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Allicdata Part#	Mft.Part#	Company	Spec.	QTY.	Pricing(USD)
APTC60HM70RT3G- ND	APTC60HM70RT3G	Microsemi Corporation	View more Series: CoolMOS Packaging: Bulk Part Status: Active FET Type: 4 N-Channel (H-Bridge) + Bridge Rectifier FET Feature: Standard Drain to Source Voltage (Vdss): 600V Current - Continuous Drain (Id) @ 25C: 39A Rds On (Max) @ Id, Vgs: 70 mOhm @ 39A, 10V Vgs(th) (Max) @ Id: 3.9V @ 2.7mA Gate Charge (Qg) (Max) @ Vgs: 259nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 7000pF @ 25V Power - Max: 250W Operating Temperature: -40C ~ 150C (TJ) Package / Case: SP3 Supplier Device Package: SP3	1000 Order	100+: $32.1805
RJM0306JSP-01#J 0-ND	RJM0306JSP-01#J 0	Renesas Electronics America	View more Packaging: Tube Part Status: Active FET Type: 2 N and 2 P-Channel (H-Bridge) FET Feature: Logic Level Gate, 4V Drive Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25C: 3.5A Rds On (Max) @ Id, Vgs: 65 mOhm @ 2A, 10V Gate Charge (Qg) (Max) @ Vgs: 5nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 290pF @ 10V Power - Max: 2.2W Mounting Type: Surface Mount Package / Case: 8-SOIC (0.154", 3.90mm Width) Supplier Device Package: 8-SOP	1000 Order	1+: $0
CSD86336Q3D-ND	CSD86336Q3D	Texas Instruments	View more Series: NexFET Part Status: Active FET Type: 2 N-Channel (Half Bridge) FET Feature: Logic Level Gate, 5V Drive Drain to Source Voltage (Vdss): 25V Current - Continuous Drain (Id) @ 25C: 20A (Ta) Rds On (Max) @ Id, Vgs: 9.1 mOhm @ 20A, 5V, 3.4 mOhm @ 20A, 5V Vgs(th) (Max) @ Id: 1.9V @ 250A, 1.6V @ 250A Gate Charge (Qg) (Max) @ Vgs: 3.8nC @ 45V, 7.4nC @ 45V Input Capacitance (Ciss) (Max) @ Vds: 494pF @ 12.5V, 970pF @ 12.5V Power - Max: 6W Operating Temperature: -55C ~ 125C Mounting Type: Surface Mount Package / Case: 8-PowerTDFN Supplier Device Package: 8-VSON (3.3x3.3)	1000 Order	--
296-49054-2-ND	CSD86336Q3DT	Texas Instruments	View more Series: NexFET Packaging: Tape & Reel (TR) Part Status: Active FET Type: 2 N-Channel (Half Bridge) FET Feature: Logic Level Gate, 5V Drive Drain to Source Voltage (Vdss): 25V Current - Continuous Drain (Id) @ 25C: 20A (Ta) Rds On (Max) @ Id, Vgs: 9.1 mOhm @ 20A, 5V, 3.4 mOhm @ 20A, 5V Vgs(th) (Max) @ Id: 1.9V @ 250A, 1.6V @ 250A Gate Charge (Qg) (Max) @ Vgs: 3.8nC @ 45V, 7.4nC @ 45V Input Capacitance (Ciss) (Max) @ Vds: 494pF @ 12.5V, 970pF @ 12.5V Power - Max: 6W Operating Temperature: -55C ~ 125C Mounting Type: Surface Mount Package / Case: 8-PowerTDFN Supplier Device Package: 8-VSON (3.3x3.3)	500 Order	250+: $0.8738 500+: $0.7645 750+: $0.6903 1250+: $0.6335
