Toshiba 8 channel source driver ic - Allicdata Electronics

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Allicdata Part#	Mft.Part#	Company	Spec.	QTY.	Pricing(USD)
2SC5231A-8-TL-E -ND	2SC5231A-8-TL-E	ON Semiconductor	View more Packaging: Tape & Reel (TR) Part Status: Obsolete Transistor Type: NPN Voltage - Collector Emitter Breakdown (Max): 10V Frequency - Transition: 7GHz Noise Figure (dB Typ @ f): 1dB @ 1GHz Gain: 12dB Power - Max: 100mW DC Current Gain (hFE) (Min) @ Ic, Vce: 90 @ 20mA, 5V Current - Collector (Ic) (Max): 70mA Operating Temperature: 150C (TJ) Mounting Type: Surface Mount Package / Case: SC-75, SOT-416 Supplier Device Package: SMCP	1000 Order	--
MT3S20P(TE12LF) TR-ND	MT3S20P(TE12L,F )	Toshiba Semiconductor and Storage	View more Packaging: Tape & Reel (TR) Part Status: Active Transistor Type: NPN Voltage - Collector Emitter Breakdown (Max): 12V Frequency - Transition: 7GHz Noise Figure (dB Typ @ f): 1.45dB @ 1GHz Gain: 16.5dB Power - Max: 1.8W DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 50mA, 5V Current - Collector (Ic) (Max): 80mA Operating Temperature: 150C (TJ) Mounting Type: Surface Mount Package / Case: TO-243AA Supplier Device Package: PW-MINI	1000 Order	1+: $0
2SC5087YTE85LFT R-ND	2SC5087YTE85LF	Toshiba Semiconductor and Storage	View more Packaging: Tape & Reel (TR) Part Status: Active Transistor Type: NPN Voltage - Collector Emitter Breakdown (Max): 12V Frequency - Transition: 7GHz Noise Figure (dB Typ @ f): 1.1dB @ 1GHz Gain: 13dB Power - Max: 150mW DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 20mA, 10V Current - Collector (Ic) (Max): 80mA Operating Temperature: 125C (TJ) Mounting Type: Surface Mount Package / Case: SC-61AA Supplier Device Package: SMQ	1000 Order	1+: $0
MT3S111P(TE12LF )TR-ND	MT3S111P(TE12L, F)	Toshiba Semiconductor and Storage	View more Packaging: Tape & Reel (TR) Part Status: Active Transistor Type: NPN Voltage - Collector Emitter Breakdown (Max): 6V Frequency - Transition: 8GHz Noise Figure (dB Typ @ f): 1.25dB @ 1GHz Gain: 10.5dB Power - Max: 1W DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 30mA, 5V Current - Collector (Ic) (Max): 100mA Operating Temperature: 150C (TJ) Mounting Type: Surface Mount Package / Case: TO-243AA Supplier Device Package: PW-MINI	10000 Order	1000+: $0.241 2000+: $0.2249 5000+: $0.2137 10000+: $0.2048 25000+: $0.1992
2SC5087R(TE85LF )TR-ND	2SC5087R(TE85L, F)	Toshiba Semiconductor and Storage	View more Packaging: Tape & Reel (TR) Part Status: Active Transistor Type: NPN Voltage - Collector Emitter Breakdown (Max): 12V Frequency - Transition: 8GHz Noise Figure (dB Typ @ f): 1.1dB ~ 2dB @ 1GHz Power - Max: 150mW DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 20mA, 10V Current - Collector (Ic) (Max): 80mA Operating Temperature: 125C (TJ) Mounting Type: Surface Mount Package / Case: SC-61AA Supplier Device Package: SMQ	3000 Order	3000+: $0.0644
