Osc xo 2.5v 125mhz 8 mm - Allicdata Electronics

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Allicdata Part#	Mft.Part#	Company	Spec.	QTY.	Pricing(USD)
FC8J33040LTR-ND	FC8J33040L	Panasonic Electronic Components	View more Packaging: Tape & Reel (TR) Part Status: Active FET Type: 2 N-Channel (Dual) FET Feature: Standard Drain to Source Voltage (Vdss): 33V Current - Continuous Drain (Id) @ 25C: 5A Rds On (Max) @ Id, Vgs: 38 mOhm @ 2.5A, 10V Vgs(th) (Max) @ Id: 2.5V @ 260A Gate Charge (Qg) (Max) @ Vgs: 2.8nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 220pF @ 10V Power - Max: 1W Operating Temperature: 150C (TJ) Mounting Type: Surface Mount Package / Case: 8-SMD, Flat Lead Supplier Device Package: WMini8-F1 Base Part Number: FC8J3304	1000 Order	--
QH8MA3TCRTR-ND	QH8MA3TCR	ROHM Semiconductor	View more Packaging: Tape & Reel (TR) Part Status: Active FET Type: N and P-Channel FET Feature: Standard Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25C: 7A, 5.5A Rds On (Max) @ Id, Vgs: 29 mOhm @ 7A, 10V Vgs(th) (Max) @ Id: 2.5V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 7.2nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 300pF @ 15V Power - Max: 1.5W Operating Temperature: 150C (TJ) Mounting Type: Surface Mount Package / Case: 8-SMD, Flat Lead Supplier Device Package: TSMT8	1000 Order	3000+: $0.1807
QH8MA2TCRTR-ND	QH8MA2TCR	ROHM Semiconductor	View more Packaging: Tape & Reel (TR) Part Status: Active FET Type: N and P-Channel FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25C: 4.5A, 3A Rds On (Max) @ Id, Vgs: 35 mOhm @ 4.5A, 10V Vgs(th) (Max) @ Id: 2.5V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 8.4nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 365pF @ 10V Power - Max: 1.25W Operating Temperature: 150C (TJ) Mounting Type: Surface Mount Package / Case: 8-SMD, Flat Lead Supplier Device Package: TSMT8	1000 Order	3000+: $0.1168
FDPC8014ASTR-ND	FDPC8014AS	ON Semiconductor	View more Series: PowerTrench Packaging: Tape & Reel (TR) Part Status: Active FET Type: 2 N-Channel (Dual) Asymmetrical FET Feature: Standard Drain to Source Voltage (Vdss): 25V Current - Continuous Drain (Id) @ 25C: 20A, 40A Rds On (Max) @ Id, Vgs: 3.8 mOhm @ 20A, 10V Vgs(th) (Max) @ Id: 2.5V @ 250A Gate Charge (Qg) (Max) @ Vgs: 35nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 2375pF @ 13V Power - Max: 2.1W, 2.3W Operating Temperature: -55C ~ 150C (TJ) Mounting Type: Surface Mount Package / Case: 8-PowerWDFN Supplier Device Package: Power Clip 56	1000 Order	3000+: $0.8524
QS8J4TR-ND	QS8J4TR	ROHM Semiconductor	View more Packaging: Tape & Reel (TR) Part Status: Active FET Type: 2 P-Channel (Dual) FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25C: 4A Rds On (Max) @ Id, Vgs: 56 mOhm @ 4A, 10V Vgs(th) (Max) @ Id: 2.5V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 13nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 800pF @ 10V Power - Max: 550mW Operating Temperature: 150C (TJ) Mounting Type: Surface Mount Package / Case: 8-SMD, Flat Lead Supplier Device Package: TSMT8	1000 Order	3000+: $0.281
