Allicdata Part #: | IRFR3706TRLPBF-ND |
Manufacturer Part#: |
IRFR3706TRLPBF |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Infineon Technologies |
Short Description: | MOSFET N-CH 20V 75A DPAK |
More Detail: | N-Channel 20V 75A (Tc) 88W (Tc) Surface Mount D-Pa... |
DataSheet: | IRFR3706TRLPBF Datasheet/PDF |
Quantity: | 1000 |
Series: | HEXFET® |
Packaging: | Tape & Reel (TR) |
Part Status: | Obsolete |
FET Type: | N-Channel |
Technology: | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): | 20V |
Current - Continuous Drain (Id) @ 25°C: | 75A (Tc) |
Drive Voltage (Max Rds On, Min Rds On): | 2.8V, 10V |
Rds On (Max) @ Id, Vgs: | 9 mOhm @ 15A, 10V |
Vgs(th) (Max) @ Id: | 2V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs: | 35nC @ 4.5V |
Vgs (Max): | ±12V |
Input Capacitance (Ciss) (Max) @ Vds: | 2410pF @ 10V |
FET Feature: | -- |
Power Dissipation (Max): | 88W (Tc) |
Operating Temperature: | -55°C ~ 175°C (TJ) |
Mounting Type: | Surface Mount |
Supplier Device Package: | D-Pak |
Package / Case: | TO-252-3, DPak (2 Leads + Tab), SC-63 |
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Introduction to IRFR3706TRLPBF Application Field and Working Principle
The IRFR3706TRLPBF is a logic level, N-channel MOSFET that operates on a maximum supply voltage of 30V. It is a part of a series of Field Effect Transistors (FETs), which are used to amplify or switch the signals. It comes with a drain to source breakdown voltage of 60V, a gate source voltage +/- 20V and a drain source on resistance of 0.5 ohm max. It is highly efficient, has excellent switching characteristics and a wide range of operating conditions. In this article, we will discuss the application field and working principle of IRFR3706TRLPBF.
Application Field
The IRFR3706TRLPBF is an ideal choice for many power and battery applications, including those in the automotive, industrial, and telecommunications realms. This MOSFET can be used to amplify gate signals, switch power, or amplify audio signals in car audio systems. It is widely used as a driver for high power applications including sonar arrays and television power supplies. Additionally, because of its low Rds(on), it makes an ideal switch for high frequency applications such as wireless communications systems and wireless antenna modules.
In the automotive industry, IRFR3706TRLPBF can be used in a variety of applications from controlling the fuel injectors to actuating the brake switches. It is also commonly used in EV chargers for switching purposes, for charging and discharging energy circuits, and for managing other electrical devices such as pumps, gauges, and cameras. In the industrial world, it is used for device control and energy management, such as controlling the speed of a motor or controlling the temperature of a process. It is also used to regulate the power distribution of industrial devices such as power supplies, drives, and robots.
Finally, the IRFR3706TRLPBF can be used in the telecommunications industry for a variety of purposes, such as controlling transmitters, modems, amplifiers, and routers. It is also widely used in mobile phones, making it a versatile and reliable component in the production of these devices.
Working Principle
The IRFR3706TRLPBF is a MOSFET, which stands for Metal-Oxide-Semiconductor Field Effect Transistor and is the most widely used type of transistor. It operates by controlling a voltage or current across a channel between two different nodes. The transistor works by using a gate electrode to control the width of a conducting channel. This channel allows current to flow when the voltage applied to it is above a certain threshold.When a voltage is applied to the gate, it creates an electric field which, in turn, changes the resistance between the source and the drain electrodes. When the source and drain are positively charged, current flows from the source to the drain; however, when the source and drain are negatively charged, current does not flow. This is known as the transistor\'s "on-off" switching action.The IRFR3706TRLPBF is designed with a drain-source voltage of 30V, meaning that it can handle higher voltages and currents than other types of transistors. Its gate-source voltage of +/-20V ensures that it can be used for a wide range of applications, from switching audio signals to controlling power supplies. Its low Rds(on) of 0.5 ohms makes it ideal for high frequency applications such as wireless communications systems and wireless antenna modules.
Conclusion
The IRFR3706TRLPBF is a versatile and reliable field effect transistor that can be used in a variety of applications, from amplifying audio signals to controlling power supplies. Its low Rds(on) makes it ideal for high frequency applications, while its high drain-source voltage of 30V and gate-source voltage of +/-20V make it suitable for a wide range of applications. Thanks to its excellent switching characteristics, this MOSFET is a great choice for those looking for a reliable and efficient FET.
The specific data is subject to PDF, and the above content is for reference
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