Allicdata Part #: | IRFR4615PBF-ND |
Manufacturer Part#: |
IRFR4615PBF |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Infineon Technologies |
Short Description: | MOSFET N-CH 150V 33A D-PAK |
More Detail: | N-Channel 150V 33A (Tc) 144W (Tc) Surface Mount D-... |
DataSheet: | IRFR4615PBF Datasheet/PDF |
Quantity: | 1000 |
Series: | HEXFET® |
Packaging: | Tube |
Part Status: | Discontinued at Digi-Key |
FET Type: | N-Channel |
Technology: | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): | 150V |
Current - Continuous Drain (Id) @ 25°C: | 33A (Tc) |
Drive Voltage (Max Rds On, Min Rds On): | 10V |
Rds On (Max) @ Id, Vgs: | 42 mOhm @ 21A, 10V |
Vgs(th) (Max) @ Id: | 5V @ 100µA |
Gate Charge (Qg) (Max) @ Vgs: | 26nC @ 10V |
Vgs (Max): | ±20V |
Input Capacitance (Ciss) (Max) @ Vds: | 1750pF @ 50V |
FET Feature: | -- |
Power Dissipation (Max): | 144W (Tc) |
Operating Temperature: | -55°C ~ 175°C (TJ) |
Mounting Type: | Surface Mount |
Supplier Device Package: | D-Pak |
Package / Case: | TO-252-3, DPak (2 Leads + Tab), SC-63 |
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The IRFR4615PBF is a MOSFET that has a drain-source breakdown voltage (BVdss) of 60V. It also has a maximum drain current of 42A that can be carried over a -55°C to 175°C junction temperature range. The IRFR4615PBF is a PowerTrench MOSFET with an RDS(on) rating of 15.6mOhm at 10V. This means that it is suitable for power management applications where high efficiency or low power loss is a top priority.
Application Field
Due to its impressive specifications, the IRFR4615PBF is an ideal MOSFET for a variety of applications. It is frequently used in DC-DC Converters, Power Supplies, Switch Mode Applications, and other power management applications. It is also highly suitable for automotive systems that must be extremely reliable and efficient.
Working Principle
The IRFR4615PBF is a trench-gate HEXFET MOSFET. This type of MOSFET is based on the insulated-gate field-effect transistor (IGFET) principle. A MOSFET functions by applying a voltage to the gate terminal. This creates a strong electric field which will modulate the conductivity of the MOSFET’s channel. When the gate voltage exceeds a certain threshold, the channel can conduct current across the drain-source line. By varying the voltage applied to the gate terminal, the IRFR4615PBF can be used to switch electronic signals with high precision.
The IRFR4615PBF also has a number of advantages over conventional FETs. For example, its PowerTrench gate construction enables it to operate at extremely high switching frequencies. This makes the IRFR4615PBF an ideal MOSFET for applications that require rapid switching times. Additionally, the IRFR4615PBF has a very low on-state resistance (RDS(on)) which improves efficiency.
The IRFR4615PBF is also very reliable. It has a maximum junction temperature of 175°C, so it can handle extended periods of high-temperature operation. Additionally, the IRFR4615PBF is designed to be highly tolerant to transients and ESD events, making it suitable for use in high-voltage and high-frequency applications.
The IRFR4615PBF is a robust and reliable MOSFET that is suitable for a variety of power management applications. It is an ideal choice for electronic systems that require high efficiency and low power losses, such as DC-DC converters and switch-mode power supplies. Additionally, its high-temperature and transient-tolerant design make it suitable for use in automotive systems and other high-voltage, high-frequency applications.
The specific data is subject to PDF, and the above content is for reference
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