Allicdata Part #: | IRFR9310TRRPBF-ND |
Manufacturer Part#: |
IRFR9310TRRPBF |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Vishay Siliconix |
Short Description: | MOSFET P-CH 400V 1.8A DPAK |
More Detail: | P-Channel 400V 1.8A (Tc) 50W (Tc) Surface Mount D-... |
DataSheet: | IRFR9310TRRPBF Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
Vgs(th) (Max) @ Id: | 4V @ 250µA |
Package / Case: | TO-252-3, DPak (2 Leads + Tab), SC-63 |
Supplier Device Package: | D-Pak |
Mounting Type: | Surface Mount |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Power Dissipation (Max): | 50W (Tc) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 270pF @ 25V |
Vgs (Max): | ±20V |
Gate Charge (Qg) (Max) @ Vgs: | 13nC @ 10V |
Series: | -- |
Rds On (Max) @ Id, Vgs: | 7 Ohm @ 1.1A, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 10V |
Current - Continuous Drain (Id) @ 25°C: | 1.8A (Tc) |
Drain to Source Voltage (Vdss): | 400V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | P-Channel |
Part Status: | Obsolete |
Packaging: | Tape & Reel (TR) |
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The IRFR9310TRRPBF is a single, advanced SIP (Small Outline Package) MOSFET (Metal Oxide Semiconductor Field-Effect Transistor). This transistor is a fast switching, reliable, low threshold voltage N-channel MOSFET designed to be a general purpose device. This device features low on-state resistance RDS(on) and fast switching speed, making it suitable for a variety of applications that require a high concentration of energy.
There are a wide range of applications for the IRFR9310TRRPBF, including high speed logic circuits, low voltage DC-DC converters, power management applications, and high current switching applications. It can also be used in electronic circuits that require a fast switching time and good on-state resistance.
The working principle of the IRFR9310TRRPBF is based on the principle of Metal Oxide Semiconductor (MOS) technology. This technology utilizes a gate voltage to control the current flow through the semiconductor material. The gate voltage is applied to the gate of the MOSFET and creates an electric field, which then forms a channel for current flow across the semiconductor material.
When the gate voltage is increased above the threshold voltage of the device, the transistor is turned on, allowing current to flow between the drain and the source terminals. The drain current is then controlled by the gate voltage, allowing easy control of the amount of current being flowing through the device.
The IRFR9310TRRPBF is designed to be able to withstand high temperatures and is capable of operating over a wide range of temperature. Its drain-source breakdown voltage (BVDSS) is rated at 75V, ensuring that it can handle high voltage applications, while its continuous drain current rating (ID) is 8A, making it suitable for high current applications.
The IRFR9310TRRPBF is also designed to be a reliable device, featuring a maximum junction temperature rating of 125°C, and an operating temperature range of -55°C to 150°C. This ensures that the device is suitable for use in all kinds of environments, from cold temperatures to high temperature, high load conditions.
The device also features a low input capacitance, making it suitable for high speed switching applications. The on-state resistance (RDS(on)) is also low, with a maximum rating of 0.055Ω. The fast switching speed of the device and the low input capacitance make it an ideal choice for a wide range of applications and for designing high speed logic circuits.
The IRFR9310TRRPBF is a reliable, versatile device that is ideal for a variety of applications that require fast switching speeds and low on-state resistance. Its advanced Small Outline Package (SOP) technology makes it a suitable choice for use in a wide range of electronic circuits and systems.
The specific data is subject to PDF, and the above content is for reference
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