Supercap 10f 30% 2.7v 5mm lead s - Allicdata Electronics

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Allicdata Part#	Mft.Part#	Company	Spec.	QTY.	Pricing(USD)
SUM40N10-30-E3T R-ND	SUM40N10-30-E3	Vishay Siliconix	View more Series: TrenchFET Packaging: Tape & Reel (TR) Part Status: Obsolete FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 100V Current - Continuous Drain (Id) @ 25C: 40A (Tc) Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Rds On (Max) @ Id, Vgs: 30 mOhm @ 15A, 10V Vgs(th) (Max) @ Id: 4V @ 250A Gate Charge (Qg) (Max) @ Vgs: 60nC @ 10V Vgs (Max): 20V Input Capacitance (Ciss) (Max) @ Vds: 2400pF @ 25V Power Dissipation (Max): 3.75W (Ta), 107W (Tc) Operating Temperature: -55C ~ 175C (TJ) Mounting Type: Surface Mount Supplier Device Package: TO-263 (D2Pak) Package / Case: TO-263-3, DPak (2 Leads + Tab), TO-263AB	1000 Order	1+: $0
SUM65N20-30-E3T R-ND	SUM65N20-30-E3	Vishay Siliconix	View more Series: TrenchFET Packaging: Tape & Reel (TR) Part Status: Active FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 200V Current - Continuous Drain (Id) @ 25C: 65A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 30 mOhm @ 30A, 10V Vgs(th) (Max) @ Id: 4V @ 250A Gate Charge (Qg) (Max) @ Vgs: 130nC @ 10V Vgs (Max): 20V Input Capacitance (Ciss) (Max) @ Vds: 5100pF @ 25V Power Dissipation (Max): 3.75W (Ta), 375W (Tc) Operating Temperature: -55C ~ 175C (TJ) Mounting Type: Surface Mount Supplier Device Package: TO-263 (D2Pak) Package / Case: TO-263-3, DPak (2 Leads + Tab), TO-263AB	1600 Order	--
SUP40N10-30-E3- ND	SUP40N10-30-E3	Vishay Siliconix	View more Series: TrenchFET Packaging: Tube Part Status: Obsolete FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 100V Current - Continuous Drain (Id) @ 25C: 40A (Tc) Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Rds On (Max) @ Id, Vgs: 30 mOhm @ 15A, 10V Vgs(th) (Max) @ Id: 4V @ 250A Gate Charge (Qg) (Max) @ Vgs: 60nC @ 10V Vgs (Max): 20V Input Capacitance (Ciss) (Max) @ Vds: 2400pF @ 25V Power Dissipation (Max): 3.75W (Ta), 107W (Tc) Operating Temperature: -55C ~ 175C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220AB Package / Case: TO-220-3	1000 Order	--
SUP40N10-30-GE3 -ND	SUP40N10-30-GE3	Vishay Siliconix	View more Series: TrenchFET Packaging: Tape & Reel (TR) Part Status: Obsolete FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 100V Current - Continuous Drain (Id) @ 25C: 38.5A (Tc) Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Rds On (Max) @ Id, Vgs: 30 mOhm @ 15A, 10V Vgs(th) (Max) @ Id: 4V @ 250A Gate Charge (Qg) (Max) @ Vgs: 60nC @ 10V Vgs (Max): 20V Input Capacitance (Ciss) (Max) @ Vds: 2400pF @ 25V Power Dissipation (Max): 3.1W (Ta), 89W (Tc) Operating Temperature: -55C ~ 150C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220AB Package / Case: TO-220-3	1000 Order	1+: $0