MT3S113P(TE12LF )TR-ND	MT3S113P(TE12L, F)	Toshiba Semiconductor and Storage	View more Packaging: Tape & Reel (TR) Part Status: Active Transistor Type: NPN Voltage - Collector Emitter Breakdown (Max): 5.3V Frequency - Transition: 7.7GHz Noise Figure (dB Typ @ f): 1.45dB @ 1GHz Gain: 10.5dB Power - Max: 1.6W DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 30mA, 5V Current - Collector (Ic) (Max): 100mA Operating Temperature: 150C (TJ) Mounting Type: Surface Mount Package / Case: TO-243AA Supplier Device Package: PW-MINI	1000 Order	1000+: $0.2665 2000+: $0.2487 5000+: $0.2363 10000+: $0.2265 25000+: $0.2203
MT3S20TU(TE85L) TR-ND	MT3S20TU(TE85L)	Toshiba Semiconductor and Storage	View more Packaging: Tape & Reel (TR) Part Status: Active Transistor Type: NPN Voltage - Collector Emitter Breakdown (Max): 12V Frequency - Transition: 7GHz Noise Figure (dB Typ @ f): 1.45dB @ 20mA, 5V Gain: 12dB Power - Max: 900mW DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 50mA, 5V Current - Collector (Ic) (Max): 80mA Operating Temperature: 150C (TJ) Mounting Type: Surface Mount Package / Case: 3-SMD, Flat Leads Supplier Device Package: UFM	1000 Order	1+: $0
2SC4915-OLFTR-N D	2SC4915-O,LF	Toshiba Semiconductor and Storage	View more Packaging: Tape & Reel (TR) Part Status: Active Transistor Type: NPN Voltage - Collector Emitter Breakdown (Max): 30V Frequency - Transition: 550MHz Noise Figure (dB Typ @ f): 2.3dB ~ 5dB @ 100MHz Gain: 17dB ~ 23dB Power - Max: 100mW DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 1mA, 6V Current - Collector (Ic) (Max): 20mA Operating Temperature: 125C (TJ) Mounting Type: Surface Mount Package / Case: SC-75, SOT-416 Supplier Device Package: SSM	1000 Order	3000+: $0.0669 6000+: $0.0632 15000+: $0.0576 30000+: $0.0539 75000+: $0.0483
2SC5066-YLFCT-N D	2SC5066-Y,LF	Toshiba Semiconductor and Storage	View more Packaging: Cut Tape (CT) Part Status: Discontinued at Digi-Key Transistor Type: NPN Voltage - Collector Emitter Breakdown (Max): 12V Frequency - Transition: 7GHz Noise Figure (dB Typ @ f): 1dB @ 500MHz Power - Max: 100mW DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 10mA, 5V Current - Collector (Ic) (Max): 30mA Operating Temperature: 125C (TJ) Mounting Type: Surface Mount Package / Case: SC-75, SOT-416 Supplier Device Package: SSM	1000 Order	1+: $0
2SC2714-Y(TE85L F)TR-ND	2SC2714-Y(TE85L ,F)	Toshiba Semiconductor and Storage	View more Packaging: Tape & Reel (TR) Part Status: Active Transistor Type: NPN Voltage - Collector Emitter Breakdown (Max): 30V Frequency - Transition: 550MHz Noise Figure (dB Typ @ f): 2.5dB @ 100MHz Gain: 23dB Power - Max: 100mW DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 1mA, 6V Current - Collector (Ic) (Max): 20mA Operating Temperature: 125C (TJ) Mounting Type: Surface Mount Package / Case: TO-236-3, SC-59, SOT-23-3 Supplier Device Package: S-Mini	1000 Order	1+: $0
2SC5088-O(TE85L F)TR-ND	2SC5088-O(TE85L ,F)	Toshiba Semiconductor and Storage	View more Packaging: Tape & Reel (TR) Part Status: Obsolete Transistor Type: NPN Voltage - Collector Emitter Breakdown (Max): 12V Frequency - Transition: 7GHz Noise Figure (dB Typ @ f): 1dB @ 500MHz Gain: 18dB Power - Max: 100mW DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 20mA, 10V Current - Collector (Ic) (Max): 80mA Operating Temperature: 125C (TJ) Mounting Type: Surface Mount Package / Case: SC-82A, SOT-343 Supplier Device Package: USQ	1000 Order	1+: $0