RJM0603JSC-00#1 2-ND	RJM0603JSC-00#1 2	Renesas Electronics America	View more Series: Automotive, AEC-Q101 Packaging: Tray Part Status: Active FET Type: 3 N and 3 P-Channel (3-Phase Bridge) FET Feature: Logic Level Gate, 4.5V Drive Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25C: 20A Rds On (Max) @ Id, Vgs: 20 mOhm @ 10A, 10V Vgs(th) (Max) @ Id: 2.5V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 43nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 2600pF @ 10V Power - Max: 54W Operating Temperature: 175C Mounting Type: Surface Mount Package / Case: 20-SOIC (0.433", 11.00mm Width) Exposed Pad Supplier Device Package: 20-HSOP	1000 Order	1+: $0
CSD86356Q5D-ND	CSD86356Q5D	Texas Instruments	View more Series: NexFET Packaging: Tape & Reel (TR) Part Status: Active FET Type: 2 N-Channel (Half Bridge) FET Feature: Logic Level Gate, 5V Drive Drain to Source Voltage (Vdss): 25V Current - Continuous Drain (Id) @ 25C: 40A (Ta) Rds On (Max) @ Id, Vgs: 4.5 mOhm @ 20A, 5V, 0.8 mOhm @ 20A, 5V Vgs(th) (Max) @ Id: 1.85V @ 250A, 1.5V @ 250A Gate Charge (Qg) (Max) @ Vgs: 7.9nC @ 4.5V, 19.3nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 1.04nF @ 12.5V, 2.51nF @ 12.5V Power - Max: 12W (Ta) Operating Temperature: -55C ~ 150C (TJ) Mounting Type: Surface Mount Package / Case: 8-PowerTDFN Supplier Device Package: 8-VSON-CLIP (5x6)	1000 Order	--
296-49071-2-ND	CSD86356Q5DT	Texas Instruments	View more Series: NexFET Packaging: Tape & Reel (TR) Part Status: Active FET Type: 2 N-Channel (Half Bridge) FET Feature: Logic Level Gate, 5V Drive Drain to Source Voltage (Vdss): 25V Current - Continuous Drain (Id) @ 25C: 40A (Ta) Rds On (Max) @ Id, Vgs: 4.5 mOhm @ 20A, 5V, 0.8 mOhm @ 20A, 5V Vgs(th) (Max) @ Id: 1.85V @ 250A, 1.5V @ 250A Gate Charge (Qg) (Max) @ Vgs: 7.9nC @ 4.5V, 19.3nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 1.04nF @ 12.5V, 2.51nF @ 12.5V Power - Max: 12W (Ta) Operating Temperature: -55C ~ 150C (TJ) Mounting Type: Surface Mount Package / Case: 8-PowerTDFN Supplier Device Package: 8-VSON-CLIP (5x6)	500 Order	250+: $1.3693 500+: $1.1982 750+: $1.0818 1250+: $0.9927
RJM0603JSC-00#1 3-ND	RJM0603JSC-00#1 3	Renesas Electronics America	View more Series: Automotive, AEC-Q101 Part Status: Obsolete FET Type: 3 N and 3 P-Channel (3-Phase Bridge) FET Feature: Logic Level Gate, 4.5V Drive Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25C: 20A Rds On (Max) @ Id, Vgs: 20 mOhm @ 10A, 10V Vgs(th) (Max) @ Id: 2.5V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 43nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 2600pF @ 10V Power - Max: 54W Operating Temperature: 175C Mounting Type: Surface Mount Package / Case: 20-SOIC (0.433", 11.00mm Width) Exposed Pad Supplier Device Package: 20-HSOP	1000 Order	1+: $0
917-1183-2-ND	EPC2103	EPC	View more Series: eGaN Packaging: Tape & Reel (TR) Part Status: Active FET Type: 2 N-Channel (Half Bridge) FET Feature: GaNFET (Gallium Nitride) Drain to Source Voltage (Vdss): 80V Current - Continuous Drain (Id) @ 25C: 28A Rds On (Max) @ Id, Vgs: 5.5 mOhm @ 20A, 5V Vgs(th) (Max) @ Id: 2.5V @ 7mA Gate Charge (Qg) (Max) @ Vgs: 6.5nC @ 5V Input Capacitance (Ciss) (Max) @ Vds: 760pF @ 40V Operating Temperature: -40C ~ 150C (TJ) Mounting Type: Surface Mount Package / Case: Die Supplier Device Package: Die	9500 Order	500+: $3.4812