STU75N3LLH6-S-N D	STU75N3LLH6-S	STMicroelectronics	View more Series: DeepGATE, STripFET VI Packaging: Tube Part Status: Obsolete FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25C: 75A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Rds On (Max) @ Id, Vgs: 5.9 mOhm @ 37.5A, 10V Vgs(th) (Max) @ Id: 2.5V @ 250A Gate Charge (Qg) (Max) @ Vgs: 17nC @ 4.5V Vgs (Max): 20V Input Capacitance (Ciss) (Max) @ Vds: 1690pF @ 25V Power Dissipation (Max): 60W (Tc) Operating Temperature: -55C ~ 175C (TJ) Mounting Type: Through Hole Supplier Device Package: I-PAK Package / Case: TO-251-3 Short Leads, IPak, TO-251AA	1000 Order	1+: $0
TJ15P04M3RQ(S-N D	TJ15P04M3,RQ(S	Toshiba Semiconductor and Storage	View more Series: U-MOSVI Packaging: Tape & Reel (TR) Part Status: Active FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 40V Current - Continuous Drain (Id) @ 25C: 15A (Ta) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Rds On (Max) @ Id, Vgs: 36 mOhm @ 7.5A, 10V Vgs(th) (Max) @ Id: 2V @ 100A Gate Charge (Qg) (Max) @ Vgs: 26nC @ 10V Vgs (Max): 20V Input Capacitance (Ciss) (Max) @ Vds: 1100pF @ 10V Power Dissipation (Max): 29W (Tc) Operating Temperature: 150C (TJ) Mounting Type: Surface Mount Supplier Device Package: DPAK Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63	1000 Order	2000+: $0.2406
TK45P03M1RQ(S-N D	TK45P03M1,RQ(S	Toshiba Semiconductor and Storage	View more Series: U-MOSVI-H Packaging: Tape & Reel (TR) Part Status: Active FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25C: 45A (Ta) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Rds On (Max) @ Id, Vgs: 9.7 mOhm @ 22.5A, 10V Vgs(th) (Max) @ Id: 2.3V @ 200A Gate Charge (Qg) (Max) @ Vgs: 25nC @ 10V Vgs (Max): 20V Input Capacitance (Ciss) (Max) @ Vds: 1500pF @ 10V Mounting Type: Surface Mount Supplier Device Package: DPAK Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63	1000 Order	1+: $0
TK60P03M1RQ(S-N D	TK60P03M1,RQ(S	Toshiba Semiconductor and Storage	View more Series: U-MOSVI-H Packaging: Tape & Reel (TR) Part Status: Active FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25C: 60A (Ta) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Rds On (Max) @ Id, Vgs: 6.4 mOhm @ 30A, 10V Vgs(th) (Max) @ Id: 2.3V @ 500A Gate Charge (Qg) (Max) @ Vgs: 40nC @ 10V Vgs (Max): 20V Input Capacitance (Ciss) (Max) @ Vds: 2700pF @ 10V Power Dissipation (Max): 63W (Tc) Operating Temperature: 150C (TJ) Mounting Type: Surface Mount Supplier Device Package: DPAK Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63	1000 Order	2000+: $0.347
TK20P04M1RQ(S-N D	TK20P04M1,RQ(S	Toshiba Semiconductor and Storage	View more Series: U-MOSVI-H Packaging: Tape & Reel (TR) Part Status: Active FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 40V Current - Continuous Drain (Id) @ 25C: 20A (Ta) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Rds On (Max) @ Id, Vgs: 29 mOhm @ 10A, 10V Vgs(th) (Max) @ Id: 2.3V @ 100A Gate Charge (Qg) (Max) @ Vgs: 15nC @ 10V Vgs (Max): 20V Input Capacitance (Ciss) (Max) @ Vds: 985pF @ 10V Power Dissipation (Max): 27W (Tc) Operating Temperature: 150C (TJ) Mounting Type: Surface Mount Supplier Device Package: DPAK Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63	1000 Order	2000+: $0.2542