2SC5084YTE85LFC T-ND	2SC5084YTE85LF	Toshiba Semiconductor and Storage	View more Packaging: Cut Tape (CT) Part Status: Discontinued at Digi-Key Transistor Type: NPN Voltage - Collector Emitter Breakdown (Max): 12V Frequency - Transition: 7GHz Noise Figure (dB Typ @ f): 1.1dB @ 1GHz Gain: 11dB Power - Max: 150mW DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 20mA, 10V Current - Collector (Ic) (Max): 80mA Operating Temperature: 125C (TJ) Mounting Type: Surface Mount Package / Case: TO-236-3, SC-59, SOT-23-3 Supplier Device Package: SC-59	1236 Order	1+: $0.3024 10+: $0.2363 25+: $0.1993 100+: $0.1622 250+: $0.1344 500+: $0.1112 1000+: $0.0834
2SC5065-O(TE85L F)TR-ND	2SC5065-O(TE85L ,F)	Toshiba Semiconductor and Storage	View more Packaging: Tape & Reel (TR) Part Status: Active Transistor Type: NPN Voltage - Collector Emitter Breakdown (Max): 12V Frequency - Transition: 7GHz Noise Figure (dB Typ @ f): 1dB @ 500MHz Power - Max: 100mW DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V Current - Collector (Ic) (Max): 30mA Operating Temperature: 125C (TJ) Mounting Type: Surface Mount Package / Case: SC-70, SOT-323 Supplier Device Package: USM	1000 Order	1+: $0
2SC5065-Y(TE85L F)TR-ND	2SC5065-Y(TE85L ,F)	Toshiba Semiconductor and Storage	View more Packaging: Tape & Reel (TR) Part Status: Active Transistor Type: NPN Voltage - Collector Emitter Breakdown (Max): 12V Frequency - Transition: 7GHz Noise Figure (dB Typ @ f): 1.1dB @ 1GHz Gain: 12dB ~ 17dB Power - Max: 100mW DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 10mA, 5V Current - Collector (Ic) (Max): 30mA Operating Temperature: 125C (TJ) Mounting Type: Surface Mount Package / Case: SC-70, SOT-323 Supplier Device Package: USM	6000 Order	3000+: $0.0742 6000+: $0.0697
2SC5084-O(TE85L F)TR-ND	2SC5084-O(TE85L ,F)	Toshiba Semiconductor and Storage	View more Packaging: Tape & Reel (TR) Part Status: Active Transistor Type: NPN Voltage - Collector Emitter Breakdown (Max): 12V Frequency - Transition: 7GHz Noise Figure (dB Typ @ f): 1.1dB @ 1GHz Gain: 11dB Power - Max: 150mW DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 20mA, 10V Current - Collector (Ic) (Max): 80mA Operating Temperature: 125C (TJ) Mounting Type: Surface Mount Package / Case: TO-236-3, SC-59, SOT-23-3 Supplier Device Package: S-Mini	1000 Order	1+: $0
2SC5087-O(TE85L F)TR-ND	2SC5087-O(TE85L ,F)	Toshiba Semiconductor and Storage	View more Packaging: Tape & Reel (TR) Part Status: Active Transistor Type: NPN Voltage - Collector Emitter Breakdown (Max): 12V Frequency - Transition: 7GHz Noise Figure (dB Typ @ f): 1dB ~ 1.1dB @ 500MHz ~ 1GHz Power - Max: 150mW DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 20mA, 10V Current - Collector (Ic) (Max): 80mA Operating Temperature: 125C (TJ) Mounting Type: Surface Mount Package / Case: SC-61AA Supplier Device Package: SMQ	3000 Order	3000+: $0.0644
2SC5085-O(TE85L F)TR-ND	2SC5085-O(TE85L ,F)	Toshiba Semiconductor and Storage	View more Packaging: Tape & Reel (TR) Part Status: Active Transistor Type: NPN Voltage - Collector Emitter Breakdown (Max): 12V Frequency - Transition: 7GHz Noise Figure (dB Typ @ f): 1dB @ 500MHz Power - Max: 100mW DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 20mA, 10V Current - Collector (Ic) (Max): 80mA Operating Temperature: 125C (TJ) Mounting Type: Surface Mount Package / Case: SC-70, SOT-323 Supplier Device Package: USM	1000 Order	1+: $0
