STP80N10F7

Vgs(th) (Max) @ Id:	4.5V @ 250µA
Package / Case:	TO-220-3
Supplier Device Package:	TO-220
Mounting Type:	Through Hole
Operating Temperature:	-55°C ~ 175°C (TJ)
Power Dissipation (Max):	110W (Tc)
FET Feature:	--
Input Capacitance (Ciss) (Max) @ Vds:	3100pF @ 50V
Vgs (Max):	±20V
Gate Charge (Qg) (Max) @ Vgs:	45nC @ 10V
Series:	DeepGATE™, STripFET™ VII
Rds On (Max) @ Id, Vgs:	10 mOhm @ 40A, 10V
Drive Voltage (Max Rds On, Min Rds On):	10V
Current - Continuous Drain (Id) @ 25°C:	80A (Tc)
Drain to Source Voltage (Vdss):	100V
Technology:	MOSFET (Metal Oxide)
FET Type:	N-Channel
Part Status:	Active
Packaging:	Tube

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Introduction

The STP80N10F7 is a N-channel Field Effect Transistor (FET) that belongs to the family of single transistor FETs. It is used in different electronic devices and applications, such as personal computers (PCs), gaming consoles, and other consumer electronics. The device is designed to reduce the power losses of these devices and increase the speed of current and voltage transition time. This article will discuss the application field and working principle of this device.

Application and Use

The STP80N10F7 is designed to be used in a range of applications, including power supply, switching and protection circuits, motor control circuits, and communication circuits. This device provides a wide range of current control, dynamic performance, and enhanced switching speed. It is also suitable for controlling high current and high voltage power supplies. The device is widely used in power-supply circuits, as it allows high switching frequencies and is able to reduce conduction resistance. The device can also be used in motor control circuits, such as those used in robotics or industrial automation. In these applications, the STP80N10F7 is able to control the current flow and protect against any potential overloads.The device is also well suited for communication circuits, as it can operate at frequencies up to 20 MHz. This enables it to respond quickly to changes in signal level, ensuring a stable and reliable connection.

Working Principle

The STP80N10F7 is a voltage-controlled device. It functions by passing current from a source to a drain when it is supplied with a gate voltage. The gate voltage provides the control to the transistor, as it can be used to increase or decrease the amount of current passing through the device.When a gate voltage is applied, electrons within the gate become polarized and establish a channel of current between the source and the drain. This channel is directly proportional to the amount of voltage applied to the gate. The device is also able to reduce the amount of power consumed by the circuit due to its low on-resistance. The low on-resistance enables the device to dissipate less power than other types of transistors, and also allows higher current to be switched with less power loss.

Conclusion

The STP80N10F7 is a N-Channel Field Effect Transistor (FET) that is widely used in different applications, such as power-supply circuits, motor control circuits, and communication circuits. Its wide voltage control range and high switching speed makes it ideal for controlling high voltage and current power supplies. The device is also able to reduce the amount of power consumed by the circuit due to its low on-resistance. In conclusion, the STP80N10F7 is an ideal single transistor FET for various applications.

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