TK3P50DRQ(S-ND	TK3P50D,RQ(S	Toshiba Semiconductor and Storage	View more Packaging: Tape & Reel (TR) Part Status: Active FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 500V Current - Continuous Drain (Id) @ 25C: 3A (Ta) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 3 Ohm @ 1.5A, 10V Vgs(th) (Max) @ Id: 4.4V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 7nC @ 10V Vgs (Max): 30V Input Capacitance (Ciss) (Max) @ Vds: 280pF @ 25V Power Dissipation (Max): 60W (Tc) Operating Temperature: 150C (TJ) Mounting Type: Surface Mount Supplier Device Package: DPAK Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63	1000 Order	2000+: $0.3428
TK50E08K3S1X(S- ND	TK50E08K3,S1X(S	Toshiba Semiconductor and Storage	View more Packaging: Tube Part Status: Active FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 75V Current - Continuous Drain (Id) @ 25C: 50A (Tc) Rds On (Max) @ Id, Vgs: 12 mOhm @ 25A, 10V Gate Charge (Qg) (Max) @ Vgs: 55nC @ 10V Mounting Type: Through Hole Supplier Device Package: TO-220-3 Package / Case: TO-220-3	1000 Order	1+: $0
TPC8092LQ(S-ND	TPC8092,LQ(S	Toshiba Semiconductor and Storage	View more Series: U-MOSVII Packaging: Tape & Reel (TR) Part Status: Active FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25C: 15A (Ta) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Rds On (Max) @ Id, Vgs: 9 mOhm @ 7.5A, 10V Vgs(th) (Max) @ Id: 2.3V @ 200A Gate Charge (Qg) (Max) @ Vgs: 25nC @ 10V Vgs (Max): 20V Input Capacitance (Ciss) (Max) @ Vds: 1800pF @ 10V Power Dissipation (Max): 1W (Ta) Operating Temperature: 150C (TJ) Mounting Type: Surface Mount Supplier Device Package: 8-SOP Package / Case: 8-SOIC (0.154", 3.90mm Width)	996 Order	2500+: $0.2357
TPCA8065-HLQ(S- ND	TPCA8065-H,LQ(S	Toshiba Semiconductor and Storage	View more Series: U-MOSVII-H Packaging: Tape & Reel (TR) Part Status: Active FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25C: 16A (Ta) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Rds On (Max) @ Id, Vgs: 11.4 mOhm @ 8A, 10V Vgs(th) (Max) @ Id: 2.3V @ 200A Gate Charge (Qg) (Max) @ Vgs: 20nC @ 10V Vgs (Max): 20V Input Capacitance (Ciss) (Max) @ Vds: 1600pF @ 10V Power Dissipation (Max): 1.6W (Ta), 25W (Tc) Operating Temperature: 150C (TJ) Mounting Type: Surface Mount Supplier Device Package: 8-SOP Advance (5x5) Package / Case: 8-PowerVDFN	1000 Order	3000+: $0.5702
TPCC8066-HLQ(S- ND	TPCC8066-H,LQ(S	Toshiba Semiconductor and Storage	View more Series: U-MOSVII-H Packaging: Tape & Reel (TR) Part Status: Active FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25C: 11A (Ta) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Rds On (Max) @ Id, Vgs: 15 mOhm @ 5.5A, 10V Vgs(th) (Max) @ Id: 2.3V @ 100A Gate Charge (Qg) (Max) @ Vgs: 15nC @ 10V Vgs (Max): 20V Input Capacitance (Ciss) (Max) @ Vds: 1100pF @ 10V Power Dissipation (Max): 700mW (Ta), 17W (Tc) Operating Temperature: 150C (TJ) Mounting Type: Surface Mount Supplier Device Package: 8-TSON Advance (3.3x3.3) Package / Case: 8-PowerVDFN	1000 Order	1+: $0