FC8V33030L-ND	FC8V33030L	Panasonic Electronic Components	View more Packaging: Tape & Reel (TR) Part Status: Active FET Type: 2 N-Channel (Dual) FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 33V Current - Continuous Drain (Id) @ 25C: 6.5A Rds On (Max) @ Id, Vgs: 20 mOhm @ 3.3A, 10V Vgs(th) (Max) @ Id: 2.5V @ 480A Gate Charge (Qg) (Max) @ Vgs: 3.8nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 360pF @ 10V Power - Max: 1W Operating Temperature: 150C (TJ) Mounting Type: Surface Mount Package / Case: 8-SMD, Flat Lead Supplier Device Package: WMini8-F1	1000 Order	3000+: $0.2683
QS8K13TCRTR-ND	QS8K13TCR	ROHM Semiconductor	View more Packaging: Tape & Reel (TR) Part Status: Active FET Type: 2 N-Channel (Dual) FET Feature: Standard Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25C: 6A Rds On (Max) @ Id, Vgs: 28 mOhm @ 6A, 10V Vgs(th) (Max) @ Id: 2.5V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 20nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 390pF @ 10V Power - Max: 550mW Operating Temperature: 150C (TJ) Mounting Type: Surface Mount Package / Case: 8-SMD, Flat Lead Supplier Device Package: TSMT8	1000 Order	3000+: $0.3418
QH8KA1TCRTR-ND	QH8KA1TCR	ROHM Semiconductor	View more Packaging: Tape & Reel (TR) Part Status: Active FET Type: 2 N-Channel (Dual) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25C: 4.5A Rds On (Max) @ Id, Vgs: 73 mOhm @ 4.5A, 10V Vgs(th) (Max) @ Id: 2.5V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 3nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 125pf @ 15V Power - Max: 2.4W Operating Temperature: 150C (TJ) Mounting Type: Surface Mount Package / Case: 8-SMD, Flat Lead Supplier Device Package: TSMT8	1000 Order	3000+: $0.1561
STL20DNF06LAG-N D	STL20DNF06LAG	STMicroelectronics	View more Series: Automotive, AEC-Q101 Packaging: Tape & Reel (TR) Part Status: Active FET Type: 2 N-Channel (Dual) FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25C: 20A Rds On (Max) @ Id, Vgs: 40 mOhm @ 4A, 10V Vgs(th) (Max) @ Id: 2.5V @ 250A Gate Charge (Qg) (Max) @ Vgs: 22.5nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 670pF @ 25V Power - Max: 75W Operating Temperature: -55C ~ 175C (TJ) Mounting Type: Surface Mount Package / Case: 8-PowerVDFN Supplier Device Package: PowerFlat (5x6)	1000 Order	3000+: $0.3094
QH8KA2TCRTR-ND	QH8KA2TCR	ROHM Semiconductor	View more Packaging: Tape & Reel (TR) Part Status: Active FET Type: 2 N-Channel (Dual) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25C: 4.5A Rds On (Max) @ Id, Vgs: 73 mOhm @ 4.5A, 10V Vgs(th) (Max) @ Id: 2.5V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 3nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 125pf @ 15V Power - Max: 2.4W Operating Temperature: 150C (TJ) Mounting Type: Surface Mount Package / Case: 8-SMD, Flat Lead Supplier Device Package: TSMT8	1000 Order	3000+: $0.1754