917-1182-2-ND	EPC2102	EPC	View more Series: eGaN Packaging: Tape & Reel (TR) Part Status: Active FET Type: 2 N-Channel (Half Bridge) FET Feature: GaNFET (Gallium Nitride) Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25C: 23A Rds On (Max) @ Id, Vgs: 4.4 mOhm @ 20A, 5V Vgs(th) (Max) @ Id: 2.5V @ 7mA Gate Charge (Qg) (Max) @ Vgs: 6.8nC @ 5V Input Capacitance (Ciss) (Max) @ Vds: 830pF @ 30V Operating Temperature: -40C ~ 150C (TJ) Mounting Type: Surface Mount Package / Case: Die Supplier Device Package: Die	9500 Order	500+: $3.4363
917-EPC2105ENGR TR-ND	EPC2105ENGRT	EPC	View more Series: eGaN Packaging: Tape & Reel (TR) Part Status: Active FET Type: 2 N-Channel (Half Bridge) FET Feature: GaNFET (Gallium Nitride) Drain to Source Voltage (Vdss): 80V Current - Continuous Drain (Id) @ 25C: 9.5A Rds On (Max) @ Id, Vgs: 14.5 mOhm @ 20A, 5V Vgs(th) (Max) @ Id: 2.5V @ 2.5mA Gate Charge (Qg) (Max) @ Vgs: 2.5nC @ 5V Input Capacitance (Ciss) (Max) @ Vds: 300pF @ 40V Operating Temperature: -40C ~ 150C (TJ) Mounting Type: Surface Mount Package / Case: Die Supplier Device Package: Die	5500 Order	500+: $3.5149
917-EPC2104ENGR TR-ND	EPC2104ENGRT	EPC	View more Series: eGaN Packaging: Tape & Reel (TR) Part Status: Active FET Type: 2 N-Channel (Half Bridge) FET Feature: GaNFET (Gallium Nitride) Drain to Source Voltage (Vdss): 100V Current - Continuous Drain (Id) @ 25C: 23A Rds On (Max) @ Id, Vgs: 6.3 mOhm @ 20A, 5V Vgs(th) (Max) @ Id: 2.5V @ 5.5mA Gate Charge (Qg) (Max) @ Vgs: 7nC @ 5V Input Capacitance (Ciss) (Max) @ Vds: 800pF @ 50V Operating Temperature: -40C ~ 150C (TJ) Mounting Type: Surface Mount Package / Case: Die Supplier Device Package: Die	1000 Order	500+: $3.5374
APTC60BBM24T3G- ND	APTC60BBM24T3G	Microsemi Corporation	View more Series: CoolMOS Packaging: Bulk Part Status: Active FET Type: 2 N-Channel (Half Bridge) FET Feature: Standard Drain to Source Voltage (Vdss): 600V Current - Continuous Drain (Id) @ 25C: 95A Rds On (Max) @ Id, Vgs: 24 mOhm @ 47.5A, 10V Vgs(th) (Max) @ Id: 3.9V @ 5mA Gate Charge (Qg) (Max) @ Vgs: 300nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 14400pF @ 25V Power - Max: 462W Operating Temperature: -40C ~ 150C (TJ) Package / Case: SP3 Supplier Device Package: SP3	1000 Order	100+: $42.3911
917-1184-2-ND	EPC2104	EPC	View more Series: eGaN Packaging: Tape & Reel (TR) Part Status: Active FET Type: 2 N-Channel (Half Bridge) FET Feature: GaNFET (Gallium Nitride) Drain to Source Voltage (Vdss): 100V Current - Continuous Drain (Id) @ 25C: 23A Rds On (Max) @ Id, Vgs: 6.3 mOhm @ 20A, 5V Vgs(th) (Max) @ Id: 2.5V @ 5.5mA Gate Charge (Qg) (Max) @ Vgs: 7nC @ 5V Input Capacitance (Ciss) (Max) @ Vds: 800pF @ 50V Operating Temperature: -40C ~ 150C (TJ) Mounting Type: Surface Mount Package / Case: Die Supplier Device Package: Die	9500 Order	500+: $3.5374