TK25E06K3S1X(S- ND	TK25E06K3,S1X(S	Toshiba Semiconductor and Storage	View more Series: U-MOSIV Packaging: Tube Part Status: Active FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25C: 25A (Ta) Rds On (Max) @ Id, Vgs: 18 mOhm @ 12.5A, 10V Gate Charge (Qg) (Max) @ Vgs: 29nC @ 10V Power Dissipation (Max): 60W (Tc) Operating Temperature: 150C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220-3 Package / Case: TO-220-3	1000 Order	50+: $0.6735
TPC8129LQ(S-ND	TPC8129,LQ(S	Toshiba Semiconductor and Storage	View more Series: U-MOSVI Packaging: Tape & Reel (TR) Part Status: Active FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25C: 9A (Ta) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Rds On (Max) @ Id, Vgs: 22 mOhm @ 4.5A, 10V Vgs(th) (Max) @ Id: 2V @ 200A Gate Charge (Qg) (Max) @ Vgs: 39nC @ 10V Vgs (Max): +20V, -25V Input Capacitance (Ciss) (Max) @ Vds: 1650pF @ 10V Power Dissipation (Max): 1W (Ta) Operating Temperature: 150C (TJ) Mounting Type: Surface Mount Supplier Device Package: 8-SOP Package / Case: 8-SOIC (0.154", 3.90mm Width)	1000 Order	2500+: $0.223
TK40E10K3S1X(S- ND	TK40E10K3,S1X(S	Toshiba Semiconductor and Storage	View more Series: U-MOSIV Packaging: Tube Part Status: Active FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 100V Current - Continuous Drain (Id) @ 25C: 40A (Ta) Rds On (Max) @ Id, Vgs: 15 mOhm @ 20A, 10V Vgs(th) (Max) @ Id: 4V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 84nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 4000pF @ 10V Mounting Type: Through Hole Supplier Device Package: TO-220-3 Package / Case: TO-220-3	1000 Order	50+: $1.1157
TPCC8067-HLQ(S- ND	TPCC8067-H,LQ(S	Toshiba Semiconductor and Storage	View more Series: U-MOSVII-H Packaging: Tape & Reel (TR) Part Status: Active FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25C: 9A (Ta) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Rds On (Max) @ Id, Vgs: 25 mOhm @ 4.5A, 10V Vgs(th) (Max) @ Id: 2.3V @ 100A Gate Charge (Qg) (Max) @ Vgs: 9.5nC @ 10V Vgs (Max): 20V Input Capacitance (Ciss) (Max) @ Vds: 690pF @ 10V Power Dissipation (Max): 700mW (Ta), 15W (Tc) Operating Temperature: 150C (TJ) Mounting Type: Surface Mount Supplier Device Package: 8-TSON Advance (3.3x3.3) Package / Case: 8-PowerVDFN	1000 Order	1+: $0
TK50E06K3AS1X(S -ND	TK50E06K3A,S1X( S	Toshiba Semiconductor and Storage	View more Series: U-MOSIV Packaging: Tube Part Status: Active FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25C: 50A (Tc) Rds On (Max) @ Id, Vgs: 8.5 mOhm @ 25A, 10V Gate Charge (Qg) (Max) @ Vgs: 54nC @ 10V Mounting Type: Through Hole Supplier Device Package: TO-220-3 Package / Case: TO-220-3	1000 Order	1+: $0
TPC8066-HLQ(S-N D	TPC8066-H,LQ(S	Toshiba Semiconductor and Storage	View more Series: U-MOSVII-H Packaging: Tape & Reel (TR) Part Status: Active FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25C: 11A (Ta) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Rds On (Max) @ Id, Vgs: 16 mOhm @ 5.5A, 10V Vgs(th) (Max) @ Id: 2.3V @ 100A Gate Charge (Qg) (Max) @ Vgs: 15nC @ 10V Vgs (Max): 20V Input Capacitance (Ciss) (Max) @ Vds: 1100pF @ 10V Power Dissipation (Max): 1W (Ta) Operating Temperature: 150C (TJ) Mounting Type: Surface Mount Supplier Device Package: 8-SOP Package / Case: 8-SOIC (0.154", 3.90mm Width)	1000 Order	2500+: $0.2689