FDMS3616STR-ND	FDMS3616S	ON Semiconductor	View more Series: PowerTrench Packaging: Tape & Reel (TR) Part Status: Obsolete FET Type: 2 N-Channel (Dual) Asymmetrical FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 25V Current - Continuous Drain (Id) @ 25C: 16A, 18A Rds On (Max) @ Id, Vgs: 6.6 mOhm @ 16A, 10V Vgs(th) (Max) @ Id: 2.5V @ 250A Gate Charge (Qg) (Max) @ Vgs: 27nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 1765pF @ 13V Power - Max: 1W Mounting Type: Surface Mount Package / Case: 8-PowerTDFN Supplier Device Package: Power56	1000 Order	1+: $0
917-1185-2-ND	EPC2105	EPC	View more Series: eGaN Packaging: Tape & Reel (TR) Part Status: Active FET Type: 2 N-Channel (Half Bridge) FET Feature: GaNFET (Gallium Nitride) Drain to Source Voltage (Vdss): 80V Current - Continuous Drain (Id) @ 25C: 9.5A, 38A Rds On (Max) @ Id, Vgs: 14.5 mOhm @ 20A, 5V, 3.4 mOhm @ 20A, 5V Vgs(th) (Max) @ Id: 2.5V @ 2.5mA, 2.5V @ 10mA Gate Charge (Qg) (Max) @ Vgs: 2.5nC @ 5V, 10nC @ 5V Input Capacitance (Ciss) (Max) @ Vds: 300pF @ 40V, 1100pF @ 40V Operating Temperature: -40C ~ 150C (TJ) Mounting Type: Surface Mount Package / Case: Die Supplier Device Package: Die	10000 Order	500+: $3.5149
BSL806NH6327XTS A1-ND	BSL806NH6327XTS A1	Infineon Technologies	View more Series: OptiMOS Packaging: Tape & Reel (TR) Part Status: Active FET Type: 2 N-Channel (Dual) FET Feature: Logic Level Gate, 1.8V Drive Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25C: 2.3A (Ta) Rds On (Max) @ Id, Vgs: 57 mOhm @ 2.3A, 2.5V Vgs(th) (Max) @ Id: 750mV @ 11A Gate Charge (Qg) (Max) @ Vgs: 1.7nC @ 2.5V Input Capacitance (Ciss) (Max) @ Vds: 259pF @ 10V Power - Max: 500mW Operating Temperature: -55C ~ 150C (TJ) Mounting Type: Surface Mount Package / Case: SOT-23-6 Thin, TSOT-23-6 Supplier Device Package: PG-TSOP6-6	1000 Order	--
917-EPC2108ENGR TR-ND	EPC2108ENGRT	EPC	View more Series: eGaN Packaging: Tape & Reel (TR) Part Status: Active FET Type: 3 N-Channel (Half Bridge + Synchronous Bootstrap) FET Feature: GaNFET (Gallium Nitride) Drain to Source Voltage (Vdss): 60V, 100V Current - Continuous Drain (Id) @ 25C: 1.7A, 500mA Rds On (Max) @ Id, Vgs: 190 mOhm @ 2.5A, 5V, 3.3 Ohm @ 2.5A, 5V Vgs(th) (Max) @ Id: 2.5V @ 100A, 2.5V @ 20A Gate Charge (Qg) (Max) @ Vgs: 0.22nC @ 5V, 0.044nC @ 5V Input Capacitance (Ciss) (Max) @ Vds: 22pF @ 30V, 7pF @ 30V Operating Temperature: -40C ~ 150C (TJ) Mounting Type: Surface Mount Package / Case: 9-VFBGA Supplier Device Package: 9-BGA (1.35x1.35)	2500 Order	2500+: $0.5771
BSD840NH6327XTS A1TR-ND	BSD840NH6327XTS A1	Infineon Technologies	View more Series: OptiMOS Packaging: Tape & Reel (TR) Part Status: Active FET Type: 2 N-Channel (Dual) FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25C: 880mA Rds On (Max) @ Id, Vgs: 400 mOhm @ 880mA, 2.5V Vgs(th) (Max) @ Id: 750mV @ 1.6A Gate Charge (Qg) (Max) @ Vgs: 0.26nC @ 2.5V Input Capacitance (Ciss) (Max) @ Vds: 78pF @ 10V Power - Max: 500mW Operating Temperature: -55C ~ 150C (TJ) Mounting Type: Surface Mount Package / Case: 6-VSSOP, SC-88, SOT-363 Supplier Device Package: PG-SOT363-6 Base Part Number: BSD840	30000 Order	3000+: $0.069
