Allicdata Part #: | IRFR2905ZTRLPBF-ND |
Manufacturer Part#: |
IRFR2905ZTRLPBF |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Infineon Technologies |
Short Description: | MOSFET N-CH 55V 42A DPAK |
More Detail: | N-Channel 55V 42A (Tc) 110W (Tc) Surface Mount D-P... |
DataSheet: | IRFR2905ZTRLPBF Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
Series: | HEXFET® |
Packaging: | Tape & Reel (TR) |
Part Status: | Discontinued at Digi-Key |
FET Type: | N-Channel |
Technology: | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): | 55V |
Current - Continuous Drain (Id) @ 25°C: | 42A (Tc) |
Drive Voltage (Max Rds On, Min Rds On): | 10V |
Rds On (Max) @ Id, Vgs: | 14.5 mOhm @ 36A, 10V |
Vgs(th) (Max) @ Id: | 4V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs: | 44nC @ 10V |
Vgs (Max): | ±20V |
Input Capacitance (Ciss) (Max) @ Vds: | 1380pF @ 25V |
FET Feature: | -- |
Power Dissipation (Max): | 110W (Tc) |
Operating Temperature: | -55°C ~ 175°C (TJ) |
Mounting Type: | Surface Mount |
Supplier Device Package: | D-Pak |
Package / Case: | TO-252-3, DPak (2 Leads + Tab), SC-63 |
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IRF2905ZTRLPBF is a type of power MOSFET (metal oxide semiconductor field effect transistor). It consists of two complementary N-channel MOSFETs in a high-voltage, low power TO-220 package. This component is used in a variety of applications, ranging from power management to low-level sensing, due to its wide range of characteristics.
Applications of the IRF2905ZTRLPBF include relay drivers, motor controls, DC-to-DC converters, overcurrent protection, and avionics. Its suitability in these areas is due to the component’s high temperature operating range, low current drain and off-state leakage current, fast switching speeds, and low on-resistance rDS(on).
The power MOSFET’s working principle is based on the transistor action of a MOSFET. It consists of three terminals – gate, source, and drain. When a voltage is applied to the gate, electrons are allowed to flow from the source to the drain. This movement of electrons results in a current flow from the drain to the source, depending on the applied voltage. As the applied voltage increases, more electrons flow from the source to the drain, resulting in an increase in the current.
The IRF2905ZTRLPBF offers excellent switching and temperature performance, making it suitable for many applications. In addition, it features a low reverse transfer capacitance and low gate-to-source capacitance. The component also provides a low forward current threshold and a low maximum on-state resistance. With these characteristics, this MOSFET is suitable for low to high power applications and can operate at voltages up to 100V.
The IRF2905ZTRLPBF is an ideal component for power management, motor control, and amplifier applications. This component has an excellent power dissipation capability and can be used in high temperature applications. Its low on-state resistance allows for operation at high current levels, while its low reverse transfer capacitance ensures fast switching speeds. Furthermore, its low gate-to-source capacitance ensures low voltage drop across the component, making it ideal for low power applications.
In conclusion, the IRF2905ZTRLPBF is a versatile component with a wide range of applications. Its characteristics such as low on-state resistance, low reverse transfer capacitance, and low gate-to-source capacitance make it an excellent choice for a variety of applications, ranging from power management to low-level sensing. This MOSFET is an ideal component for power management, motor control, and amplifier applications.
The specific data is subject to PDF, and the above content is for reference
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