IRFR3412TRRPBF

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The IRFR3412TRRPBF is a N-Channel MOSFET transistor with a static drain-source on-resistance of 17.1 mΩ. This MOSFET has a total gate charge of 68.7 nC and a maximum continuous drain current of 56 A. The TO-220AB package of this MOSFET transistor makes it ideal for high power applications. The maximum junction temperature of the IRFR3412TRRPBF is 175°C which allows it to be used in high temperature environments.The IRFR3412TRRPBF has a broad range of applications including computer power supplies, automotive power electronics, DC-DC converters, display controllers, and programmable logic controllers. It is also suitable for lithography and solar panel applications. This transistor can also be used as an analog switch in radio frequency (RF) applications. The IRFR3412TRRPBF is a fast switching MOSFET transistor with a maximum Rise and Fall time of 28 ns and 21 ns respectively. Since this MOSFET has a positive temperature coefficient, it is able to operate with high switching speed and efficiency. In addition, it has a very wide amplitude range, which makes it suitable for high power audio applications. The working principle of the IRFR3412TRRPBF is based on the field effect. The transistor is composed of two terminals, namely a source and a drain. When a voltage is applied to the gate terminal, an elecrtostatic field is induced in the vicinity of the gate which modulates the conductivity of the channel between the source and the drain. This in turn affects the current flow between the two terminals. The amount of current that can flow through the channel is dependent on the voltage applied to the gate terminal, and the voltage applied across the drain and source is proportional to the channel resistance. This relationship is used to adjust the operating parameters of the MOSFET such as its on-state, off-state, and switching speed.The IRFR3412TRRPBF is a single-drain, N-channel MOSFET transistor which is best suited for power conversion application. Its small size, high current, and fast switching speed make it an ideal solution for high power audio applications. Its static drain-source on-resistance of 17.1 mΩ and its maximum continuous drain current of 56 A make it suitable for computer power supplies, automotive power electronics, and DC-DC converters. The transistor has a wide amplitude range, a maximum junction temperature of 175°C, and a total gate charge of 68.7 nC. Its working principle is based on the field effect, where the conductivity of the channel between the source and the drain is affected by the voltage applied to the gate terminal.

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