917-1169-2-ND	EPC2108	EPC	View more Series: eGaN Packaging: Tape & Reel (TR) Part Status: Active FET Type: 3 N-Channel (Half Bridge + Synchronous Bootstrap) FET Feature: GaNFET (Gallium Nitride) Drain to Source Voltage (Vdss): 60V, 100V Current - Continuous Drain (Id) @ 25C: 1.7A, 500mA Rds On (Max) @ Id, Vgs: 190 mOhm @ 2.5A, 5V, 3.3 Ohm @ 2.5A, 5V Vgs(th) (Max) @ Id: 2.5V @ 100A, 2.5V @ 20A Gate Charge (Qg) (Max) @ Vgs: 0.22nC @ 5V, 0.044nC @ 5V Input Capacitance (Ciss) (Max) @ Vds: 22pF @ 30V, 7pF @ 30V Operating Temperature: -40C ~ 150C (TJ) Mounting Type: Surface Mount Package / Case: 9-VFBGA Supplier Device Package: 9-BGA (1.35x1.35)	17500 Order	2500+: $0.5771
BSD840NL6327-ND	BSD840N L6327	Infineon Technologies	View more Series: OptiMOS Packaging: Tape & Reel (TR) Part Status: Obsolete FET Type: 2 N-Channel (Dual) FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25C: 880mA Rds On (Max) @ Id, Vgs: 400 mOhm @ 880mA, 2.5V Vgs(th) (Max) @ Id: 750mV @ 1.6A Gate Charge (Qg) (Max) @ Vgs: 0.26nC @ 2.5V Input Capacitance (Ciss) (Max) @ Vds: 78pF @ 10V Power - Max: 500mW Operating Temperature: -55C ~ 150C (TJ) Mounting Type: Surface Mount Package / Case: 6-VSSOP, SC-88, SOT-363 Supplier Device Package: PG-SOT363-6 Base Part Number: BSD840	1000 Order	1+: $0
917-1180-2-ND	EPC2100	EPC	View more Series: eGaN Packaging: Tape & Reel (TR) Part Status: Active FET Type: 2 N-Channel (Half Bridge) FET Feature: GaNFET (Gallium Nitride) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25C: 10A (Ta), 40A (Ta) Rds On (Max) @ Id, Vgs: 8.2 mOhm @ 25A, 5V, 2.1 mOhm @ 25A, 5V Vgs(th) (Max) @ Id: 2.5V @ 4mA, 2.5V @ 16mA Gate Charge (Qg) (Max) @ Vgs: 4.9nC @ 15V, 19nC @ 15V Input Capacitance (Ciss) (Max) @ Vds: 475pF @ 15V, 1960pF @ 15V Operating Temperature: -40C ~ 150C (TJ) Mounting Type: Surface Mount Package / Case: Die Supplier Device Package: Die	7500 Order	500+: $3.4138
917-EPC2100ENGR TR-ND	EPC2100ENGRT	EPC	View more Series: eGaN Packaging: Tape & Reel (TR) Part Status: Active FET Type: 2 N-Channel (Half Bridge) FET Feature: GaNFET (Gallium Nitride) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25C: 10A (Ta), 40A (Ta) Rds On (Max) @ Id, Vgs: 8.2 mOhm @ 25A, 5V, 2.1 mOhm @ 25A, 5V Vgs(th) (Max) @ Id: 2.5V @ 4mA, 2.5V @ 16mA Gate Charge (Qg) (Max) @ Vgs: 4.9nC @ 15V, 19nC @ 15V Input Capacitance (Ciss) (Max) @ Vds: 475pF @ 15V, 1960pF @ 15V Operating Temperature: -40C ~ 150C (TJ) Mounting Type: Surface Mount Package / Case: Die Supplier Device Package: Die	6500 Order	500+: $3.4138
917-EPC2107ENGR TR-ND	EPC2107ENGRT	EPC	View more Series: eGaN Packaging: Tape & Reel (TR) Part Status: Active FET Type: 3 N-Channel (Half Bridge + Synchronous Bootstrap) FET Feature: GaNFET (Gallium Nitride) Drain to Source Voltage (Vdss): 100V Current - Continuous Drain (Id) @ 25C: 1.7A, 500mA Rds On (Max) @ Id, Vgs: 320 mOhm @ 2A, 5V, 3.3 Ohm @ 2A, 5V Vgs(th) (Max) @ Id: 2.5V @ 100A, 2.5V @ 20A Gate Charge (Qg) (Max) @ Vgs: 0.16nC @ 5V, 0.044nC @ 5V Input Capacitance (Ciss) (Max) @ Vds: 16pF @ 50V, 7pF @ 50V Operating Temperature: -40C ~ 150C (TJ) Mounting Type: Surface Mount Package / Case: 9-VFBGA Supplier Device Package: 9-BGA (1.35x1.35)	1000 Order	5000+: $0.5839
