase in the resistance between the source and the drain and stops current from flowing, thus achieving a "depletion mode" operation.The STP25N10F7 is an enhancement mode N-Channel MOSFET that is designed for fast switching, low on-resistance and low gate charge. It is used in applications such as switching converters and high-frequency switch-mode power supplies. This device is able to reduce voltage drop, increase switching performance and reduce power losses, thereby providing improved reliability and higher efficiency in power supplies.
The specific data is subject to PDF, and the above content is for reference
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