APTM100H45STG-N D	APTM100H45STG	Microsemi Corporation	View more Packaging: Bulk Part Status: Active FET Type: 4 N-Channel (H-Bridge) FET Feature: Standard Drain to Source Voltage (Vdss): 1000V (1kV) Current - Continuous Drain (Id) @ 25C: 18A Rds On (Max) @ Id, Vgs: 540 mOhm @ 9A, 10V Vgs(th) (Max) @ Id: 5V @ 2.5mA Gate Charge (Qg) (Max) @ Vgs: 154nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 4350pF @ 25V Power - Max: 357W Operating Temperature: -40C ~ 150C (TJ) Mounting Type: Chassis Mount Package / Case: SP4 Supplier Device Package: SP4	8 Order	1+: $88.2819 10+: $82.5097 25+: $79.6243
APTC90AM60T1G-N D	APTC90AM60T1G	Microsemi Corporation	View more Series: CoolMOS Packaging: Tray Part Status: Last Time Buy FET Type: 2 N-Channel (Half Bridge) FET Feature: Super Junction Drain to Source Voltage (Vdss): 900V Current - Continuous Drain (Id) @ 25C: 59A Rds On (Max) @ Id, Vgs: 60 mOhm @ 52A, 10V Vgs(th) (Max) @ Id: 3.5V @ 6mA Gate Charge (Qg) (Max) @ Vgs: 540nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 13600pF @ 100V Power - Max: 462W Operating Temperature: -40C ~ 150C (TJ) Mounting Type: Chassis Mount Package / Case: SP1 Supplier Device Package: SP1	1000 Order	100+: $43.6097
APTC60HM45SCTG- ND	APTC60HM45SCTG	Microsemi Corporation	View more Series: CoolMOS Packaging: Bulk Part Status: Active FET Type: 4 N-Channel (H-Bridge) FET Feature: Super Junction Drain to Source Voltage (Vdss): 600V Current - Continuous Drain (Id) @ 25C: 49A Rds On (Max) @ Id, Vgs: 45 mOhm @ 22.5A, 10V Vgs(th) (Max) @ Id: 3.9V @ 3mA Gate Charge (Qg) (Max) @ Vgs: 150nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 7200pF @ 25V Power - Max: 250W Operating Temperature: -40C ~ 150C (TJ) Mounting Type: Chassis Mount Package / Case: SP4 Supplier Device Package: SP4	1000 Order	100+: $66.7403
TPCL4203(TE85LF )-ND	TPCL4203(TE85L, F)	Toshiba Semiconductor and Storage	View more Packaging: Tape & Reel (TR) Part Status: Obsolete FET Type: 2 N-Channel (Half Bridge) FET Feature: Standard Vgs(th) (Max) @ Id: 1.2V @ 200A Input Capacitance (Ciss) (Max) @ Vds: 685pF @ 10V Power - Max: 500mW Operating Temperature: 150C (TJ) Mounting Type: Surface Mount Package / Case: 4-XFLGA Supplier Device Package: 4-Chip LGA (1.59x1.59)	1000 Order	1+: $0
GWM70-01P2-ND	GWM70-01P2	IXYS	View more Packaging: Tube Part Status: Obsolete FET Type: 6 N-Channel (3-Phase Bridge) FET Feature: Standard Drain to Source Voltage (Vdss): 100V Current - Continuous Drain (Id) @ 25C: 70A Rds On (Max) @ Id, Vgs: 14 mOhm @ 35A, 10V Vgs(th) (Max) @ Id: 4V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 110nC @ 10V Operating Temperature: -40C ~ 175C (TJ) Mounting Type: Surface Mount Package / Case: ISOPLUS-DIL Supplier Device Package: ISOPLUS-DIL	1000 Order	1+: $0