2SC5086-YLFTR-N D	2SC5086-Y,LF	Toshiba Semiconductor and Storage	View more Packaging: Tape & Reel (TR) Part Status: Active Transistor Type: NPN Voltage - Collector Emitter Breakdown (Max): 12V Frequency - Transition: 7GHz Noise Figure (dB Typ @ f): 1dB @ 500MHz Power - Max: 100mW DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 20mA, 10V Current - Collector (Ic) (Max): 80mA Operating Temperature: 125C (TJ) Mounting Type: Surface Mount Package / Case: SC-75, SOT-416 Supplier Device Package: SSM	1000 Order	3000+: $0.0538
2SC4215-Y(TE85L F)TR-ND	2SC4215-Y(TE85L ,F)	Toshiba Semiconductor and Storage	View more Packaging: Tape & Reel (TR) Part Status: Active Transistor Type: NPN Voltage - Collector Emitter Breakdown (Max): 30V Frequency - Transition: 550MHz Noise Figure (dB Typ @ f): 2dB ~ 5dB @ 100MHz Gain: 17dB ~ 23dB Power - Max: 100mW DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 1mA, 6V Current - Collector (Ic) (Max): 20mA Operating Temperature: 125C (TJ) Mounting Type: Surface Mount Package / Case: SC-70, SOT-323 Supplier Device Package: USM	3000 Order	3000+: $0.0703
2SC4215-O(TE85L F)TR-ND	2SC4215-O(TE85L ,F)	Toshiba Semiconductor and Storage	View more Packaging: Tape & Reel (TR) Part Status: Not For New Designs Transistor Type: NPN Voltage - Collector Emitter Breakdown (Max): 30V Frequency - Transition: 550MHz Noise Figure (dB Typ @ f): 5dB @ 100MHz Gain: 23dB Power - Max: 100mW DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 1mA, 6V Current - Collector (Ic) (Max): 20mA Operating Temperature: 125C (TJ) Mounting Type: Surface Mount Package / Case: SC-70, SOT-323 Supplier Device Package: USM	3000 Order	3000+: $0.0607
2SC5108-YLFCT-N D	2SC5108-Y,LF	Toshiba Semiconductor and Storage	View more Packaging: Cut Tape (CT) Part Status: Discontinued at Digi-Key Transistor Type: NPN Voltage - Collector Emitter Breakdown (Max): 10V Frequency - Transition: 6GHz Gain: 11dB Power - Max: 100mW DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 5mA, 5V Current - Collector (Ic) (Max): 30mA Operating Temperature: 125C (TJ) Mounting Type: Surface Mount Package / Case: SC-75, SOT-416 Supplier Device Package: SSM	1000 Order	1+: $0
2SC5095-R(TE85L F)TR-ND	2SC5095-R(TE85L ,F)	Toshiba Semiconductor and Storage	View more Packaging: Tape & Reel (TR) Part Status: Active Transistor Type: NPN Voltage - Collector Emitter Breakdown (Max): 10V Frequency - Transition: 10GHz Noise Figure (dB Typ @ f): 1.8dB @ 2GHz Gain: 13dB ~ 7.5dB Power - Max: 100mW DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 7mA, 6V Current - Collector (Ic) (Max): 15mA Operating Temperature: 125C (TJ) Mounting Type: Surface Mount Package / Case: SC-70, SOT-323 Supplier Device Package: SC-70	1000 Order	1+: $0
