IRFS5620TRLPBF

Series:	--
Packaging:	Tape & Reel (TR)
Part Status:	Obsolete
FET Type:	N-Channel
Technology:	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):	200V
Current - Continuous Drain (Id) @ 25°C:	24A (Tc)
Drive Voltage (Max Rds On, Min Rds On):	10V
Rds On (Max) @ Id, Vgs:	77.5 mOhm @ 15A, 10V
Vgs(th) (Max) @ Id:	5V @ 100µA
Gate Charge (Qg) (Max) @ Vgs:	38nC @ 10V
Vgs (Max):	±20V
Input Capacitance (Ciss) (Max) @ Vds:	1710pF @ 50V
FET Feature:	--
Power Dissipation (Max):	144W (Tc)
Operating Temperature:	-55°C ~ 175°C (TJ)
Mounting Type:	Surface Mount
Supplier Device Package:	D2PAK
Package / Case:	TO-263-3, D²Pak (2 Leads + Tab), TO-263AB

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<p>Transistors are widely used in many different types of electrical and electronic circuits. One of the commonly used types is the FET (Field-Effect Transistor) and its derivatives. IRFS5620TRLPBF is one such FET, which is a single N-Channel Enhancement Mode MOSFET (Metal Oxide Semiconductor Field-Effect Transistor).</p><p>The IRFS5620TRLPBF is a low-ohm, low-power MOSFET with an on-state resistance of just 0.06 ohms and a maximum drain-source voltage of 32V. It also has a high current carrying capacity of 45A, making it suitable for many applications where power and space are of prime concern. It is also particularly suited to switching applications, as it has a very low turn-on voltage and desirable fast switching characteristics.</p><p>The IRFS5620TRLPBF has a wide range of applications, including motor drive circuits, solenoid and lamp drivers, white goods, power supplies, and battery protection systems. It is also very suitable for use in power rails, switch mode and Class-D audio amplifier applications, as well as in DC-DC converters, LED lighting, and high current demands.</p><p>The working principle of the IRFS5620TRLPBF is based on the gate-source voltage that is applied to it. When this gate-source voltage reaches the threshold voltage, the MOSFET will turn on or off, which is determined by the voltage\'s polarity. When the gate-source voltage is negative, the MOSFET will be off, while when it is positive, it will be on. This allows the current to flow or be blocked between the drain and the source.</p><p>The IRFS5620TRLPBF also has a thermal protection system that helps protect it from overheating. This is accomplished through a thermal shutdown system that will shut off the FET when it exceeds a certain temperature to prevent damage to the device.</p><p>In short, the IRFS5620TRLPBF is a single N-channel enhancement mode MOSFET that is suitable for many power and switching applications. It has a low on-state resistance, high current carrying capability, and attractive fast switching characteristics. Its wide range of application areas includes motor drive circuits, solenoid and lamp drivers, white goods, power supplies, and battery protection systems. Its working principle is based on the control of its gate-source voltage, which can be switched from positive to negative depending on the application. Lastly, it also has a thermal protection system to prevent overheating.</p>

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