FDB86102LZ Discrete Semiconductor Products

Vgs(th) (Max) @ Id:	3V @ 250µA
Package / Case:	TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Supplier Device Package:	TO-263AB
Mounting Type:	Surface Mount
Operating Temperature:	-55°C ~ 150°C (TJ)
Power Dissipation (Max):	3.1W (Ta)
FET Feature:	--
Input Capacitance (Ciss) (Max) @ Vds:	1275pF @ 50V
Vgs (Max):	±20V
Gate Charge (Qg) (Max) @ Vgs:	21nC @ 10V
Series:	PowerTrench®
Rds On (Max) @ Id, Vgs:	24 mOhm @ 8.3A, 10V
Drive Voltage (Max Rds On, Min Rds On):	4.5V, 10V
Current - Continuous Drain (Id) @ 25°C:	8.3A (Ta), 30A (Tc)
Drain to Source Voltage (Vdss):	100V
Technology:	MOSFET (Metal Oxide)
FET Type:	N-Channel
Part Status:	Active
Packaging:	Tape & Reel (TR)

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FDB86102LZ Application Field and Working Principle

FDB86102LZ is a traditionally designed, single N-channel enhancement mode Field-Effect Transistor (FET) which operates by using voltage, and not current, to control an electric field in a semiconductor material for transistors. The FDB86102LZ primarily consists of a Source, a Body and a Drain, with a control Gate (G) in the middle for switching.

Types of FETs

FETs are a type of transistor, which is an electronic component that are often used to switch current in electronic circuits. There are various types of FETs available, with different characteristics that ensures they are suited for specific application fields:MOSFETs: Metal-Oxide-Semiconductor Field-Effect Transistors are the most common type of FETs, used in a wide range of applications. MOSFETs are capable of operating at high switching speeds, making them well suited for high-frequency applications, such as power electronics and audio amplifier circuits.JFETs: Junction Field-Effect Transistors are the simplest type of FETs, used for low-frequency applications, such as variable-gain amplifiers.IGFETs: Insulated-Gate Field-Effect Transistors are a type of FET designed to handle higher currents and voltages than typical MOSFETs.

FDB86102LZ Features

The FDB86102LZ is a power MOSFET which is designed for the purpose of switching applications in low voltage and medium power circuits. It utilizes n-channel junction to feature several advantages:-Low On-State Resistance (RDS_on) enables the switching of large currents.-Low Gate Threshold Voltage (V_GS) enables the FDB86102LZ to be driven by low-voltage circuits.-Fast Switching Times ensures minimal wasted power while switching.

FDB86102LZ Applications

Due to the FDB86102LZ’s design and features, the transistor is commonly used in low-voltage (up to 100V) and medium-power (~50W) circuits. Some common applications for the FDB86102LZ include: -DC-DC Converters -Battery Powered Electronics-Charger Circuits-Switch Mode Power Supplies-Motor Speed Control-Audio Amplifiers

Operation Principle of FDB86102LZ

The operation of the FDB86102LZ is based on the principle of gate control. When a small voltage is applied to the gate (known as V_GS), an electric field is generated in the semiconductor material between the gate and source. This electric field modulates the conductivity of the channel between the drain and source, allowing current to flow when the voltage reaches a certain threshold.When the voltage applied to the gate is increased, the electric field increases, narrowing the channel and increasing resistance. This reduces the current flowing through the FET, eventually turning it off when the electric field is large enough. Conversely, when the gate voltage is decreased, the electric field is reduced, allowing current to flow through. The FET will remain on until the gate voltage approaches 0V.

Conclusion

The FDB86102LZ is a single N-Channel enhancement mode FET designed for high-power switching applications. The transistor is capable of handling up to 100V and 50W, making it suitable for switching, DC-DC converters, battery powered electronics and motor speed control, among other applications. Its operation is based on the principle of gate control and is capable of switching large currents without wasting power.

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