TPC8065-HLQ(S-N D	TPC8065-H,LQ(S	Toshiba Semiconductor and Storage	View more Series: U-MOSVII-H Packaging: Tape & Reel (TR) Part Status: Active FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25C: 13A (Ta) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Rds On (Max) @ Id, Vgs: 11.6 mOhm @ 6.5A, 10V Vgs(th) (Max) @ Id: 2.3V @ 200A Gate Charge (Qg) (Max) @ Vgs: 20nC @ 10V Vgs (Max): 20V Input Capacitance (Ciss) (Max) @ Vds: 1350pF @ 10V Power Dissipation (Max): 1W (Ta) Operating Temperature: 150C (TJ) Mounting Type: Surface Mount Supplier Device Package: 8-SOP Package / Case: 8-SOIC (0.154", 3.90mm Width)	1000 Order	2500+: $0.3102
TK13E25DS1X(S-N D	TK13E25D,S1X(S	Toshiba Semiconductor and Storage	View more Packaging: Tube Part Status: Active FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 250V Current - Continuous Drain (Id) @ 25C: 13A (Ta) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 250 mOhm @ 6.5A, 10V Vgs(th) (Max) @ Id: 3.5V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 25nC @ 10V Vgs (Max): 20V Input Capacitance (Ciss) (Max) @ Vds: 1100pF @ 100V Power Dissipation (Max): 102W (Tc) Operating Temperature: 150C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220-3 Package / Case: TO-220-3	1000 Order	50+: $1.3404
TPC8125LQ(S-ND	TPC8125,LQ(S	Toshiba Semiconductor and Storage	View more Series: U-MOSVI Packaging: Tape & Reel (TR) Part Status: Active FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25C: 10A (Ta) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Rds On (Max) @ Id, Vgs: 13 mOhm @ 5A, 10V Vgs(th) (Max) @ Id: 2V @ 500A Gate Charge (Qg) (Max) @ Vgs: 64nC @ 10V Vgs (Max): +20V, -25V Input Capacitance (Ciss) (Max) @ Vds: 2580pF @ 10V Power Dissipation (Max): 1W (Ta) Operating Temperature: 150C (TJ) Mounting Type: Surface Mount Supplier Device Package: 8-SOP Package / Case: 8-SOIC (0.154", 3.90mm Width)	1000 Order	1+: $0
EFC4612R-S-TR-N D	EFC4612R-S-TR	ON Semiconductor	View more Packaging: Tape & Reel (TR) Part Status: Active Operating Temperature: 150C (TJ) Mounting Type: Surface Mount Supplier Device Package: EFCP1313-4CC-037 Package / Case: 4-XFBGA	1000 Order	--
TK60E08K3S1X(S- ND	TK60E08K3,S1X(S	Toshiba Semiconductor and Storage	View more Packaging: Tube Part Status: Active FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 75V Current - Continuous Drain (Id) @ 25C: 60A Rds On (Max) @ Id, Vgs: 9 mOhm @ 30A, 10V Gate Charge (Qg) (Max) @ Vgs: 75nC @ 10V Power Dissipation (Max): 128W Mounting Type: Through Hole Supplier Device Package: TO-220-3 Package / Case: TO-220-3	1000 Order	50+: $1.2734
TPC8067-HLQ(S-N D	TPC8067-H,LQ(S	Toshiba Semiconductor and Storage	View more Series: U-MOSVII-H Packaging: Tape & Reel (TR) Part Status: Active FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25C: 9A (Ta) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Rds On (Max) @ Id, Vgs: 25 mOhm @ 4.5A, 10V Vgs(th) (Max) @ Id: 2.3V @ 100A Gate Charge (Qg) (Max) @ Vgs: 9.5nC @ 10V Vgs (Max): 20V Input Capacitance (Ciss) (Max) @ Vds: 690pF @ 10V Power Dissipation (Max): 1W (Ta) Operating Temperature: 150C (TJ) Mounting Type: Surface Mount Supplier Device Package: 8-SOP Package / Case: 8-SOIC (0.154", 3.90mm Width)	1000 Order	2500+: $0.2138