BSL806NL6327HTS A1TR-ND	BSL806NL6327HTS A1	Infineon Technologies	View more Series: OptiMOS Packaging: Tape & Reel (TR) Part Status: Obsolete FET Type: 2 N-Channel (Dual) FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25C: 2.3A Rds On (Max) @ Id, Vgs: 57 mOhm @ 2.3A, 2.5V Vgs(th) (Max) @ Id: 750mV @ 11A Gate Charge (Qg) (Max) @ Vgs: 1.7nC @ 2.5V Input Capacitance (Ciss) (Max) @ Vds: 259pF @ 10V Power - Max: 500mW Operating Temperature: -55C ~ 150C (TJ) Mounting Type: Surface Mount Package / Case: SOT-23-6 Thin, TSOT-23-6 Supplier Device Package: PG-TSOP6-6 Base Part Number: BSL806	1000 Order	1+: $0
917-1168-2-ND	EPC2107	EPC	View more Series: eGaN Packaging: Tape & Reel (TR) Part Status: Active FET Type: 3 N-Channel (Half Bridge + Synchronous Bootstrap) FET Feature: GaNFET (Gallium Nitride) Drain to Source Voltage (Vdss): 100V Current - Continuous Drain (Id) @ 25C: 1.7A, 500mA Rds On (Max) @ Id, Vgs: 320 mOhm @ 2A, 5V, 3.3 Ohm @ 2A, 5V Vgs(th) (Max) @ Id: 2.5V @ 100A, 2.5V @ 20A Gate Charge (Qg) (Max) @ Vgs: 0.16nC @ 5V, 0.044nC @ 5V Input Capacitance (Ciss) (Max) @ Vds: 16pF @ 50V, 7pF @ 50V Operating Temperature: -40C ~ 150C (TJ) Mounting Type: Surface Mount Package / Case: 9-VFBGA Supplier Device Package: 9-BGA (1.35x1.35)	17500 Order	2500+: $0.6064
917-EPC2100ENG- ND	EPC2100ENG	EPC	View more Series: eGaN Packaging: Tray Part Status: Discontinued at Digi-Key FET Type: 2 N-Channel (Half Bridge) FET Feature: GaNFET (Gallium Nitride) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25C: 10A (Ta), 40A (Ta) Rds On (Max) @ Id, Vgs: 8.2 mOhm @ 25A, 5V, 2.1 mOhm @ 25A, 5V Vgs(th) (Max) @ Id: 2.5V @ 4mA, 2.5V @ 16mA Gate Charge (Qg) (Max) @ Vgs: 4.9nC @ 15V, 19nC @ 15V Input Capacitance (Ciss) (Max) @ Vds: 475pF @ 15V, 1960pF @ 15V Operating Temperature: -40C ~ 150C (TJ) Mounting Type: Surface Mount Package / Case: Die Supplier Device Package: Die	1000 Order	1+: $0
917-1181-2-ND	EPC2101	EPC	View more Series: eGaN Packaging: Tape & Reel (TR) Part Status: Active FET Type: 2 N-Channel (Half Bridge) FET Feature: GaNFET (Gallium Nitride) Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25C: 9.5A, 38A Rds On (Max) @ Id, Vgs: 11.5 mOhm @ 20A, 5V, 2.7 mOhm @ 20A, 5V Vgs(th) (Max) @ Id: 2.5V @ 3mA, 2.5V @ 12mA Gate Charge (Qg) (Max) @ Vgs: 2.7nC @ 5V, 12nC @ 5V Input Capacitance (Ciss) (Max) @ Vds: 300pF @ 30V, 1200pF @ 30V Operating Temperature: -40C ~ 150C (TJ) Mounting Type: Surface Mount Package / Case: Die Supplier Device Package: Die	10000 Order	500+: $3.4588
NTHD2102PT1GOST R-ND	NTHD2102PT1G	ON Semiconductor	View more Packaging: Tape & Reel (TR) Part Status: Obsolete FET Type: 2 P-Channel (Dual) FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 8V Current - Continuous Drain (Id) @ 25C: 3.4A Rds On (Max) @ Id, Vgs: 58 mOhm @ 3.4A, 4.5V Vgs(th) (Max) @ Id: 1.5V @ 250A Gate Charge (Qg) (Max) @ Vgs: 16nC @ 2.5V Input Capacitance (Ciss) (Max) @ Vds: 715pF @ 6.4V Power - Max: 1.1W Operating Temperature: -55C ~ 150C (TJ) Mounting Type: Surface Mount Package / Case: 8-SMD, Flat Lead Supplier Device Package: ChipFET Base Part Number: NTHD2102P	1000 Order	1+: $0