APTM100A18FTG-N D	APTM100A18FTG	Microsemi Corporation	View more Packaging: Bulk Part Status: Active FET Type: 2 N-Channel (Half Bridge) FET Feature: Standard Drain to Source Voltage (Vdss): 1000V (1kV) Current - Continuous Drain (Id) @ 25C: 43A Rds On (Max) @ Id, Vgs: 210 mOhm @ 21.5A, 10V Vgs(th) (Max) @ Id: 5V @ 5mA Gate Charge (Qg) (Max) @ Vgs: 372nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 10400pF @ 25V Power - Max: 780W Operating Temperature: -40C ~ 150C (TJ) Mounting Type: Chassis Mount Package / Case: SP4 Supplier Device Package: SP4	1000 Order	100+: $69.9539
TPCL4202(TE85LF )-ND	TPCL4202(TE85L, F)	Toshiba Semiconductor and Storage	View more Packaging: Tape & Reel (TR) Part Status: Obsolete FET Type: 2 N-Channel (Half Bridge) FET Feature: Standard Vgs(th) (Max) @ Id: 1.2V @ 200A Input Capacitance (Ciss) (Max) @ Vds: 780pF @ 10V Power - Max: 500mW Operating Temperature: 150C (TJ) Mounting Type: Surface Mount Package / Case: 4-XFLGA Supplier Device Package: 4-Chip LGA (1.59x1.59) Base Part Number: TPC*202	1000 Order	1+: $0
APTMC120AM55CT1 AG-ND	APTMC120AM55CT1 AG	Microsemi Corporation	View more Packaging: Bulk Part Status: Active FET Type: 2 N-Channel (Half Bridge) FET Feature: Standard Drain to Source Voltage (Vdss): 1200V (1.2kV) Current - Continuous Drain (Id) @ 25C: 55A Rds On (Max) @ Id, Vgs: 49 mOhm @ 40A, 20V Vgs(th) (Max) @ Id: 2.2V @ 2mA (Typ) Gate Charge (Qg) (Max) @ Vgs: 98nC @ 20V Input Capacitance (Ciss) (Max) @ Vds: 1900pF @ 1000V Power - Max: 250W Operating Temperature: -40C ~ 150C (TJ) Mounting Type: Chassis Mount Package / Case: SP1 Supplier Device Package: SP1	1000 Order	1+: $136.332 10+: $129.75 25+: $125.049
296-29695-2-ND	CSD87331Q3D	Texas Instruments	View more Series: NexFET Packaging: Tape & Reel (TR) Part Status: Active FET Type: 2 N-Channel (Half Bridge) FET Feature: Standard Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25C: 15A Vgs(th) (Max) @ Id: 2.1V @ 250A Gate Charge (Qg) (Max) @ Vgs: 3.2nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 518pF @ 15V Power - Max: 6W Operating Temperature: -55C ~ 150C (TJ) Mounting Type: Surface Mount Package / Case: 8-PowerLDFN Supplier Device Package: 8-LSON (5x6) Base Part Number: CSD87331	10000 Order	--
GWM180-004X2-SM DSAM-ND	GWM180-004X2-SM DSAM	IXYS	View more Packaging: Tube Part Status: Active FET Type: 6 N-Channel (3-Phase Bridge) FET Feature: Standard Drain to Source Voltage (Vdss): 40V Current - Continuous Drain (Id) @ 25C: 180A Rds On (Max) @ Id, Vgs: 2.5 mOhm @ 100A, 10V Vgs(th) (Max) @ Id: 4.5V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 110nC @ 10V Operating Temperature: -55C ~ 175C (TJ) Mounting Type: Surface Mount Package / Case: 17-SMD, Gull Wing Supplier Device Package: ISOPLUS-DIL	1000 Order	1+: $14.4774
GWM160-0055X1-S L-ND	GWM160-0055X1-S L	IXYS	View more Packaging: Tube Part Status: Obsolete FET Type: 6 N-Channel (3-Phase Bridge) FET Feature: Standard Drain to Source Voltage (Vdss): 55V Current - Continuous Drain (Id) @ 25C: 150A Rds On (Max) @ Id, Vgs: 3.3 mOhm @ 100A, 10V Vgs(th) (Max) @ Id: 4.5V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 105nC @ 10V Operating Temperature: -55C ~ 175C (TJ) Mounting Type: Surface Mount Package / Case: 17-SMD, Flat Leads Supplier Device Package: ISOPLUS-DIL Base Part Number: GWM160	1000 Order	1+: $0