2SC5086-OLFTR-N D	2SC5086-O,LF	Toshiba Semiconductor and Storage	View more Packaging: Tape & Reel (TR) Part Status: Active Transistor Type: NPN Voltage - Collector Emitter Breakdown (Max): 12V Frequency - Transition: 7GHz Noise Figure (dB Typ @ f): 1dB @ 500MHz Power - Max: 100mW DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 20mA, 10V Current - Collector (Ic) (Max): 80mA Operating Temperature: 125C (TJ) Mounting Type: Surface Mount Package / Case: SC-75, SOT-416 Supplier Device Package: SSM	1000 Order	3000+: $0.0538 6000+: $0.0511 15000+: $0.049 30000+: $0.0477 75000+: $0.0461
2SC5095-O(TE85L F)TR-ND	2SC5095-O(TE85L ,F)	Toshiba Semiconductor and Storage	View more Packaging: Tape & Reel (TR) Part Status: Active Transistor Type: NPN Voltage - Collector Emitter Breakdown (Max): 10V Frequency - Transition: 10GHz Noise Figure (dB Typ @ f): 1.8dB @ 2GHz Gain: 13dB ~ 7dB Power - Max: 100mW DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 7mA, 6V Current - Collector (Ic) (Max): 15mA Operating Temperature: 125C (TJ) Mounting Type: Surface Mount Package / Case: SC-70, SOT-323 Supplier Device Package: SC-70	1000 Order	1+: $0
MT3S16U(TE85LF) TR-ND	MT3S16U(TE85L,F )	Toshiba Semiconductor and Storage	View more Packaging: Tape & Reel (TR) Part Status: Active Transistor Type: NPN Voltage - Collector Emitter Breakdown (Max): 5V Frequency - Transition: 4GHz Noise Figure (dB Typ @ f): 2.4dB @ 1GHz Gain: 4.5dBi Power - Max: 100mW DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 5mA, 1V Current - Collector (Ic) (Max): 60mA Operating Temperature: 125C (TJ) Mounting Type: Surface Mount Package / Case: SC-70, SOT-323 Supplier Device Package: USM	3000 Order	3000+: $0.0635
MT3S113TULFTR-N D	MT3S113TU,LF	Toshiba Semiconductor and Storage	View more Packaging: Tape & Reel (TR) Part Status: Active Transistor Type: NPN Voltage - Collector Emitter Breakdown (Max): 5.3V Frequency - Transition: 11.2GHz Noise Figure (dB Typ @ f): 1.45dB @ 1GHz Gain: 12.5dB Power - Max: 900mW DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 30mA, 5V Current - Collector (Ic) (Max): 100mA Operating Temperature: 150C (TJ) Mounting Type: Surface Mount Package / Case: 3-SMD, Flat Leads Supplier Device Package: UFM	6000 Order	3000+: $0.1614 6000+: $0.1533 15000+: $0.147 30000+: $0.143
2SC5096-RLFTR-N D	2SC5096-R,LF	Toshiba Semiconductor and Storage	View more Packaging: Tape & Reel (TR) Part Status: Obsolete Transistor Type: NPN Voltage - Collector Emitter Breakdown (Max): 10V Frequency - Transition: 10GHz Noise Figure (dB Typ @ f): 1.4dB @ 1GHz Gain: 1.4dB Power - Max: 100mW DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 7mA, 6V Current - Collector (Ic) (Max): 15mA Operating Temperature: 125C (TJ) Mounting Type: Surface Mount Package / Case: SC-75, SOT-416 Supplier Device Package: SSM	1000 Order	1+: $0
2SC5085-Y(TE85L F)TR-ND	2SC5085-Y(TE85L ,F)	Toshiba Semiconductor and Storage	View more Packaging: Tape & Reel (TR) Part Status: Active Transistor Type: NPN Voltage - Collector Emitter Breakdown (Max): 12V Frequency - Transition: 7GHz Noise Figure (dB Typ @ f): 1.1dB @ 1GHz Gain: 11dB ~ 16.5dB Power - Max: 100mW DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 20mA, 10V Current - Collector (Ic) (Max): 80mA Operating Temperature: 125C (TJ) Mounting Type: Surface Mount Package / Case: SC-70, SOT-323 Supplier Device Package: USM	1000 Order	1+: $0