FDPC8016STR-ND	FDPC8016S	ON Semiconductor	View more Series: PowerTrench Packaging: Tape & Reel (TR) Part Status: Active FET Type: 2 N-Channel (Dual) Asymmetrical FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 25V Current - Continuous Drain (Id) @ 25C: 20A, 35A Rds On (Max) @ Id, Vgs: 3.8 mOhm @ 20A, 10V Vgs(th) (Max) @ Id: 2.5V @ 250A Gate Charge (Qg) (Max) @ Vgs: 35nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 2375pF @ 13V Power - Max: 2.1W, 2.3W Operating Temperature: -55C ~ 150C (TJ) Mounting Type: Surface Mount Package / Case: 8-PowerWDFN Supplier Device Package: Power Clip 56	136 Order	--
QS8M51TR-ND	QS8M51TR	ROHM Semiconductor	View more Packaging: Tape & Reel (TR) Part Status: Active FET Type: N and P-Channel FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 100V Current - Continuous Drain (Id) @ 25C: 2A, 1.5A Rds On (Max) @ Id, Vgs: 325 mOhm @ 2A, 10V Vgs(th) (Max) @ Id: 2.5V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 4.7nC @ 5V Input Capacitance (Ciss) (Max) @ Vds: 290pF @ 25V Power - Max: 1.5W Operating Temperature: 150C (TJ) Mounting Type: Surface Mount Package / Case: 8-SMD, Flat Lead Supplier Device Package: TSMT8 Base Part Number: *M51	1000 Order	3000+: $0.3651
QS8M13TCRTR-ND	QS8M13TCR	ROHM Semiconductor	View more Packaging: Tape & Reel (TR) Part Status: Not For New Designs FET Type: N and P-Channel FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25C: 6A, 5A Rds On (Max) @ Id, Vgs: 28 mOhm @ 6A, 10V Vgs(th) (Max) @ Id: 2.5V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 5.5nC @ 5V Input Capacitance (Ciss) (Max) @ Vds: 390pF @ 10V Power - Max: 1.5W Operating Temperature: 150C (TJ) Mounting Type: Surface Mount Package / Case: 8-SMD, Flat Lead Supplier Device Package: TSMT8 Base Part Number: *M13	15000 Order	3000+: $0.3043
FDPC8014STR-ND	FDPC8014S	ON Semiconductor	View more Series: PowerTrench Packaging: Tape & Reel (TR) Part Status: Active FET Type: 2 N-Channel (Dual) Asymmetrical FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 25V Current - Continuous Drain (Id) @ 25C: 20A, 41A Rds On (Max) @ Id, Vgs: 3.8 mOhm @ 20A, 10V Vgs(th) (Max) @ Id: 2.5V @ 250A Gate Charge (Qg) (Max) @ Vgs: 35nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 2375pF @ 13V Power - Max: 2.1W, 2.3W Operating Temperature: -55C ~ 150C (TJ) Mounting Type: Surface Mount Package / Case: 8-PowerWDFN Supplier Device Package: Power Clip 56	1000 Order	--
EMH2418R-TL-HOS TR-ND	EMH2418R-TL-H	ON Semiconductor	View more Packaging: Tape & Reel (TR) Part Status: Active FET Type: 2 N-Channel (Dual) Common Drain FET Feature: Logic Level Gate, 2.5V Drive Drain to Source Voltage (Vdss): 24V Current - Continuous Drain (Id) @ 25C: 9A Rds On (Max) @ Id, Vgs: 15 mOhm @ 4A, 4.5V Vgs(th) (Max) @ Id: 1.3V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 4.4nC @ 4.5V Power - Max: 1.3W Operating Temperature: 150C (TJ) Mounting Type: Surface Mount Package / Case: 8-SMD, Flat Lead Supplier Device Package: SOT-383FL, EMH8	3000 Order	--