296-40012-2-ND	CSD87384M	Texas Instruments	View more Series: NexFET Packaging: Tape & Reel (TR) Part Status: Active FET Type: 2 N-Channel (Half Bridge) FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25C: 30A Rds On (Max) @ Id, Vgs: 7.7 mOhm @ 25A, 8V Vgs(th) (Max) @ Id: 1.9V @ 250A Gate Charge (Qg) (Max) @ Vgs: 9.2nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 1150pF @ 15V Power - Max: 8W Operating Temperature: -55C ~ 150C (TJ) Mounting Type: Surface Mount Package / Case: 5-LGA Supplier Device Package: 5-PTAB (5x3.5)	1000 Order	--
APTM120H29FG-ND	APTM120H29FG	Microsemi Corporation	View more Series: POWER MOS 7 Packaging: Bulk Part Status: Active FET Type: 4 N-Channel (H-Bridge) FET Feature: Standard Drain to Source Voltage (Vdss): 1200V (1.2kV) Current - Continuous Drain (Id) @ 25C: 34A Rds On (Max) @ Id, Vgs: 348 mOhm @ 17A, 10V Vgs(th) (Max) @ Id: 5V @ 5mA Gate Charge (Qg) (Max) @ Vgs: 374nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 10300pF @ 25V Power - Max: 780W Operating Temperature: -40C ~ 150C (TJ) Mounting Type: Chassis Mount Package / Case: SP6 Supplier Device Package: SP6	1000 Order	100+: $141.672
917-1110-2-ND	EPC2106	EPC	View more Series: eGaN Packaging: Tape & Reel (TR) Part Status: Active FET Type: 2 N-Channel (Half Bridge) FET Feature: GaNFET (Gallium Nitride) Drain to Source Voltage (Vdss): 100V Current - Continuous Drain (Id) @ 25C: 1.7A Rds On (Max) @ Id, Vgs: 70 mOhm @ 2A, 5V Vgs(th) (Max) @ Id: 2.5V @ 600A Gate Charge (Qg) (Max) @ Vgs: 0.73nC @ 5V Input Capacitance (Ciss) (Max) @ Vds: 75pF @ 50V Operating Temperature: -40C ~ 150C (TJ) Mounting Type: Surface Mount Package / Case: Die Supplier Device Package: Die	14000 Order	--
APTM50H15FT1G-N D	APTM50H15FT1G	Microsemi Corporation	View more Packaging: Bulk Part Status: Active FET Type: 4 N-Channel (H-Bridge) FET Feature: Standard Drain to Source Voltage (Vdss): 500V Current - Continuous Drain (Id) @ 25C: 25A Rds On (Max) @ Id, Vgs: 180 mOhm @ 21A, 10V Vgs(th) (Max) @ Id: 5V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 170nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 5448pF @ 25V Power - Max: 208W Operating Temperature: -40C ~ 150C (TJ) Mounting Type: Chassis Mount Package / Case: SP1 Supplier Device Package: SP1	1000 Order	100+: $22.0444
APTM10HM05FG-ND	APTM10HM05FG	Microsemi Corporation	View more Packaging: Bulk Part Status: Active FET Type: 4 N-Channel (H-Bridge) FET Feature: Standard Drain to Source Voltage (Vdss): 100V Current - Continuous Drain (Id) @ 25C: 278A Rds On (Max) @ Id, Vgs: 5 mOhm @ 125A, 10V Vgs(th) (Max) @ Id: 4V @ 5mA Gate Charge (Qg) (Max) @ Vgs: 700nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 20000pF @ 25V Power - Max: 780W Operating Temperature: -40C ~ 150C (TJ) Mounting Type: Chassis Mount Package / Case: SP6 Supplier Device Package: SP6	1000 Order	100+: $109.302