MT3S113(TE85LF) TR-ND	MT3S113(TE85L,F )	Toshiba Semiconductor and Storage	View more Packaging: Tape & Reel (TR) Part Status: Active Transistor Type: NPN Voltage - Collector Emitter Breakdown (Max): 5.3V Frequency - Transition: 12.5GHz Noise Figure (dB Typ @ f): 1.45dB @ 1GHz Gain: 11.8dB Power - Max: 800mW DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 30mA, 5V Current - Collector (Ic) (Max): 100mA Operating Temperature: 150C (TJ) Mounting Type: Surface Mount Package / Case: TO-236-3, SC-59, SOT-23-3 Supplier Device Package: S-Mini	6000 Order	3000+: $0.1764 6000+: $0.1676 15000+: $0.1607 30000+: $0.1562
2SC5066-OLFTR-N D	2SC5066-O,LF	Toshiba Semiconductor and Storage	View more Packaging: Tape & Reel (TR) Part Status: Active Transistor Type: NPN Voltage - Collector Emitter Breakdown (Max): 12V Frequency - Transition: 7GHz Noise Figure (dB Typ @ f): 1dB @ 500MHz Power - Max: 100mW DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V Current - Collector (Ic) (Max): 30mA Operating Temperature: 125C (TJ) Mounting Type: Surface Mount Package / Case: SC-75, SOT-416 Supplier Device Package: SSM	3000 Order	3000+: $0.0538 6000+: $0.0511 15000+: $0.049 30000+: $0.0477 75000+: $0.0461
MT3S111(TE85LF) TR-ND	MT3S111(TE85L,F )	Toshiba Semiconductor and Storage	View more Packaging: Tape & Reel (TR) Part Status: Active Transistor Type: NPN Voltage - Collector Emitter Breakdown (Max): 6V Frequency - Transition: 11.5GHz Noise Figure (dB Typ @ f): 1.2dB @ 1GHz Gain: 12dB Power - Max: 700mW DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 30mA, 5V Current - Collector (Ic) (Max): 100mA Operating Temperature: 150C (TJ) Mounting Type: Surface Mount Package / Case: TO-236-3, SC-59, SOT-23-3 Supplier Device Package: S-Mini	6000 Order	3000+: $0.1561 6000+: $0.1483 15000+: $0.1422 30000+: $0.1383
2SC4915-YLFTR-N D	2SC4915-Y,LF	Toshiba Semiconductor and Storage	View more Packaging: Tape & Reel (TR) Part Status: Active Transistor Type: NPN Voltage - Collector Emitter Breakdown (Max): 30V Frequency - Transition: 550MHz Noise Figure (dB Typ @ f): 2.3dB ~ 5dB @ 100MHz Gain: 17dB ~ 23dB Power - Max: 100mW DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 1mA, 6V Current - Collector (Ic) (Max): 20mA Operating Temperature: 125C (TJ) Mounting Type: Surface Mount Package / Case: SC-75, SOT-416 Supplier Device Package: SSM	1000 Order	1+: $0
2SC2714-O(TE85L F)TR-ND	2SC2714-O(TE85L ,F)	Toshiba Semiconductor and Storage	View more Packaging: Tape & Reel (TR) Part Status: Active Transistor Type: NPN Voltage - Collector Emitter Breakdown (Max): 30V Frequency - Transition: 550MHz Noise Figure (dB Typ @ f): 2.5dB @ 100MHz Gain: 23dB Power - Max: 100mW DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 1mA, 6V Current - Collector (Ic) (Max): 20mA Operating Temperature: 125C (TJ) Mounting Type: Surface Mount Package / Case: TO-236-3, SC-59, SOT-23-3 Supplier Device Package: S-Mini	3000 Order	3000+: $0.0377
HN3C10FUTE85LFT R-ND	HN3C10FUTE85LF	Toshiba Semiconductor and Storage	View more Packaging: Tape & Reel (TR) Part Status: Active Transistor Type: 2 NPN (Dual) Voltage - Collector Emitter Breakdown (Max): 12V Frequency - Transition: 7GHz Noise Figure (dB Typ @ f): 1.1dB @ 1GHz Gain: 11.5dB Power - Max: 200mW DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 20mA, 10V Current - Collector (Ic) (Max): 80mA Mounting Type: Surface Mount Package / Case: 6-TSSOP, SC-88, SOT-363 Supplier Device Package: US6	1000 Order	1+: $0