TPC8132LQ(S-ND	TPC8132,LQ(S	Toshiba Semiconductor and Storage	View more Series: U-MOSVI Packaging: Tape & Reel (TR) Part Status: Active FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 40V Current - Continuous Drain (Id) @ 25C: 7A (Ta) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Rds On (Max) @ Id, Vgs: 25 mOhm @ 3.5A, 10V Vgs(th) (Max) @ Id: 2V @ 200A Gate Charge (Qg) (Max) @ Vgs: 34nC @ 10V Vgs (Max): +20V, -25V Input Capacitance (Ciss) (Max) @ Vds: 1580pF @ 10V Power Dissipation (Max): 1W (Ta) Operating Temperature: 150C (TJ) Mounting Type: Surface Mount Supplier Device Package: 8-SOP Package / Case: 8-SOIC (0.154", 3.90mm Width)	1000 Order	2500+: $0.2565
TPC8134LQ(S-ND	TPC8134,LQ(S	Toshiba Semiconductor and Storage	View more Series: U-MOSVI Packaging: Tape & Reel (TR) Part Status: Active FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 40V Current - Continuous Drain (Id) @ 25C: 5A (Ta) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Rds On (Max) @ Id, Vgs: 52 mOhm @ 2.5A, 10V Vgs(th) (Max) @ Id: 2V @ 100A Gate Charge (Qg) (Max) @ Vgs: 20nC @ 10V Vgs (Max): +20V, -25V Input Capacitance (Ciss) (Max) @ Vds: 890pF @ 10V Power Dissipation (Max): 1W (Ta) Operating Temperature: 150C (TJ) Mounting Type: Surface Mount Supplier Device Package: 8-SOP Package / Case: 8-SOIC (0.154", 3.90mm Width)	1000 Order	2500+: $0.193
TPC8133LQ(S-ND	TPC8133,LQ(S	Toshiba Semiconductor and Storage	View more Series: U-MOSVI Packaging: Tape & Reel (TR) Part Status: Active FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 40V Current - Continuous Drain (Id) @ 25C: 9A (Ta) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Rds On (Max) @ Id, Vgs: 15 mOhm @ 4.5A, 10V Vgs(th) (Max) @ Id: 2V @ 500A Gate Charge (Qg) (Max) @ Vgs: 64nC @ 10V Vgs (Max): +20V, -25V Input Capacitance (Ciss) (Max) @ Vds: 2900pF @ 10V Power Dissipation (Max): 1W (Ta) Operating Temperature: 150C (TJ) Mounting Type: Surface Mount Supplier Device Package: 8-SOP Package / Case: 8-SOIC (0.154", 3.90mm Width)	1000 Order	2500+: $0.3715
TPCC8065-HLQ(S- ND	TPCC8065-H,LQ(S	Toshiba Semiconductor and Storage	View more Series: U-MOSVII-H Packaging: Tape & Reel (TR) Part Status: Active FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25C: 13A (Ta) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Rds On (Max) @ Id, Vgs: 11.4 mOhm @ 6.5A, 10V Vgs(th) (Max) @ Id: 2.3V @ 200A Gate Charge (Qg) (Max) @ Vgs: 20nC @ 10V Vgs (Max): 20V Input Capacitance (Ciss) (Max) @ Vds: 1350pF @ 10V Power Dissipation (Max): 700mW (Ta), 18W (Tc) Operating Temperature: 150C (TJ) Mounting Type: Surface Mount Supplier Device Package: 8-TSON Advance (3.3x3.3) Package / Case: 8-PowerVDFN	1000 Order	1+: $0
TK18E10K3S1X(S- ND	TK18E10K3,S1X(S	Toshiba Semiconductor and Storage	View more Series: U-MOSIV Packaging: Tube Part Status: Active FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 100V Current - Continuous Drain (Id) @ 25C: 18A (Ta) Rds On (Max) @ Id, Vgs: 42 mOhm @ 9A, 10V Gate Charge (Qg) (Max) @ Vgs: 33nC @ 10V Operating Temperature: 150C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220-3 Package / Case: TO-220-3	1000 Order	50+: $0.8581
