IRFR12N25DCTRRP

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IRFR12N25DCTRRP is a power Metal-Oxide-Semiconductor Field-Effect Transistor (MOSFET) that has a maximum drain source voltage of ±25V and a drain current maximum rating of 10A. This transistor is an N-channel enhancement type, meaning that it requires a positive voltage input to turn on. IRFR12N25DCTRRP is a popular choice when creating power management circuits due to its low-impedance state and fast switching.

This MOSFET is constructed in an 8-pin TO-220 package and can handle a maximum power dissipation of 32W. Additionally, its RDS(on) resistance value is 8.5 milli-Ohms, making it a great choice for low power applications. It is also RoHS-compliant, which increases its viability in a variety of applications.

The IRFR12N25DCTRRP is commonly used in high power switching and amplifier applications such as Class-D amplifiers and power management circuits. Additionally, it is an ideal choice for applications where fast switching, low on-state resistance, and high peak currents are required. It is also used in H-bridge motor drivers, DC-DC converters, and as an alternative to mechanical relays.

The basic principle behind how this MOSFET works is simple: when a positive voltage is applied to the gate (VG), it will form an inversion layer of electrons called the “channel”, which provides a path between the source and the drain (VDS). This channel, commonly known as the “on state”, allows current to flow freely. When the voltage at the gate is reduced, the inversion layer of electrons between the source and the drain will collapse, thereby reducing the conduction and blocking the path for current (the “off state”). This is the basic principle of how a MOSFET works.

In summary, IRFR12N25DCTRRP is a high power N-channel MOSFET in an 8-pin TO-220 package. It has a maximum drain source voltage of ±25V and a drain current maximum rating of 10A. It is RoHS-compliant and suitable for low power applications due to its low RDS(on) resistance value. Common applications include high power switching, Class-D amplifiers, power management, and H-bridge motor drivers. The working principle behind this MOSFET is simple: when a positive voltage is applied to the gate, it forms an inversion layer of electrons that provide a path between the source and the drain which allows current to flow. When the voltage at the gate is reduced, the inversion layer of electrons is eliminated, resulting in the “off” state.

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