IRFR3706CTRRPBF

Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us:   sales@allicdata.com

The IRFR3706CTRRPBF is a single N-channel MOSFET (metal-oxide-semiconductor field-effect-transistor) manufactured by International Rectifier. It is the member of metal-oxide-semiconductor field-effect-transistors (MOSFETs) family and belongs to the P-channel enhancement devices series. It features an integrated n-channel FET (npn-FET) prepared in high-performance MOS technology. The IRFR3706CTRRPBF is designed to minimize the resistance between source and drain, thus allowing more current to be passed through it.

The IRFR3706CTRRPBF is used in various application fields, such as power supplies, motor control, power management, and audio amplifiers. It is also used in the automotive industry. It can be used to drive high voltage motors, to control large inductive motor loads, and in DC/DC converters. Additionally, it can be used as a switch element in power circuits.

The IRFR3706CTRRPBF features an n-channel FET. It utilizes an optimized resistance between the source and drain, thereby reducing the power consumption required to drive the device. The small size of the device also reduces the board space required, making it an ideal choice for space constrained applications. It operates over a wide voltage range of 10V to 25V and can handle up to a maximum of 16.5A.

The working principle of the IRFR3706CTRRPBF is based on the principle of operation of a MOSFET device. MOSFETs are three-terminal semiconductor devices, with an electric insulating gate between the source and drain electrodes. The gate voltage applied to the MOSFET determines the drain-source channel conductivity. The applied voltage is typically implemented with a high impedance gate driver, allowing a low power drive level, while achieving a high switching frequency.

The IRFR3706CTRRPBF works by applying a voltage between the gate and source. When the gate voltage exceeds a certain voltage (the threshold voltage), it will allow electrons to flow through the source and drain electrodes, resulting in a source-drain current flow. The magnitude of the current flow is a function of the drain-source voltage and the threshold voltage. The IRFR3706CTRRPBF has an on-resistance of 60 m Ω, making it suitable for high current applications.

In conclusion, the IRFR3706CTRRPBF is a single N-channel MOSFET device manufactured by International Rectifier. It features an integrated n-channel FET, which is prepared in high-performance MOS technology. It is used in various application fields and can be used to drive high voltage motors, to control large inductive motor loads, and in DC/DC converters. The working principle of the IRFR3706CTRRPBF is based on the principle of operation of a MOSFET device. It works by applying a voltage between the gate and source, and the magnitude of the current flow is a function of the drain-source voltage and the threshold voltage.

The specific data is subject to PDF, and the above content is for reference