APTM120H140FT1G -ND	APTM120H140FT1G	Microsemi Corporation	View more Packaging: Bulk Part Status: Active FET Type: 4 N-Channel (H-Bridge) FET Feature: Standard Drain to Source Voltage (Vdss): 1200V (1.2kV) Current - Continuous Drain (Id) @ 25C: 8A Rds On (Max) @ Id, Vgs: 1.68 Ohm @ 7A, 10V Vgs(th) (Max) @ Id: 5V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 145nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 3812pF @ 25V Power - Max: 208W Operating Temperature: -40C ~ 150C (TJ) Mounting Type: Chassis Mount Package / Case: SP1 Supplier Device Package: SP1	1000 Order	100+: $25.8903
917-EPC2103ENGR TR-ND	EPC2103ENGRT	EPC	View more Series: eGaN Packaging: Tape & Reel (TR) Part Status: Active FET Type: 2 N-Channel (Half Bridge) FET Feature: GaNFET (Gallium Nitride) Drain to Source Voltage (Vdss): 80V Current - Continuous Drain (Id) @ 25C: 23A Rds On (Max) @ Id, Vgs: 5.5 mOhm @ 20A, 5V Vgs(th) (Max) @ Id: 2.5V @ 7mA Gate Charge (Qg) (Max) @ Vgs: 6.5nC @ 5V Input Capacitance (Ciss) (Max) @ Vds: 7600pF @ 40V Mounting Type: Surface Mount Package / Case: Die Supplier Device Package: Die	5000 Order	500+: $3.4812
GWM120-0075P3-S L-ND	GWM120-0075P3-S L	IXYS	View more Packaging: Tube Part Status: Active FET Type: 6 N-Channel (3-Phase Bridge) FET Feature: Standard Drain to Source Voltage (Vdss): 75V Current - Continuous Drain (Id) @ 25C: 118A Rds On (Max) @ Id, Vgs: 5.5 mOhm @ 60A, 10V Vgs(th) (Max) @ Id: 4V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 100nC @ 10V Operating Temperature: -55C ~ 175C (TJ) Mounting Type: Surface Mount Package / Case: 17-SMD, Flat Leads Supplier Device Package: ISOPLUS-DIL Base Part Number: GWM120	1000 Order	36+: $17.5634
APTM120A80FT1G- ND	APTM120A80FT1G	Microsemi Corporation	View more Packaging: Bulk Part Status: Obsolete FET Type: 2 N-Channel (Half Bridge) FET Feature: Standard Drain to Source Voltage (Vdss): 1200V (1.2kV) Current - Continuous Drain (Id) @ 25C: 14A Rds On (Max) @ Id, Vgs: 960 mOhm @ 12A, 10V Vgs(th) (Max) @ Id: 5V @ 2.5mA Gate Charge (Qg) (Max) @ Vgs: 260nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 6696pF @ 25V Power - Max: 357W Operating Temperature: -40C ~ 150C (TJ) Mounting Type: Chassis Mount Package / Case: SP1 Supplier Device Package: SP1	1000 Order	1+: $0
CAS120M12BM2-ND	CAS120M12BM2	Cree/Wolfspeed	View more Series: Z-Rec Packaging: Bulk Part Status: Active FET Type: 2 N-Channel (Half Bridge) FET Feature: Standard Drain to Source Voltage (Vdss): 1200V (1.2kV) Current - Continuous Drain (Id) @ 25C: 193A Rds On (Max) @ Id, Vgs: 16 mOhm @ 120A, 20V Vgs(th) (Max) @ Id: 2.6V @ 6mA (Typ) Gate Charge (Qg) (Max) @ Vgs: 378nC @ 20V Input Capacitance (Ciss) (Max) @ Vds: 6300pF @ 1000V Power - Max: 925W Operating Temperature: -40C ~ 150C (TJ) Mounting Type: Chassis Mount Package / Case: Module Supplier Device Package: Module	1000 Order	1+: $207.9