NTHD2102PT1OS-N D	NTHD2102PT1	ON Semiconductor	View more Packaging: Tape & Reel (TR) Part Status: Obsolete FET Type: 2 P-Channel (Dual) FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 8V Current - Continuous Drain (Id) @ 25C: 3.4A Rds On (Max) @ Id, Vgs: 58 mOhm @ 3.4A, 4.5V Vgs(th) (Max) @ Id: 1.5V @ 250A Gate Charge (Qg) (Max) @ Vgs: 16nC @ 2.5V Input Capacitance (Ciss) (Max) @ Vds: 715pF @ 6.4V Power - Max: 1.1W Operating Temperature: -55C ~ 150C (TJ) Mounting Type: Surface Mount Package / Case: 8-SMD, Flat Lead Supplier Device Package: ChipFET Base Part Number: NTHD2102P	1000 Order	--
917-1174-2-ND	EPC2111	EPC	View more Packaging: Tape & Reel (TR) Part Status: Active FET Type: 2 N-Channel (Half Bridge) FET Feature: GaNFET (Gallium Nitride) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25C: 16A (Ta) Rds On (Max) @ Id, Vgs: 19 mOhm @ 15A, 5V, 8 mOhm @ 15A, 5V Vgs(th) (Max) @ Id: 2.5V @ 5mA Gate Charge (Qg) (Max) @ Vgs: 2.2nC @ 5V, 5.7nC @ 5V Input Capacitance (Ciss) (Max) @ Vds: 230pF @ 15V, 590pF @ 15V Operating Temperature: -40C ~ 150C (TJ) Mounting Type: Surface Mount Package / Case: Die Supplier Device Package: Die	22500 Order	--
EMH2417R-TL-H-N D	EMH2417R-TL-H	ON Semiconductor	View more Packaging: Tape & Reel (TR) Part Status: Last Time Buy FET Type: 2 N-Channel (Dual) Common Drain FET Feature: Logic Level Gate, 2.5V Drive Drain to Source Voltage (Vdss): 12V Current - Continuous Drain (Id) @ 25C: 11A Rds On (Max) @ Id, Vgs: 10 mOhm @ 5A, 4.5V Vgs(th) (Max) @ Id: 1.3V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 16nC @ 4.5V Power - Max: 1.3W Operating Temperature: 150C (TJ) Mounting Type: Surface Mount Package / Case: 8-SMD, Flat Lead Supplier Device Package: SOT-383FL, EMH8	1000 Order	--
917-EPC2111ENGR TR-ND	EPC2111ENGRT	EPC	View more Packaging: Tape & Reel (TR) Part Status: Active FET Type: 2 N-Channel (Half Bridge) FET Feature: GaNFET (Gallium Nitride) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25C: 16A (Ta) Rds On (Max) @ Id, Vgs: 19 mOhm @ 15A, 5V, 8 mOhm @ 15A, 5V Vgs(th) (Max) @ Id: 2.5V @ 5mA Gate Charge (Qg) (Max) @ Vgs: 2.2nC @ 5V, 5.7nC @ 5V Input Capacitance (Ciss) (Max) @ Vds: 230pF @ 15V, 590pF @ 15V Operating Temperature: -40C ~ 150C (TJ) Mounting Type: Surface Mount Package / Case: Die Supplier Device Package: Die	6000 Order	1000+: $1.1157
ECH8695R-TL-WOS TR-ND	ECH8695R-TL-W	ON Semiconductor	View more Packaging: Tape & Reel (TR) Part Status: Active FET Type: 2 N-Channel (Dual) Common Drain FET Feature: Logic Level Gate, 2.5V Drive Drain to Source Voltage (Vdss): 24V Current - Continuous Drain (Id) @ 25C: 11A Rds On (Max) @ Id, Vgs: 9.1 mOhm @ 5A, 4.5V Vgs(th) (Max) @ Id: 1.3V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 10nC @ 4.5V Power - Max: 1.4W Operating Temperature: 150C (TJ) Mounting Type: Surface Mount Package / Case: 8-SMD, Flat Lead Supplier Device Package: SOT-28FL/ECH8	1000 Order	--