UTV080-ND	UTV080	Microsemi Corporation	View more Packaging: Bulk Part Status: Active Transistor Type: NPN Voltage - Collector Emitter Breakdown (Max): 28V Frequency - Transition: 470MHz ~ 860MHz Gain: 9dB ~ 10dB Power - Max: 65W DC Current Gain (hFE) (Min) @ Ic, Vce: 10 @ 500mA, 5V Current - Collector (Ic) (Max): 2.5A Operating Temperature: 200C (TJ) Mounting Type: Channel, DIN Rail Mount Package / Case: 55JV Supplier Device Package: 55JV	1000 Order	25+: $160.873
MAX2601ESA-ND	MAX2601ESA	Maxim Integrated	View more Packaging: Tube Part Status: Discontinued at Digi-Key Transistor Type: NPN Voltage - Collector Emitter Breakdown (Max): 15V Frequency - Transition: 1GHz Noise Figure (dB Typ @ f): 3.3dB @ 836MHz Gain: 11.6dB Power - Max: 6.4W DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 250mA, 3V Current - Collector (Ic) (Max): 1.2A Operating Temperature: 150C (TJ) Mounting Type: Surface Mount Package / Case: 8-SOIC (0.154", 3.90mm Width) Exposed Pad Supplier Device Package: 8-SOIC-EP Base Part Number: MAX2601	1000 Order	1+: $0
MRF5812GR2TR-ND	MRF5812GR2	Microsemi Corporation	View more Packaging: Tape & Reel (TR) Part Status: Obsolete Transistor Type: NPN Voltage - Collector Emitter Breakdown (Max): 15V Frequency - Transition: 5GHz Noise Figure (dB Typ @ f): 2dB ~ 3dB @ 500MHz Gain: 13dB ~ 15.5dB Power - Max: 1.25W DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 50mA, 5V Current - Collector (Ic) (Max): 200mA Mounting Type: Surface Mount Package / Case: 8-SOIC (0.154", 3.90mm Width) Supplier Device Package: 8-SO Base Part Number: MRF5812	1000 Order	1+: $0
MRF5812GR1TR-ND	MRF5812GR1	Microsemi Corporation	View more Packaging: Tape & Reel (TR) Part Status: Obsolete Transistor Type: NPN Voltage - Collector Emitter Breakdown (Max): 15V Frequency - Transition: 5GHz Noise Figure (dB Typ @ f): 2dB ~ 3dB @ 500MHz Gain: 13dB ~ 15.5dB Power - Max: 1.25W DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 50mA, 5V Current - Collector (Ic) (Max): 200mA Mounting Type: Surface Mount Package / Case: 8-SOIC (0.154", 3.90mm Width) Supplier Device Package: 8-SO Base Part Number: MRF5812	1000 Order	--
MRF4427R1-ND	MRF4427R1	Microsemi Corporation	View more Packaging: Bulk Part Status: Obsolete Transistor Type: NPN Voltage - Collector Emitter Breakdown (Max): 20V Gain: 20dB Power - Max: 1.5W DC Current Gain (hFE) (Min) @ Ic, Vce: 10 @ 10mA, 5V Current - Collector (Ic) (Max): 400mA Mounting Type: Surface Mount Package / Case: 8-SOIC (0.154", 3.90mm Width) Supplier Device Package: 8-dBGA (2x1.5)	1000 Order	1+: $0
MRF4427-ND	MRF4427	Microsemi Corporation	View more Packaging: Bulk Part Status: Obsolete Transistor Type: NPN Voltage - Collector Emitter Breakdown (Max): 20V Gain: 20dB Power - Max: 1.5W DC Current Gain (hFE) (Min) @ Ic, Vce: 10 @ 10mA, 5V Current - Collector (Ic) (Max): 400mA Mounting Type: Surface Mount Package / Case: 8-SOIC (0.154", 3.90mm Width) Supplier Device Package: 8-SO	1000 Order	--

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