APTM50HM75SCTG- ND	APTM50HM75SCTG	Microsemi Corporation	View more Packaging: Bulk Part Status: Active FET Type: 4 N-Channel (H-Bridge) FET Feature: Silicon Carbide (SiC) Drain to Source Voltage (Vdss): 500V Current - Continuous Drain (Id) @ 25C: 46A Rds On (Max) @ Id, Vgs: 90 mOhm @ 23A, 10V Vgs(th) (Max) @ Id: 5V @ 2.5mA Gate Charge (Qg) (Max) @ Vgs: 123nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 5590pF @ 25V Power - Max: 357W Operating Temperature: -40C ~ 150C (TJ) Mounting Type: Chassis Mount Package / Case: SP4 Supplier Device Package: SP4	1000 Order	100+: $76.9363
917-EPC2104ENG- ND	EPC2104ENG	EPC	View more Series: eGaN Packaging: Tray Part Status: Discontinued at Digi-Key FET Type: 2 N-Channel (Half Bridge) FET Feature: GaNFET (Gallium Nitride) Drain to Source Voltage (Vdss): 100V Current - Continuous Drain (Id) @ 25C: 23A Rds On (Max) @ Id, Vgs: 6.3 mOhm @ 20A, 5V Vgs(th) (Max) @ Id: 2.5V @ 5.5mA Gate Charge (Qg) (Max) @ Vgs: 7nC @ 5V Input Capacitance (Ciss) (Max) @ Vds: 800pF @ 50V Operating Temperature: -40C ~ 150C (TJ) Mounting Type: Surface Mount Package / Case: Die Supplier Device Package: Die	1000 Order	1+: $0
APTM100A13DG-ND	APTM100A13DG	Microsemi Corporation	View more Packaging: Bulk Part Status: Active FET Type: 2 N-Channel (Half Bridge) FET Feature: Standard Drain to Source Voltage (Vdss): 1000V (1kV) Current - Continuous Drain (Id) @ 25C: 65A Rds On (Max) @ Id, Vgs: 156 mOhm @ 32.5A, 10V Vgs(th) (Max) @ Id: 5V @ 6mA Gate Charge (Qg) (Max) @ Vgs: 562nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 15200pF @ 25V Power - Max: 1250W Operating Temperature: -40C ~ 150C (TJ) Mounting Type: Chassis Mount Package / Case: SP6 Supplier Device Package: SP6	1000 Order	100+: $99.5939
APTC90H12T2G-ND	APTC90H12T2G	Microsemi Corporation	View more Series: CoolMOS Packaging: Tray Part Status: Obsolete FET Type: 4 N-Channel (H-Bridge) FET Feature: Super Junction Drain to Source Voltage (Vdss): 900V Current - Continuous Drain (Id) @ 25C: 30A Rds On (Max) @ Id, Vgs: 120 mOhm @ 26A, 10V Vgs(th) (Max) @ Id: 3.5V @ 3mA Gate Charge (Qg) (Max) @ Vgs: 270nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 6800pF @ 100V Power - Max: 250W Operating Temperature: -40C ~ 150C (TJ) Mounting Type: Chassis Mount Package / Case: SP2 Supplier Device Package: SP2	1000 Order	1+: $0
917-EPC2102ENG- ND	EPC2102ENG	EPC	View more Series: eGaN Packaging: Tray Part Status: Discontinued at Digi-Key FET Type: 2 N-Channel (Half Bridge) FET Feature: GaNFET (Gallium Nitride) Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25C: 23A Rds On (Max) @ Id, Vgs: 4.4 mOhm @ 20A, 5V Vgs(th) (Max) @ Id: 2.5V @ 7mA Gate Charge (Qg) (Max) @ Vgs: 6.8nC @ 5V Input Capacitance (Ciss) (Max) @ Vds: 830pF @ 30V Operating Temperature: -40C ~ 150C (TJ) Mounting Type: Surface Mount Package / Case: Die Supplier Device Package: Die	1000 Order	1+: $0

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