QS8M12TCRTR-ND	QS8M12TCR	ROHM Semiconductor	View more Packaging: Tape & Reel (TR) Part Status: Not For New Designs FET Type: N and P-Channel FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25C: 4A Rds On (Max) @ Id, Vgs: 42 mOhm @ 4A, 10V Vgs(th) (Max) @ Id: 2.5V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 3.4nC @ 5V Input Capacitance (Ciss) (Max) @ Vds: 250pF @ 10V Power - Max: 1.5W Operating Temperature: 150C (TJ) Mounting Type: Surface Mount Package / Case: 8-SMD, Flat Lead Supplier Device Package: TSMT8 Base Part Number: *M12	1000 Order	3000+: $0.2259
1034-2N7002VA-F DITR-ND	2N7002VA-7-F	Diodes Incorporated	View more Packaging: Tape & Reel (TR) Part Status: Obsolete FET Type: 2 N-Channel (Dual) FET Feature: Standard Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25C: 280mA Rds On (Max) @ Id, Vgs: 7.5 Ohm @ 50mA, 5V Vgs(th) (Max) @ Id: 2.5V @ 250A Input Capacitance (Ciss) (Max) @ Vds: 50pF @ 25V Power - Max: 150mW Operating Temperature: -55C ~ 150C (TJ) Mounting Type: Surface Mount Package / Case: SOT-563, SOT-666 Supplier Device Package: SOT-563	15000 Order	3000+: $0.0897
DMN63D1LDW-7-ND	DMN63D1LDW-7	Diodes Incorporated	View more Packaging: Tape & Reel (TR) Part Status: Active FET Type: 2 N-Channel (Dual) FET Feature: Standard Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25C: 250mA Rds On (Max) @ Id, Vgs: 2 Ohm @ 500mA, 10V Vgs(th) (Max) @ Id: 2.5V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 0.3nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 30pF @ 25V Power - Max: 310mW Operating Temperature: -55C ~ 150C (TJ) Mounting Type: Surface Mount Package / Case: TO-236-3, SC-59, SOT-23-3 Supplier Device Package: SOT-23	1000 Order	--
EM6K31GT2RTR-ND	EM6K31GT2R	ROHM Semiconductor	View more Packaging: Tape & Reel (TR) Part Status: Active FET Type: 2 N-Channel (Dual) FET Feature: Logic Level Gate, 2.5V Drive Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25C: 250mA Rds On (Max) @ Id, Vgs: 2.4 Ohm @ 250mA, 10V Vgs(th) (Max) @ Id: 2.3V @ 1mA Input Capacitance (Ciss) (Max) @ Vds: 15pF @ 25V Power - Max: 120mW Operating Temperature: 150C (TJ) Mounting Type: Surface Mount Package / Case: SOT-563, SOT-666 Supplier Device Package: EMT6	1000 Order	8000+: $0.0561
MP6M12TCRTR-ND	MP6M12TCR	ROHM Semiconductor	View more Packaging: Tape & Reel (TR) Part Status: Obsolete FET Type: N and P-Channel FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25C: 5A Rds On (Max) @ Id, Vgs: 42 mOhm @ 5A, 10V Vgs(th) (Max) @ Id: 2.5V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 4nC @ 5V Input Capacitance (Ciss) (Max) @ Vds: 250pF @ 10V Power - Max: 2W Operating Temperature: 150C (TJ) Mounting Type: Surface Mount Package / Case: 6-SMD, Flat Leads Supplier Device Package: MPT6 Base Part Number: *M12	1000 Order	1+: $0

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