ATP212-S-TL-H-N D	ATP212-S-TL-H	ON Semiconductor	View more Packaging: Tape & Reel (TR) Part Status: Obsolete Operating Temperature: 150C (TJ) Mounting Type: Surface Mount Supplier Device Package: ATPAK Package / Case: ATPAK (2 leads+tab)	1000 Order	--
SFT1423-S-TL-E- ND	SFT1423-S-TL-E	ON Semiconductor	View more Packaging: Tape & Reel (TR) Part Status: Obsolete Mounting Type: Surface Mount Supplier Device Package: TP-FA Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63	1000 Order	--
ATP207-S-TL-H-N D	ATP207-S-TL-H	ON Semiconductor	View more Packaging: Tape & Reel (TR) Part Status: Obsolete Operating Temperature: 150C (TJ) Mounting Type: Surface Mount Supplier Device Package: ATPAK Package / Case: ATPAK (2 leads+tab)	1000 Order	--
MCH6336-S-TL-E- ND	MCH6336-S-TL-E	ON Semiconductor	View more Packaging: Tape & Reel (TR) Part Status: Obsolete Mounting Type: Surface Mount Supplier Device Package: 6-MCPH Package / Case: 6-SMD, Flat Leads	1000 Order	1+: $0
MCH3478-S-TL-H- ND	MCH3478-S-TL-H	ON Semiconductor	View more Packaging: Tape & Reel (TR) Part Status: Obsolete Mounting Type: Surface Mount Supplier Device Package: 3-MCPH Package / Case: 3-SMD, Flat Leads	1000 Order	1+: $0
SCH1331-S-TL-H- ND	SCH1331-S-TL-H	ON Semiconductor	View more Packaging: Tape & Reel (TR) Part Status: Obsolete Mounting Type: Surface Mount Supplier Device Package: 6-SCH Package / Case: SOT-563, SOT-666	1000 Order	--
SCH1433-S-TL-H- ND	SCH1433-S-TL-H	ON Semiconductor	View more Packaging: Tape & Reel (TR) Part Status: Obsolete Mounting Type: Surface Mount Supplier Device Package: 6-SCH Package / Case: SOT-563, SOT-666	1000 Order	--
497-4098-5-ND	STB16NK65Z-S	STMicroelectronics	View more Series: SuperMESH Packaging: Tube Part Status: Obsolete FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 650V Current - Continuous Drain (Id) @ 25C: 13A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 500 mOhm @ 6.5A, 10V Vgs(th) (Max) @ Id: 4.5V @ 100A Gate Charge (Qg) (Max) @ Vgs: 89nC @ 10V Vgs (Max): 30V Input Capacitance (Ciss) (Max) @ Vds: 2750pF @ 25V Power Dissipation (Max): 190W (Tc) Operating Temperature: -55C ~ 150C (TJ) Mounting Type: Through Hole Supplier Device Package: I2PAK Package / Case: TO-262-3 Long Leads, IPak, TO-262AA	1000 Order	1+: $0
FDZ206P-ND	FDZ206P	ON Semiconductor	View more Series: PowerTrench Packaging: Tape & Reel (TR) Part Status: Obsolete FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25C: 13A (Ta) Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V Rds On (Max) @ Id, Vgs: 9.5 mOhm @ 13A, 4.5V Vgs(th) (Max) @ Id: 1.5V @ 250A Gate Charge (Qg) (Max) @ Vgs: 53nC @ 4.5V Vgs (Max): 12V Input Capacitance (Ciss) (Max) @ Vds: 4280pF @ 10V Power Dissipation (Max): 2.2W (Ta) Operating Temperature: -55C ~ 150C (TJ) Mounting Type: Surface Mount Supplier Device Package: 30-BGA (4x3.5) Package / Case: 30-WFBGA	1000 Order	--

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